博碩士論文 983204061 詳細資訊



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姓名 葉昭男(Chao-Nan Yeh)  查詢紙本館藏   畢業系所 化學工程與材料工程學系
論文名稱 鋁鍺雙層薄膜之擴散行為與金屬誘發結晶現象研究
(Elucidating the Metal-induced Crystallization and Diffusion Behavior of Al/a-Ge Bilayer Thin Film)
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摘要(中) 在MEMS元件重視內部腔體氣密性能力的同時，鋁鍺薄膜不失為一種良好的氣密性共晶接合材料，除了可在較低溫下進行接合的優點外，且金屬與半導體接合後形成緻密結構亦是重要因素，因此本研究主要探討Al-Ge薄膜在退火後薄膜表面形貌的觀察與Al-Ge擴散行為之動力學機制。本實驗選用磁控式濺鍍機(Magnetron Sputtering)為鍍膜設備，在壓力約10^-5 Torr下製備a-Ge(100 nm)/Al (100 nm)/Si substrate的雙層膜結構。將試片在真空下封入玻璃管中後分別放入200°C、300°C和400°C之高溫爐管中，退火時間從一天、五天、十天、十五天到二十天，另外製作室溫下的三種試片：剛鍍好的試片、放置十六天以及放置七十天之試片，用以比較室溫下不同時間對Al-Ge薄膜交互擴散之影響。試片分析儀器為掃描式電子顯微鏡(SEM)、能量散佈分析儀(EDS)、X射線光電子能譜儀(XPS)、低掠角X射線繞射儀(GIXRD)。
　　從XPS以及SEM觀察室溫下時間因素並不會影響薄膜之交互擴散行為；200°C下退火薄膜表面開始出現富鋁區析出物，表示Al-Ge之間進行交互擴散現象；300°C下退火十天薄膜發生層交換 (Layer exchange) 現象，依實驗觀察以及文獻理論探討Al-Ge薄膜層交換之動力學機制，並推測Al原子擴散至Ge表面的主要路徑為Ge的晶界。400°C下退火試片表面出現巨大突起物，應為薄膜升溫過程中承受來自基板壓應力，為釋放應力而向外擠出突起物。
摘要(英) Eutectic alunimun/amorphous-germanium (Al/a-Ge) bilayer thin film is characterized by its remarkable hermetic sealing in wafer-level bonding in microelectromechanical system (MEMS) devices. This study investigates metal-induced crystallization (MIC) of the amorphous Ge and the layer exchange of Al and Ge. The a-Ge(100 nm)/Al(100 nm) bilayer thin films were deposited by sputtering technique and separately sealed in glass tubes in a vacuum of 10^-3 Torr. The samples were analyzed mainly by scanning electron microscopy (SEM), energy dispersive Spectrometer (EDS) analysis, and x-ray photoelectron spectroscopy (XPS). From the results we found that the diffusion behavior was impervious to the time evolution at room temperature. a-Ge began induced crystallization by Al when annealing at 200°C. Layer exchange of Al and Ge occurred at 300°C of annealing for 10 days. A kinetic mechanism is developed to explain the layer exchange phenomenon of Al and Ge system. Extrusions were found on the surfaces of the samples annealed at 400°C due to stress relaxation.
關鍵字(中) ★ 氣密性封裝
★ 微機電封裝
★ 層交換
★ 金屬誘發結晶
★ 共晶接合		 關鍵字(英) ★ MEMS packaging
★ layer exchange
★ hermetic sealing
★ metal-induced-crystallization
★ eutectic bonding
論文目次 中文摘要.................................I
英文摘要. ..............................II
誌謝.......................................III
目錄.......................................IV
圖目錄...................................VI
表目錄...................................IX
第一章　序論..........................................................................................................1
1.1　微機電封裝 (MEMS packaging) 簡介.........................................................1
1.2　MEMS封裝技術簡介....................................................................................3
1.3　氣密性封裝 (Hermetic sealing).....................................................................6
第二章　文獻回顧..................................................................................................8
2.1　鋁鍺共晶系統.................................................................................................8
2.2　鋁鍺共晶薄膜在MEMS封裝的發展...........................................................9
2.2.1　鍵結測試與氣密測試..................................................................................9
2.2.2　壓力對Al-Ge薄膜共晶接合能力之影響................................................11
2.2.3　Al-Ge薄膜共晶接合製程改良.................................................................13
2.2.4　Al-Ge薄膜共晶接合微結構觀察.............................................................14
2.3　金屬誘發結晶 (Metal-induced Crystallization, MIC) 現象.......................16
2.4　MIC現象形成機制.......................................................................................21
2.5　層交換 (Layer exchange) 現象...................................................................27
2.6　Al-Ge薄膜之表面形貌................................................................................29
2.7　研究動機.......................................................................................................31
第三章　實驗方法................................................................................................32
3.1　濺鍍系統簡介...............................................................................................32
3.2　基材準備與薄膜沉積製程...........................................................................32
3.3　製備真空環境與退火條件...........................................................................33
3.4　鋁鍺薄膜試片分析方法...............................................................................34
3.4.1　掃描式電子顯微鏡 (Scanning Electron Microscopy, SEM)...................34
3.4.2　能量散佈分析儀 (Energy Dispersive Spectrometer, EDS)......................35
3.4.3　X射線光電子能譜儀 (X-Ray Photoelectron Spectroscopy, XPS).........35
3.4.4　低掠角X射線繞射儀 (Grazing Incident X-Ray Diffraction, GIXRD)..36
3.4.5　電子微探儀 (Electron Probe Micro-Analyzer, EPMA)............................36
第四章　結果與討論............................................................................................38
4.1　鋁鍺雙層薄膜擴散現象之觀察...................................................................38
4.2　鋁鍺雙層薄膜之縱深分佈分析圖...............................................................41
4.3　鋁鍺雙層薄膜之擴散行為與層交換動力學機制探討...............................45
4.4　鋁鍺雙層薄膜表面突起物的生成現象與形成原因...................................58
第五章　結論........................................................................................................60
參考文獻................................................................................................................62
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指導教授 吳子嘉(Albert T. Wu) 審核日期 2011-8-16
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