奈米尺度鎳金屬點陣與矽碳單晶基材之界面反應研究及規則有序矽單晶奈米結構陣列之製備

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曾昱中(Yu-chung Tseng) 查詢紙本館藏

畢業系所

化學工程與材料工程學系

論文名稱

奈米尺度鎳金屬點陣與矽碳單晶基材之界面反應研究及規則有序矽單晶奈米結構陣列之製備
(Interfacial Reactions of Periodic Ni Nanodot Arrays on Epitaxual Si:C Layers and The Fabrication of Single Crystalline Silicon Nanostructure Arrays.)

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摘要(中)

本研究中分別利用自然滴製法與LB-like法在矽碳及矽晶基材上製備出大面積排列規則的PS球陣列結構作為模板(Template)。
　在蒸鍍Ni金屬與移除PS球模板後，可製備出大面積規則排列且尺寸均一之鎳金屬奈米點陣列。鎳金屬點退火至350 ℃時，低電阻相NiSi相已完全形成於(001)Si0.976:C0.024基材上。而當鎳金屬點退火至500 ℃時，鎳矽化物奈米點仍主要為低電阻之NiSi相，需提高退火溫度至600 ℃才會完全轉換成高電阻NiSi2相。此結果證實碳的摻雜可增加低電阻NiSi點陣之熱穩定性。而當鎳金屬奈米點陣之退火熱處理溫度升高至900 ℃時，則會發現大量奈米線結構的產生，此奈米線結構主要是由矽、氧成分所組成之非晶質SiOX奈米線，其大小約為14-20 nm，並推測其生長為固-液-固(Solid-Liquid-Solid, SLS)之成長機制。
　在製備大面積規則排列矽單晶奈米環結構之研究方面，本研究也首度結合奈米球模板與多重選擇性化學濕式蝕刻技術，成功在矽晶基材上製備出環高與環寬可控制之規則有序矽單晶奈米環狀結構陣列。

摘要(英)

The present study has demonstrated that well-ordered arrays of polystyrene(PS) nanosphere were successfully fabricated on (001)Si and (001)Si0.976C0.024 substrates by using the LB-like and/or drop-coating technique. The self-assembled PS nanosphere arrays were used as the deposition templates.
　After Ni thin film deposition and subsequent removal of the PS nanosphere templates, periodic Ni nanodot arrays were formed. For the samples annealed at 350℃, low-resistivity NiSi nanodots were observed to form on the (001)Si0.976C0.024 substrate. Furthermore, even after annealing at 500℃, the low-resistivity NiSi phase wewe still detected in the Ni nanodots/Si:C sample. As the annealing temperature was increased to 600℃, the nanodots grown on (001)Si0.976C0.024 substrates were then transformed to high- resistivity NiSi2 phase completely. The observed results revealed that the phase stability of NiSi nanodots was significantly improved by the addition of C to Si substrate. For the Ni nanodot samples further annealed at 900 ℃, many SiOx nanowires of 14-20 nm in diameter were observed to grow from the NiSi2 nanodot regions. The growth process of amorphous SiOx nanowires could be explained by the solid–liquid–solid (SLS) mechanism.
　By combining the nanosphere template and selective chemical etching, large-area size and height-tunable Si nanoring-like nanostructure arrays were successfully fabricated on (001)Si substrates.

關鍵字(中)

★ 矽碳基材
★ 奈米環
★ 鎳矽化物
★ 奈米點陣

關鍵字(英)

★ Si:C substrate
★ Silicide
★ Nanodot
★ Nanoring

論文目次

中文摘要.................................................i
英文摘要................................................ii
誌謝...................................................iii
圖目錄.................................................vii
表目錄.................................................xii
第一章簡介..............................................1
1-1 前言.................................................1
1-2 金屬矽化物...........................................2
1-2-1 金屬矽化物的應用及製程.............................3
1-2-2 鎳、鈷與鈦金屬矽化物...............................4
1-3 矽碳元件.............................................5
1-3-1 矽碳元件應用原理...................................6
1-3-2 矽碳元件中之金屬接觸矽化反應.......................6
1-4 微影製程技術.........................................7
1-4-1 掃描探針式微影術...................................7
1-4-2 X-ray微影術.......................................8
1-4-3 電子束微影術.......................................8
1-5 微奈米球微影術.......................................9
1-5-1 自組裝簡介.........................................9
1-5-2 微奈米球微影術的發展..............................10
1-5-3 奈米球自組裝技術..................................10
1-5-3-1 自然滴製法(Drop Coating)......................11
1-5-3-2 旋轉塗佈法(Spin Coating)......................11
1-5-3-3 電場促進自組裝技術(Electrophoretic Deposition, EPD)....................................................12
1-5-4 微奈米球微影術製備奈米結構........................13
1-5-4-1 金屬薄膜沉積製程技術..........................14
1-6 矽基蝕刻技術........................................15
1-6-1 濕式蝕刻..........................................15
1-6-1-1 矽晶基材蝕刻技術..............................15
1-6-2 乾式蝕刻..........................................16
1-6-3 利用蝕刻技術製備多樣性奈米結構....................16
1-7 研究動機與目標......................................17
第二章實驗步驟.........................................20
2-1 微奈米球模版之製備..................................20
2-1-1 基材前處理........................................20
2-1-2 奈米球膠體溶液配製................................21
2-1-3 自組裝製備奈米球陣列..............................22
2-2 大面積鎳金屬矽化物奈米點陣列之製備..................22
2-2-1 金屬薄膜蒸鍍......................................23
2-2-2 奈米球舉離........................................23
2-2-3 退火熱處理........................................23
2-3 大面積有序矽單晶奈米環陣列結構之製備................24
2-3-1 反應性離子蝕刻控制奈米球模板球徑大小..............24
2-3-2 金屬薄膜沈積與奈米球舉離..........................24
2-3-3 退火熱處理........................................25
2-3-4 選擇性化學濕式蝕刻................................25
2-4 使用儀器及特性分析..................................25
2-4-1 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)25
2-4-2 原子力顯微鏡(Atomic Force Microscopy, AFM)........25
2-4-3 穿透式電子顯微鏡(Transmission Electron Microscopy, TEM)
與X光能量散佈光譜儀(EDS)................................26
第三章結果與討論.......................................27
3-1單層奈米球陣列模板製備......................................................27
3-1-1 自然滴製法........................................27
3-1-2 LB-like法.........................................28
3-2 大面積鎳金屬薄膜及奈米尺度鎳金屬點陣與矽碳單晶基材之界面反應研究................................................29
3-2-1 鎳金屬薄膜與(001)Si及(001)Si0.976C0.024基材之界面反應29
3-2-2 在(001)Si:C基材上生成奈米尺度鎳矽化物點陣之形貌觀察31
3-2-3 鎳金屬奈米點陣與(001)Si0.976C0.024基材之界面反應..32
3-3 (001)Si基材上製備大面積矽單晶奈米環結構陣列.........36
3-3-1 點狀及環狀矽單晶奈米結構陣列之形貌及尺寸控制與觀察37
第四章結論.............................................42
參考文獻................................................45

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指導教授

鄭紹良(Shao-Liang Cheng)

審核日期

2011-8-29

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