32Gbit/s 低耗能 850nm InAlGaAs 應變量子井面射型雷射

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翁瑋呈(Wei-Cheng Weng) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

32Gbit/s 低耗能 850nm InAlGaAs 應變量子井面射型雷射
(32Gbit/s Low-Power-Consumption 850nm Vertical-Cavity Surface-Emitting Lasers with Strained InAlGaAs-MQWs)

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★ 應用超寬頻光子傳送混波器達到遠距分佈及調變的20Gbit/s無誤碼無線振幅偏移調變資料傳輸於W-頻帶	★ 具有同時高速資料傳輸及產生直流電功率的砷化鎵/磷化銦鎵的雷射功率轉換器
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★ 超高速(~300GHz)光偵測器的製造與其在毫米波生物晶片上的應用	★ 超高速覆晶式(>300GHz)高功率(~mW)光偵測器製作與量測
★ 具有單空間模態,低發散角,高功率的鋅擴散二維850nm面射型雷射陣列	★ 應用於850到1550 nm波長光連結且具有高速,高效率和大面積的p-i-n光偵測器
★ 應用於中距離(2km)至短距離光連結知單模態、高速、高輸出光功率的850nm波段面射型雷射	★ 應用在光連接具有高可靠度高速(>25Gbit/sec) 850光波段的垂直共振腔雷射
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摘要(中)

我們已證明了具有鋅擴散之850奈米波段面射型雷射有很好的特性。在主動層上運用了具有應力InAlGaAs之多層量子井結構，而在同樣850奈米波段中與具有應力InGaAs多層量子井相較下，我們有較厚的主動層與較好的晶圓均勻性。我們的元件利用兩種不同擴散深度與相同水氧化孔徑(約6μm)，來分別優選靜態、動態與功率特性。擴散較深的元件具有較好的靜態特性。它具有很低的臨限電流(0.8mA)，高的微分量子效率(90%)，而且有著最大功率9.7mW並在所有偏流範圍內仍維持著近單一之中心波長模態輸出。另外具有較淺的鋅擴散元件(~0.6μm)，有著很好的動態特性，而且他顯示出有很大的調變電流效率(9.5GHz/mA1/2 ), 很高的資料量(32 Gbit/s error-free)，和一個很大資料量對應功率消耗之斜率(5.25Gbps/mW)，並有著非常低的峰對峰驅動電壓(Vp-p=0.25V)。這些靜態與動態之量測結果顯示出具有應力之InAlGaAs多層量子井與鋅擴散技術有著非常好的表現。

摘要(英)

We demonstrate a high-performance Zn-diffusion 850nm vertical-cavity surface-emitting laser (VCSEL). By use of the strained InAlGaAs multiple quantum wells (MQWs) as active region, our structure can have a much thicker well width and better wafer uniformity than those of strained InGaAs MQWs at the same 850nm wavelength. Two different Zn-diffusion depths were adopted in our devices with the same oxide current-confined aperture (~6μm) to optimize the static and dynamic power performance, respectively. The device with a deep Zn-diffusion depth (~1.2μm) is for the optimized static performance. It shows a low threshold current (0.8mA), a high differential quantum efficiency (90%), and can sustain the single fundamental-mode output with a maximum output power of 9.7mW under the full range of bias currents. On the other hand, device with a shallow Zn-diffusion depth (~0.6μm) is used for good dynamic performance and it exhibits a high modulation current efficiency (9.5 GHz/mA1/2), very high-data rate(32Gbit/sec error-free)performance,and very-high data-rate/power-dissipation ratio (5.25 Gbps/mW) with an extremely small peak-to-peak driving voltage (Vpp: 0.25V). These dynamic and static measurement results clearly indicate that the advantages of using InAlGaAs strained MQWs and Zn-diffusion techniques for 850nm VCSELs.

關鍵字(中)

★ 850nm面射型雷射

關鍵字(英)

★ 850nm vcsels
★ strained MQWs

論文目次

第一章序論 ....................................................................................................... 1
? 1-1 多媒體時代 ........................................................................................................ 1
? 1-2 光連結應用 ........................................................................................................ 1
? 1- 3 面射型雷射簡介 ................................................................................................ 6
? 1- 4 超高速、低耗能VCSEL 製作 .......................................................................... 8
? 1- 5 高可靠度製作 .................................................................................................. 14
第二章理論 ..................................................................................................... 16
? 2-1 VCSEL 的磊晶結構 .......................................................................................... 16
? 2-2 鋅擴散於DBR ................................................................................................. 20
? 2-3 VCSEL 的選擇性水氧化理論 .......................................................................... 22
? 2-4 發散角 .............................................................................................................. 24
第三章實驗 ..................................................................................................... 27
? 3-1 鋅擴散製程 ...................................................................................................... 27
? 3-2 水氣氧化 .......................................................................................................... 29
? 3-3 製作電極以及金屬回火(Annealing) ............................................................... 31
? 3-4 帄坦化及製作金屬接線依附在半絕緣層上 ................................................... 33
第四章量測結果與討論................................................................................... 36
? 4.1 量測系統 ............................................................................................................ 36
? 4.1.1. 電流對電壓(I-V)的量測系統 ............................................................... 36
? 4.1.2. 光功率對電流(L-I)之量測系統 ........................................................... 36
? 4.1.3. 遠場(Far field)之量測系統 .................................................................. 37
? 4.1.4. 近場(Near field)投影之量測系統 ........................................................ 37
? 4.1.5. 頻譜(Spectrum) 之量測系統 ............................................................... 38
? 4.1.6. 頻寬(Bandwidth)之量測系統 ............................................................... 38
? 4.1.7. 眼圖(Eye pattern)之量測系統 .............................................................. 39
? 4.2 單模態型VCSEL 量測結果 ............................................................................ 39
? 4.2.1. 電流對電壓（I-V）曲線 ..................................................................... 39
? 4.2.2. 輸出光功率對電流（L-I）曲線 .......................................................... 40
? 4.2.3. 近場（Near field）投影 ....................................................................... 41
? 4.2.4. 光頻譜(Optical spectra)圖 .................................................................... 42
? 4.2.5. 頻寬(Bandwidth) 和D 係數（D-factor） .......................................... 42
? 4.3 不同擴散深度VCSEL 分析 ............................................................................ 45
? 4.3.1. VCSEL 元件結構圖 .............................................................................. 45
? 4.3.2. 電流對電壓(I-V)曲線和光功率對電流(L-I)曲線…………………... 46
? 4.3.3. 近場（Near field）投影 ....................................................................... 47
? 4.3.4. 遠場(Far field)發散角(Divergence angle） ......................................... 48
? 4.3.5. 頻寬(Bandwidth) ................................................................................... 50
? 4.3.6. S11、S21 參數模擬 .............................................................................. 50
? 4.3.7. K 參數(K-parameter) ............................................................................. 55
? 4.3.8. 眼圖（eye pattern）量測 ..................................................................... 58
? 4.3.9. D 係數（D-factor） .............................................................................. 60
? 4.4 不同溫度VCSEL 分析 .................................................................................... 61
? 4.4.1. 高溫眼圖(eye pattern)量測與BER 分析 ............................................. 61
? 4.5 Benchmark ......................................................................................................... 62
第五章結論與未來研究................................................................................... 63
參考資料 ............................................................................................................. 64

參考文獻

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指導教授

許晉瑋(J.-W. Shi)

審核日期

2010-7-22

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