氮化鎵串接式綠光發光二極體在超高溫(200 ℃)操作的高速表現之和其內部之載子動力學

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姓名

黃鴻文(Hong-wen Huang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

氮化鎵串接式綠光發光二極體在超高溫(200 ℃)操作的高速表現之和其內部之載子動力學
(Very-High Temperature(200 ℃)and High-Speed Operation of Cascade GaN Based Green Light Emitting Diode and Investigation of the Internal Carrier Dynamic)

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摘要(中)

在本篇論文中，我們展示了新的串接式綠光發光二極體以應用於塑膠光纖車內通訊，並且具有極高的溫度忍受性(200 ℃)。串接三顆綠光發光二極體的元件能直接藉由汽車的驅動電壓12伏來操作，避免額外串聯電阻造成功率的浪費。藉由在N-contact層與主動區之間增加了一層氮化銦鎵緩衝層，此新的LED和無緩衝層的樣本相較之下有較小的turn on電壓(9.3伏 vs. 11伏在20 mA)、較大的飽和輸出功率(25.5毫瓦 vs. 22.5毫瓦在180 mA )、較寬的頻寬 (100 MHz vs. 40 MHz，在定電壓12伏下)，更佳的電流分佈效果，以及高溫下較低的功率退化 (約-0.1 %℃-1)。此元件操作在170mA下即可達到300Mbit/sec的資料傳輸，且在200 ℃下無明顯退化。
此外，為了研究LED的內部載子動力學，我們也開發了新穎的Electrical-Optical pump-probe方法。透過直接注入短脈衝電信號激發，此方法可以直觀地得到樣本的光響應波形，以分析其原始的載子動力學。以此方法分析我們的新元件，我們確認了所觀測到的高電流下效率衰退（efficiency droop）現象主要歸因於歐傑復合效應，且其內部響應時間與串接數無關。

摘要(英)

We demonstrate a novel type of linear cascade green light-emitting diode (LED) arrays as a light source for in-car or harsh environment plastic optical fiber (POF) communications. To further enhance its dynamic and static performance, an InGaN layer is inserted between an n-type GaN cladding layer and InGaN/GaN multiple quantum wells as an efficient current spreading layer. Compared with the control device without that layer, our three-LED cascade
array demonstrates a smaller turn-on voltage (9.3 vs. 11V at 20mA) and a larger output power (25.5mW vs. 22.5mW at 180mA), corresponding to anenhancement of around 31% in wall-plug efficiency. Furthermore, under a constant voltage bias of an in-car battery (12V), our three-LED array exhibits a superior E-O 3-dB bandwidth (100 vs.40MHz) performance to that of the control. Even under high-temperature dynamic operation, we observe that the InGaN insertion layer strongly enhances modulation-speed with negligible degradation of the output power, unlike red resonant-cavity LEDs conventionally used for POF. 200Mbit/sec error-free transmission is achieved at 200℃ which is the highest operation temperature among all the reported high-speed LEDs.
For the first time, internal carrier dynamic inside GaN-based green light-emitting-diodes (LEDs) during operation is directly observed by using demonstrated technique; electrical-optical pump-probe. By pumping short electrical pulses (~10ps) into high-speed cascade green LED, we can probe its output optical pulses by use of high-speed photo-receiver circuits. Based on such method, the recombination time constant of carriers can be measured directly without any assumption on recombination process. A high-speed cascade LED structure is adopted in our experiment to eliminate influence of RC-delay time on measured responses. Our measurement result indicates that both single and cascade three-LED structure have the same internal response time due to current continuity. Furthermore, according to measured responses under different temperatures (25℃ to 200℃), the origin of efficiency droop of GaN-based green LED under high bias current density may be attributed to strong non-radiative Auger effect instead of device heating or carrier over-flow.

關鍵字(中)

★ 綠光發光二極體
★ 串接式
★ 氮化鎵

關鍵字(英)

★ Cascade
★ Green light emitting diode
★ GaN

論文目次

摘要 i
Abstract ................................................................................................ ii
目錄 v
圖表目錄 ............................................................................................. vii
第一章導論 ......................................................................................... 1
§1-1 發光二極體之介……………………………………………………….. 1
§1-2 塑膠光纖發展趨勢與其應用………………………………………… 3
§1-3 高速綠光串接式發光二極體………………………………………...12
§1-4 具有InGaN 插入層的高速綠光串接式發光二極體……...……13
§1-5 高速串接式發光二極體之內部載子動力學………………….…. 14
§1-6 研究動機和論文架構 ……………………………………………….17
第二章串接式氮化鎵發光二極體之分析 .................................... 18
§2-1 氮化鎵發光二極體電流壅塞效應 ................................................... 18
§2-2 發光二極體調制速度之限制 .................................................... 21
§2-3 發光二極體對於車用所面臨問題 ............................................ 22
§2-4 串接式氮化鎵發光二極體 ........................................................ 23
第三章串接式氮化鎵發光二極體元件結構及製程 .................... 25
§3-1 串接式氮化鎵發光二極體元件結構 ......................................... 25
§3-2 串接式氮化鎵發光二極體製作結果與流程 ............................. 27
第四章串接式氮化鎵發光二極體量測結果與討論 ...................... 34
§4-1 串接式氮化鎵發光二極體之電特性量測 ................................. 34
§4-2 串接式氮化鎵發光二極體之光特性量測 ................................. 36
§4-3 串接式氮化鎵發光二極體調變速度之量測 ................................. 39
§4-4 串接式氮化鎵發光二極體之變溫特性量測...................................42
§4-5 串接式氮化鎵發光二極體之內部載量 .......................................... .48
第五章結論 ....................................................................................... 58
參考文獻…………………………………………………………… 59

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指導教授

許晉瑋(Jin-wei Shi)

審核日期

2010-7-28

推文