應用串接式技術達到超高飽和電流-頻寬乘積(7500mA-GHz,75mA,100GHz)的近彈道傳輸光偵測器

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周銘哲(Ming-Zhe Chou) 查詢紙本館藏

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電機工程學系

論文名稱

應用串接式技術達到超高飽和電流-頻寬乘積(7500mA-GHz,75mA,100GHz)的近彈道傳輸光偵測器
(Linear-Cascade Near-Ballistic Uni-Traveling-Carrier Photodiodes with a Breakthrough in the Performance of Saturation-Current-Bandwidth Product(7500mA-GHz,75mA,100GHz))

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摘要(中)

本論文運用串接式單載子傳輸光偵測器提升射頻光纖系統中接收端前級元件光二極體的飽和電流與頻寬乘積值，而這個乘積值往往成為判斷元件好壞程度的重要參數。經由理論得知飽和電流和頻寬受元件收光面積與空乏區厚度影響；薄的空乏區厚度造成電容上升，但會使得載子傳輸時間下降得到高輸出飽和電流，故必須降低主動區面積使得電容值下降，藉以得到高頻寬表現。因此本文內容將探討利用串接式結構提升飽和電流與頻寬乘積值，令元件能夠承受更高飽和電流(75mA)，且頻寬也可以維持在100GHz，在50歐姆負載下擁有創新紀錄的飽和電流與頻寬之乘積(7500mA-GHz, 75mA, 100GHz)。

摘要(英)

In this study, we demonstrate linear-cascade near-ballistic uni-traveling carrier photodiodes (LCPDs) with an optimized extremely high saturation current-bandwidth product performance (7500mA-GHz, 75mA, 100GHz,) which is the key parameter of photodiode with radio-of-fiber communication system. A thinner depletion layer thickness indicates a larger junction capacitance, a shorter carrier transit time, and a higher saturation current performance. The downscaling of device active area is thus necessary to sustain a low junction capacitance and achieve very-high speed performance. In this work we demonstrate linear cascade near-ballistic uni-traveling-carrier photodiodes. Compared with control (a single device), this novel structure exhibits significant improvement in bandwidth-efficiency and saturation-current-bandwidth products. Record-high saturation-current-bandwidth product (>7500mA-GHz, 100GHz) under 50? loads can be achieved.

關鍵字(中)

★ 串接式
★ 光檢測器

關鍵字(英)

★ cascade
★ photodetector

論文目次

摘要 ii
Abstract iii
致謝 iv
目錄 v
圖目錄 vii
表目錄 xi
第一章序論 1
§1.1光偵測器之發展與應用 1
§1.2串接式與傳統式光檢測器之比較 10
§1.3論文動機與架構 17
第二章彈道傳輸單載子光偵測器設計 18
§2.1傳統P-I-N光偵測器工作原理 18
§2.2單載子傳輸光偵測器工作原理 20
§2.3串接式近彈道傳輸單載子光偵測器之磊晶設計 24
§2.4串接式近彈道傳輸單載子光偵測器之結構設計 27
第三章串接式近彈道傳輸單載子光偵測器製作 30
§3.1串接式近彈道傳輸單載子光偵測器之製程 30
第四章量測與結果討論 45
§ 4.1 Heterodyne-Beating 量測系統之架設 45
§ 4.2 頻寬量測結果 47
§ 4.3 高功率產生量測結果 54
第五章結論與未來研究方向 56
參考文獻 58
圖目錄
圖1-1頻段與傳輸資料量對應曲線 1
圖1-2毫米波在大氣中的吸收頻譜圖 2
圖1-3 (a)毫米波源下被探測物實體圖像 (b)多頻毫米波影像分析圖 (C)單頻毫米波影像分析圖 3
圖1-4 各通訊協定的頻寬與涵蓋範圍對應圖 4
圖1-5 WiGig技術與多媒體裝置結合 5
圖1-6 (a) 光子接受器(amplified photo receiver)
(b) 光連結系統(fiber optic link) 6
圖1-7 光纖技結合無線傳輸之系統架構圖 7
圖1-8 以毫米波作無線傳輸即時轉播之系統架構圖 8
圖1-9 (a)波導式光偵測器之剖面結構圖 (b) 行波式光偵測器之剖面結構圖 (c) 行波式光測器商業化實體 11
圖1-10 行波式光偵測器等效電路 12
圖1-11 光波與微波在不同頻率之速度比較圖 13
圖1-12行波光偵測器的等效電路模型 13
圖1-13運用覆晶結合技術之高功率元件（a）異質結構場效電晶體（HFETs） (b)高電子移動率電晶體（HEMTs） (c)光二極體.....16
圖2-1 傳統P-I-N 光偵側器結構圖 18
圖2-2 單載子傳輸光偵測器與傳統P-I-N光偵測器空間電荷屏蔽效應 21
圖2-3 單載子傳輸光偵測器之實際操作與內部載子速度示意圖 22
圖2-4 彈道傳輸單載子光偵測器之能帶圖 25
圖2-5 電場在磊晶層之分佈 25
圖2-6 (a)載子於超厚無摻雜收集層之能帶圖 (b) 載子較薄無摻雜收集層之能帶圖 (c) 載子於串接式結構內部復合之能帶圖 28
圖3-1 陽極金屬（a）Mask 1(single) (b) 立體側視圖
(c) Mask 1(cascade) 32
圖3-2 主動區蝕刻後側視圖 33
圖3-3 陰極金屬(a) Mask 2(single)（b）立體側視圖 (c) Mask 2 (cascade) 34
圖3-4 定義元件區(a) Mask3 (single)（b）立體側視圖 (c) Mask 3 (cascade) 35
圖3-5 保護層(a) Mask4 (single)（b）立體示意圖 (c) Mask 4 (cascade) 36
圖3-6 平坦化製程(a) Mask4 (single)（b）立體示意圖 (c) Mask4 (cascade) 38
圖3-7 金屬墊製作（a）立體示意圖 (b) Mask 5 (single) (c) 完成品俯視圖 (d) Mask 5 (cascade) (e) 完成品俯視圖 39
圖3-8 元件背面蝕刻 (a) Mask 6（b）SEM圖之蛋狀蝕刻 (c) 立體示意圖 41
圖3-9 傳輸線基板 (a) Mask 7 (single)（b）立體示意圖 (c) Mask7 (cascade) (d) 立體示意圖 42
圖3-10 凸塊製作 (a) Mask 8 (single)（b）立體示意圖（c）Mask8 (cascade) (d) 立體示意圖 43
圖3-11 元件與傳輸線結合後之俯視圖 44
圖4-1 Heterodyne-Beat原理圖 45
圖4-2 Heterodyne-Beating system 量測架設示意圖 46
圖 4-3 Device A～C -3V之逆向偏壓下頻率響應之比較 47
圖4-4 串接式近彈道傳輸單載子光偵測器之二埠等效電路模型 48
圖4-5 -3V反向偏壓下的參數量測和模擬之微波頻率響應 50
圖4-6 Device C 在-10v偏壓狀況下，偶光損耗對頻率響應之變化 51
圖4-7 AC/DC比例與輸出訊號關係圖 52
圖4-8 光訊號開關速率 53
圖4-9 單顆與串聯個別操作在27GHz與91GHz情況量測到的光功率 54
圖5-1 Linear cascade PD與Qusai-Yagi Antenna 結合示意圖 57
圖5-2 將結合Linear cascade PD元件後的Qusai-Yagi Antenna與號角天線搭配式意圖 57
表目錄
表2-1 彈道傳輸單載子光偵測器之磊晶結構層 26
表3-1 HDP Recipe 33
表4-1 在等效電路中模擬過程所使用的元素之數值與物理意義 49
表4-2 比較Linear cascade PDs 與其他PDs飽和電流-頻寬乘積值 55

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指導教授

許晉瑋(Jin-wei Shi)

審核日期

2010-7-29

推文