利用電子迴旋共振化學氣相沉積法沉積氫化非晶矽薄膜探討其應力與結晶行為

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：16

、訪客IP：3.149.23.218

姓名

王榆茜(Yu-cian Wang) 查詢紙本館藏

畢業系所

材料科學與工程研究所

論文名稱

利用電子迴旋共振化學氣相沉積法沉積氫化非晶矽薄膜探討其應力與結晶行為
(Stress and crystallization of hydrogenated amorphous silicon films grown by electron cyclotron resonance chemical vapor deposition)

相關論文

★ 開發鎵奈米粒子沉浸於可拉伸聚合物之可調式電漿子結構	★ 利用等效差分時域(FDTD)模擬分析自組裝鎵奈米顆粒嵌入可拉伸彈性材料光學性質探討
★ 無鉛銲料錫銀銦與銅基板的界面反應	★ 高度反射性銀/鑭雙層p型氮化鎵歐姆接觸之性質研究
★ 以電子迴旋共振化學氣相沉積氫化非晶矽薄膜之熱處理結晶化研究	★ 研究奈晶矽與非晶矽之多層結構經熱退火處理後之性質及其在PIN太陽能電池吸收層中之應用
★ 利用陽極氧化鋁模板製備銀奈米結構陣列於玻璃基板	★ 高反射低電阻銀鑭合金P型氮化鎵歐姆接觸之研究
★ 陽極氧化鋁模板製備銀奈米粒子陣列及其表面增強拉曼散射效應之應用	★ 製備磷摻雜奈米矽晶氧化矽薄膜及其於太陽能電池之應用
★ 陽極氧化鋁模板製備銀奈米粒子陣列及其光學性質	★ 以電流控制方式快速製備孔洞間距400至500奈米之陽極氧化鋁模板
★ 利用濕式氧化法製備氧化矽薄膜應用於矽晶太陽能電池表面鈍化技術之研究	★ 磷摻雜矽奈米晶粒嵌入於氮化矽基材之材料成長與特性分析
★ 利用電子迴旋共振化學氣相沉積法製備多層SiOxNy:H/SiCxNy:H抗反射薄膜及其於矽基太陽能電池之應用	★ 利用新穎方法製作鋁背表面電場應用於結晶矽太陽能電池

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

[檢視]

[下載]

本電子論文使用權限為同意立即開放。
已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。
請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。

摘要(中)

以高頻之ECRCVD成長氫化非晶矽薄膜，具有低溫成膜性質及沉積速率較快等優勢，將有效降低製作元件成本。然而，氫化非晶矽薄膜為矽氫所組成，其結構相對於結晶矽鬆散，且矽氫鍵結斷裂形成缺陷，易發生光衰退效應，為提高薄膜穩定度使得元件壽命增加，故各國研究目標為將薄膜由非晶結構轉至微晶或多晶結構，調整SiH4與H2流量比例，直接成長微晶矽結構薄膜；或是經由熱處理使氫化非晶矽薄膜結晶化，得到多晶矽薄膜，以提升薄膜太陽能電池之效率與穩定度。
本研究利用ECRCVD成長不同SiH4流量之薄膜，為要得到不同R* 薄膜，以了解其微結構對於薄膜在退火前後應力與結晶行為之影響。利用OM、FTIR、Raman、XRD與NMR分別利用Stoney Equation進行應力計算、Si-H與Si-H2之鍵結型為與氫含量計算、薄膜結晶率與中短程有序結構、結晶尺寸與結晶方向與氫分布之行為探討。在ECRCVD成長氫化非晶矽薄膜時，隨著流量上升，薄膜R*下降而氫含量上升，薄膜之壓縮應力與R*並非成比例之變化。因此我們提出一假設，認為具有氫鈍化的孔洞表面微薄膜中應力集中處，隨著R*上升，薄膜壓縮應力提高，然而當氫已無法全部鈍化孔洞表面時，這種被部分鈍化的孔洞反而成為應力釋放處，因此薄膜的壓縮應力下降。另一方面，在R*愈大的薄膜結晶速率愈慢，是因其薄膜內部氫分布較為鬆散且空孔密度大有機會使其孕核時的障壁能提高。

摘要(英)

Due to its high mobility and high stability under light soaking, polycrystalline silicon (Poly-Si) is a promising material candidate for thin film solar cells and transistors. Solid phase crystallization (SPC) of hydrogenated amorphous silicon (a-Si:H) is a simple and attractive method to fabricate poly-Si at a low temperature. However, the evolution of stress and hydrogen effusion of a-Si:H films during SPC have not been well-understood.
In this study, the relationship between the stress and crystallization behavior of the annealed films were investigated. a-Si:H thin films with various microstructure parameter (R*) values were prepared using electron cyclotron resonance chemical vapor deposition (ECRCVD) by adjusting the feed gas ratio. The crystallization of the a-Si:H films were then carried out by the thermal annealing process at a temperature range from 200 °C to 800 °C under nitrogen ambient. The microstructure properties of the films were evaluated using Raman spectroscope, scanning electron microscope and Infrared spectroscope. From our experimental results, the as-grown sample with R* = 0.54 may have largest compressive stress. After annealing above 300 °C, the film stress is changed to tensile stress due to hydrogen effusion, and reaches a maximum around 400 °C. Different mechanisms of stress formation and relaxation, such as bond reconstruction and microstructure evolution during crystallization at higher temperatures were also discussed.

關鍵字(中)

★ 電子迴旋共振化學氣相沉積法
★ 氫化非晶矽
★ R*
★ 薄膜應力
★ 氫含量
★ 部分鈍化孔洞

關鍵字(英)

★ a-Si:H
★ ECRCVD
★ R*
★ stress
★ hydrogen content
★ crystallization

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 v
圖目錄 viii
表目錄 1
第一章前言 2
第二章文獻回顧與理論背景 4
2.1 元件發展情況 4
2.1.1 薄膜太陽能電池發展概況 4
2.1.2 薄膜電晶體發展 5
2.2 氫化非晶矽薄膜之特性 7
2.2.1 氫化非晶矽薄膜之製備 7
2.2.2 氫化非晶矽薄膜之結構 8
2.2.3 氫化非晶矽薄膜之矽氫鍵結 10
2.2.4 氫化非晶矽薄膜光學性質 12
2.2.5 氫化非晶矽薄膜沉積條件與應力之關係 14
2.3 氫化非晶矽薄膜結晶化之方法 15
2.3.1 準分子雷射退火法(ELA) 16
2.3.2快速熱退火法(RTA) 17
2.3.3 高溫管型爐退火法(FA) 18
2.3 結晶行為之成核與成長動力學之理論 19
2.3.1 成核與成長之動力學參數 19
2.3.2 孕核時間 21
2.3.3 成核速率與成長速率 22
2.4 微結構在退火過程與結晶行為之變化 23
2.4.1退火溫度與時間的影響 23
2.4.2 氫含量與分佈的影響 25
2.4.3 缺陷與空孔分佈 28
2.4.4 薄膜應力分析 29
2.4.5 矽-矽四面體鍵角之變化 30
第三章實驗步驟 32
3.1 製備氫化非晶矽薄膜 32
3.2 沉積氫化非晶矽薄膜的鍍率 32
3.3 熱處理氫化非晶矽薄膜 33
3.4 熱處理前後薄膜特性分析 34
3.4.1傅立葉轉換紅外線光譜 (Fourier Transform Infrared Spectrometry) 34
3.4.2 拉曼光譜儀 (Raman Spectroscopy) 34
3.4.3 光學顯微鏡 (Optical Microscope) 35
3.4.4 核磁共振頻譜 (Nuclear Magnetic Resonance Spectroscopy, NMR) 35
3.4.5 X光繞射儀 (X-ray diffraction, XRD) 35
第四章結果與討論 37
4.1 不同成長條件的氫化非晶矽薄膜性質 37
4.2氫化非晶矽薄膜退火過程性質變化 39
4.2.1 退火過程前後氫化非晶矽薄膜應力 40
4.2.2退火過程中內部結構之變化 42
4.3 氫化非晶矽薄膜之結晶化行為 46
4.3.1 溫度效應與熱力學行為之探討 46
4.3.2 薄膜內部氫分佈對結晶行為之影響 51
第五章結論 53
參考文獻 54

參考文獻

[1] J. J. Loferski, J. Appl. Phys. 27, 777 (1956).
[2] M. A. GreenPhysica E 14, 65 (2002)
[3] Martin Helgesen, Roar Søndergaard and Frederik C. Krebs, J. Mater. Chem. 20, 36 (2010)
[4] M. A. Green, Prog. Photovoltaics 9, 123 (2001).
[5] H. F. Sterling and R. G. C. Swann, Solid-State Electron. 8, 653 (1965).
[6] R. C. Chittick, J. H. Alexander, and H. F. Sterling, J. Electrochem. Soc. 116, 77 (1969).
[7] A. Triska, D. Denison, and H. Fritzsche, Bull. Am. Phys. Soc. 20, 392 (1975).
[8] K. Susuzi, in Amorphous and Microcystalline Semiconductor Devices: Optoelectronic Devices, edited by J. Kanicki (Artech House, Boston, 1991).
[9] M. J. Powell, IEEE Trans. Electron Devices 36, 2753 (1989)
[10] N. D. Young, R. M. Brunn, R. W. Wilks, D. J. McCulloch, S. C. Deane, M. J. Edwards, G. Harkin and A. D. Pearson, J. Soc. Inf. Disp. 5/3, 275 (1997)
[11] C. van Berkel and M. J. Powell, Appl. Phys. Lett. 51, 1094 (1987)
[12] M. J. Powell, C. van Berkel, A. R. Franklin, S. C. Deane, and W. I. Milne, Phys. Rev. B 45, 4160 (1992)
[13] J. P. Kleider and F. Dayoub, Phys. Rev. B 58, 10401 (1998)
[14] M. J. Powell, C. van Berkel, and J. R. Hughes, Appl. Phys. Lett. 54, 1323 (1989)
[15] Y. Kaneko, A. Sasano, T. Tsukuda, R. Oritsuki, and K. Suzuki, Extended Abstracts of the 18th Conference on Solid State Device Materials, p. 699 (1996)
[16] I. D. French, S. C. Deane, D. T. Murley, J. Hewett, I. G. Gale, and M. J. Powell, Mater. Res. Soc. Symp. Proc. 467, 875 (1997)
[17] H. Meiling and R. E. I. Schropp, Appl. Phys. Lett. 70, 2681 (1997)
[18] S. W. Lee and S. K. Joo, IEEE Electron Device Letters, 17(4), 160 (1996)
[19] K. Shimizu, O. Sugiura, and M. Matsumura, IEEE Transactions on Electron Devices 40, 112 (1993)
[20] R. A. Street, Hydrogenated amorphous silicon, pp.18-20 (1991)
[21] L. Houben, M. Luysberg, P. Hapke, R. Carius, F. Finger, and H. Wagner, Philos. Mag. A 77, 1447 (1998).
[22] A. H. Mahan, Y. Xu, D. L. Williamson, W. Beyer, J. D. Perkins, M. Vanecek, L. M. Gedvilas, and B. P. Nelson, J. Appl. Phys. 90, 5038 (2001).
[23] M. Pontoh, V. L. Dalal, N. Ganghi, Mat. Res. Soc. Symp. Proc. A19.6.1 715 (2002).
[24] R. Biswas, Qiming Li, B. C. Pan, and Y. Yoon, Phys.l Rev. B, 57, 2253 (1998)
[25] M. H. Brodsky, Manuel Cardona, and J. J. Cuomo, Phys. Rev. B, 16, 3556 (1977)
[26] U. Kroll, J. Meier, A. Shah, S. Mikhailov, and J. Weber, J. Appl. Phys. 80, 4971 (1996)
[27] Norbert H. Nickel: Hydrogen in semiconductor II, 61 (1999)
[28] Enakshi Bhattacharya and A. H. Mahan, Appl. Phys. Lett. 52(19), 1587 (1988)
[29] S. Guha and J. Yang, Scott J. Jones, Yan Chen, and D. L. Williamson, Appl. Phys. Lett. 61(41), 1444 (1992)
[30] A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, Phys. Rev. B, 45(23), 13367, (1992)
[31] L. Houben, M. Luysberg, P. Hapke, R. Carius, F. Finger and H. Wagner, Philosophical Magazine A, 77 (6), 1447 (1998)
[32] C. Smit, R. A. C. M. M. van Swaaij, H. Donker, A. M. H. N. Petit, W. M. M. Kessels, and M. C. M. van de Sanden, J. Appl. Phys. 94, 3582 (2003).
[33] T. Kaneko, K. Onisawa, M. Wakagi, Y. Kita, T. Minemura, Jpn. J. Appl. Phys. 32, 4097 (1993)
[34] R. C. Teixeira, I. Doi, M. B. P. Zakia, J. A. Diniz, J. W. Swart, Mater. Sci. Eng. B 112, 160 (2004)
[35] K. Laaziri, S. Kycia, S. Roorda, M. Chicoine, J. L. Robertson, J. Wang, and S. C. Moss, Phys. Rev. Lett. 82, 3460 (1999)
[36] K. Laaziri, S. Kycia, S. Roorda, M. Chicoine, J. L. Robertson, J. Wang, and S. C. Moss, Phys. Rev. B 60, 13520 (1999)
[37] J. Fortner and J. S. Lannin, Phys. Rev. B 39, 5527 (1989)
[38] R. Tsu, J. Gonzalez-Hernandez, and F. H. Pollack, J. Non-Cryst. Solids 66,109 (1984)
[39] D. Beeman, R. Tsu, and M. F. Thorpe, Phys. Rev. B 32, 874 (1985)
[40] F. Kail, J. Farjas, P. Roura, C. Secouard, O. Nos, J. Bertomeu, F. Alzina, and P. Roca i Cabarrocas, Appl. Phys. Lett. 97, 031918 (2010)
[41] R. B. Wehrspohn, S. C. Deane, I. D. French, I. Gale, J. Hewett, M. J. Powell, and J. Robertson, J. Appl. Phys 87(1), 144 (2000)
[42] H. Windischmann, J. Appl. Phys. 62, 1800 (1987)
[43] J. Dutta, U. Kroll, P. Chabloz, A. Shah, A. A. Howling, J.-L. Dorier, and C. Hollenstein, J. Appl. Phys. 72, 3220 (1992)
[44] D. L. Smith, Thin Film Deposition (McGraw-Hill, New York), (1995), Chap. 5.6
[45] D. L. Staebler and C. R. Wronski, Appl. Phys. Lett. 31, 292 (1997).
[46] M. A. Green, P. A. Basore, N. Chang, D. Clugston, R. Egan, R. Evans, D. Hogg, S. Jarnason, M. Keevers, P. Lasswell, J. O’Sullivan, U. Schubert, A. Turner, S. R. Wenham, and T. Young, Sol. Energy 77, 857 (2004).
[47] J. F. Michaud, R. Rogel, T. Mohammed-Brahim, M. Sarret, and O. Bonnaud, Thin Solid Filmsm 487, 81 (2005).
[48] H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuwahara, S. Ishida, T. Nohda, K. Sano, H. Iwata, H. Kawata, M. Osumi, S. Tsuda, S. Nakano, and Y. Kuwano, Jpn. J. Appl. Phys. 30, 3700 (1991).
[49]P. Lengsfeld, N. H. Nickel, and W. Fuhs, Appl. Phys. Lett. 76, 1680 (2000).
[50] C. W. Lee, C. C Lee, and Y. T. Kim, Appl. Phys. A 56, 123 (1993)
[51] S. Honda, A. Fejfar, J. Kočka, A. Ogane, Y. Uraoka and T. Fuyuki, J. Non-Cryst. Solids 352, 955 (2006).
[52] R. B. Iverson and R. Reif, J. Appl. Phys. 62, 1675 (1987)
[53] John Robertson, J. Appl. Phys. 93 ,731 (2003)
[54] Y. Masaki, P. G. LeComber, and A. G. Fitzgerald, J. Appl. Phys. 74, 129 (1993).
[55] D. Kashchiev, Surf. Sci.14, 209 (1969)
[56] K. F. Kelton, A. L. Greer, and C.V. Thompson, J. Chem. Phys. 79, 6261 (1983)
[57] C. Song, G. R. Chen, J. Xu, T. Wang, H.C. Sun, Y. Liu, W. Li, Z.Y. Ma, L. Xu, X.F. Huang and K.J. Chen, J. Appl. Phys. 105, 054901 (2009).
[58] Y. Wu, J. T. Stephen, D. X. Han, and J. M. Rutland, R. S. Crandall and A. H. Mahan, Phys. Rev. lett. 77, 2049 (1996)
[59] D. L. Young, Paul Stradins, Yueqin Xu, Lynn Gedvilas, Bob Reedy, A. H. Mahan, Howard M. Branz, Qi Wang, and D. L. Williamson, Appl. Phys. Lett. 89, 161910 (2006)
[60] A. H. Mahan, B. Roy, R. C. Reedy, Jr., D. W. Readey, and D. S. Ginley, J. Appl. Phys. 99, 023507 (2006)
[61] David L. Young, Paul Stradins, Yueqin Xu, Lynn M. Gedvilas, Eugene Iwaniczko, Yanfa Yan, Howard M. Branz, Qi Wang, and Don L. Williamson, Appl. Phys. Lett. 90, 081923 (2007)
[62] Hideo Miura, Hiroyuki Ohta, and Noriaki Okamoto, and Toru Kaga, Appl. Phys. Lett. 60, 2746 (1992)
[63] P. Roura, J. Farjas, and P. Roca i Cabarrocas, J. Appl. Phys. 104, 073521 (2008)
[64] P. Roura, J. Farjas, C. Rath, J. Serra-Miralles, E. Bertran, and P. Roca i Cabarrocas, Phys. Rev. B 73, 085203 (2006)
[65] J. Farjas, D. Das, J. Fort, P. Roura, and E. Bertran, Phys. Rev. B 65,115403 (2002)
[66] K. Zellama, L. Chahed, P. Sladek, M. L. Theye, J. H. von Bardeleben, and P. Roca i Cabarrocas, Phys. Rev. B 53, 3804 (1996)
[67] N. H. Nickel and W. B. Jackson, Phys. Rev. B 51, 4872 (1995)
[68] Y. Yamyoto, H. Nomura, T. Tanaka, M. Hiramatsu, M. Hori and T. Goto, Jpn. J. Appl. Phys. 33, 4320 (1994)
[69] M. Zhang, Y. Nakayama, S. Nonoyama and K. Wakita, Journal of
Non-Crystalline Solids 164-166 63-66 (1993)
[70] P. Flinn, D. Gardner, and W. Nix, “Measurement and Interpretation of Stress in Aluminum-Based Metallization as a Function of Thermal History,” IEEE Trans. Electron Devices, 34(3), pp. 689–699 (1987)
[71], L. B. Freund, and S. Suresh,”Thin Film Materials: Stress, Defect Formation and Surface Evolution”, Cambridge University, Cambridge, UK. (2004)
[72] K. Zellama, L. Chahed, P. Sládek, M. L. Thèye, J. H. von Bardeleben and P. Roca i Cabarrocas, Phys. Rev. B. 53 (1996) 3804.
[73] D. Beeman, R Tsu, and M. F. Thorpe, Phys. Rev. B 32, 874 (1985)
[74] W. A. Johnson and R. F. Mehl, Trans. Am. Inst. Min. Metall. Pet. Eng. 135, 415 (1939)
[75] M. Avrami, J. Chem. Phys. 7, 1103 (1939)
[76] M. Avrami, J. Chem. Phys. 8, 212 (1940)
[77] M. Avrami, J. Chem. Phys. 9, 177 (1941)
[78] Bernard Dennis Cullity, Stuart R. Stock, Elements of X-ray Diffraction , Prentice Hall (2001)
[79] A. H. Mahan, T. Su, D. L. Williamson, L. M. Gedvilas, S. P. Ahrenkiel, P. A. Parilla, Y.Xu, and D. A. Ginley, Adv. Funct. Mater., 19, 1 (2009)

指導教授

陳一塵(I-chen Chen)

審核日期

2011-8-23

推文