非(微)晶矽薄膜太陽能電池之能隙結構研究

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姓名

陳柏丞(Bo-Cheng Chen) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

非(微)晶矽薄膜太陽能電池之能隙結構研究
(Research on the bandgap engineering of micromorph silicon thin-film solar cells)

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摘要(中)

本論文研究重點為了拓展矽薄膜太陽能電池對太陽光頻譜的吸收，因此在單一p-i-n的結構下，於本質層中堆疊非晶矽與不同結晶率的微晶矽，利用模擬軟體AMPS-1D有系統地探討不同的堆疊對太陽光吸收的響應。
研究結果顯示：一、在只有單一本質層的矽薄膜太陽能電池中，本質層的材料會影響最佳效率的是厚度；當使用結晶率越高的微晶矽薄膜，其需要更大的厚度才可以達到最佳的效率；二、本質層以雙層堆疊時，若要有效的增加太陽的光萃取，非晶矽與微晶矽其材料厚度與排列方式對於頻譜響應有很大的影響；三、在固定厚度下，雙層結構中以”微晶矽–非晶矽”的堆疊結構對於光吸收有較好的表現，而這樣的結構中也擁有較高的短路電流 (Jsc) 與填充因子 (FF)。當結構為微晶矽–非晶矽的排列，厚度各為單位厚度的4倍，則效率最高可以達到11.1%。

摘要(英)

The thesis aims on the improvement of the efficiency of the silicon thin-film solar cell by better extraction of solar spectrum. We have analyzed the influence of the spectral response using AMPS-1D simulator by stacking amorphous silicon and microcrystalline silicon with different crystalline volume fraction of the intrinsic layer in p-i-n structure.
The thesis reveals the following results: first, the optimized thickness of the intrinsic layer is related to the crystalline volume fraction of the microcrystalline silicon. The thickness of an i-layer with a higher crystalline volume fraction must be thicker to obtain higher efficiency. Second, when the intrinsic layer was constructed by two layers, an amorphous layer and a microcrystalline layer, the spectral response of the device is influenced by both layer thickness and arrangement. Third, for a fixed thickness, the layer structure of the "microcrystalline silicon – amorphous silicon" is better for extraction of solar spectrum. The structure also features the highest Jsc and FF with 90% crystalline volume fraction of the microcrystalline silicon and amorphous silicon stack. The conversion efficiency can reach 11.1% .

關鍵字(中)

★ 薄膜太陽能電池
★ 能隙結構
★ AMPS-1D

關鍵字(英)

★ bandgap engineering
★ silicon thin-film solar cells
★ AMPS-1D

論文目次

摘要 I
ABSTRACT II
誌謝 III
目錄 IV
圖目錄 VII
表目錄 X
第一章緒論 1
1.1前言 1
1.2研究背景 5
1.2.1 非晶矽薄膜 (a-Si) 5
1.2.2 微晶矽薄膜 (μc-Si) 7
1.3文獻回顧 9
1.4研究動機 10
1.5 論文架構 11
第二章基本理論 12
2.1 太陽能電池基本原理 12
2.1.1 p-n 接面 12
2.1.2太陽能電池原理 14
2.1.3 p-i-n 結構 17
2.2 非晶矽狀態密度模型 18
2.2.1 Mott-Davis模型 19
2.2.2 計算非晶矽與微晶矽的光學能隙 21
2.2.3 能態密度模型 (Density of State) 23
2.3 等效介質理論 25
第三章模擬方法與參數設定 27
3.1 模擬工具簡介 27
3.2 物理模型與原理 28
3.2.1帕松方程式 (Poisson’s equation) 28
3.2.2 電流連續方程式 28
3.2.3 能隙中的電子與電洞密度 29
3.3 材料參數 30
3.4元件結構參數 33
第四章非(微)晶矽薄膜模型 35
4.1 主動層吸收系數參數設定 35
4.1.1 非晶矽模型吸收係數計算 35
4.1.2 單晶矽與非晶矽參數選擇 36
4.1.3 吸收係數計算 39
4.2 主動層電性參數設定 41
第五章非(微)晶矽薄膜太陽能電池 45
5.1 模擬元件參數表 45
5.2單一本質層之光電特性分析 48
5.3本質層以雙層堆疊之光電特性分析 50
5.3.1 雙層結構不同單位厚度比例 51
5.4 固定厚度之最佳能隙結構分析 59
第六章結論 64
參考文獻 65

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指導教授

陳昇暉、李正中
(Sheng-Hui Chen、Cheng-Chung Lee)

審核日期

2011-8-4

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