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姓名 宋炳儒(Bing-ru Song) 查詢紙本館藏 畢業系所 機械工程學系 論文名稱 紫外光輔助準晶矽薄膜在多孔層上之製作與研究
(The study of the quasi-crystal silicon thin film with UV assisted in the porous silicon layer.)相關論文 檔案 [Endnote RIS 格式]
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摘要(中) 隨著時代的發展，半導體製程技術依循著摩耳定律（Moore，s Law）發展，目前進入奈米製程，開始28奈米和22奈米節點之量產。絕緣層矽晶（Silicon on insulator, SOI）材料結構具備可以解決於傳統矽塊材（Bulk Silicon）晶圓材料上製作尺寸越來越小之元件所帶來的諸多問題，如：寄生效應、閉鎖效應、軟錯效應、基材漏電流與過熱等問題。Smart-CutR製程為近來最常用之技術，利用高劑量氫離子佈植於矽晶圓內，再經晶圓鍵合製程與高溫退火處理，使氫離子聚集產生剝離以達到薄膜轉移之目的。但離子佈植機設備高昂，且高強度離子束易損傷晶圓，佈植深度難以超過一微米，故改以利用紫外光輔助電化學蝕刻的方式製作出厚層的薄膜轉移材料。
本實驗研究之目的為使用紫外光輔助電化學蝕刻的方式，依照不同蝕刻參數，蝕刻P型重掺雜矽晶圓，蝕刻出雙層多孔矽結構，再利用Argon高溫退火處理，製作出具深埋破裂層與微米厚的多孔回復晶矽薄膜，其薄膜為準晶矽結構。
摘要(英) The semiconductor manufacturing technology follows the Moor’s law in the past. The development of the semiconductor industry has entered the nanoscale process, such as the 28 nm and the 22 nm. Silicon on insulator, SOI, which has the material structure can solve the problem of the devices been manufactured to be smaller with the traditional bulk silicon wafer, such as the parasitic capacitance, the latch-up, short channel effects, the substrate leakage current and overheating, and so on. Smart-CutR process is a common technology for manufacturing the SOI material. By implanting the high doses of hydrogen ion into the silicon wafer, wafer bonding process and annealing process, the hydrogen ions will accumulate and thus create cracks to finish thin film transfer. The ions implantation equipment is easy to cause damage because of high ion implanting doses into silicon wafer, and which is expensive. It’s difficult to obtain over 1 micron of implanting depth. Thus, the UV-assisted electrochemical etching method can achieve thicker film transfer and the price is cheaper.
The purpose of this study is to use the UV-assisted electrochemical etching method, heavily doped P-type silicon wafer was electrochemically etched based on different etching parameters which forms a porous silicon (PS) bilayer. Then the PS wafer was annealed at the high temperature to manufacture the PS bilayer with a buried separation and recrystallization layer with a few micros thickness, which was the structure of the quasi-crystalline silicon.
關鍵字(中) ★ 多孔矽
★ 準晶系
★ 薄膜
★ 紫外光關鍵字(英) ★ UV
★ thin film
★ porous silicon
★ quasi-crystalline論文目次 摘要………………………………………………………………………i
Abstract………………………………………………………………..…ii
致謝……………………………………………………………...………iii
目錄……………………………………………………………………iv
圖目錄……………………………………………………………..…….vi
表目錄……………………………………………………………….…xiii
第一章 緒論……………………………………………………………..1
1.1 研究背景…………………….……………………………….…1
1.2 研究目的…………………….………………………………….5
第二章 原理與文獻回顧………………………………………………10
2.1 形成多孔矽之基礎理論……….……………………………...10
2.2 多孔矽製作技術…………………..……………………….......11
2.2.1 多孔矽電化學蝕刻中的電流－電壓（I-V）特性…….13
2.2.2 多孔矽溶解的化學反應…………………………...…14
2.2.3 光照輔助多孔矽蝕刻………………………………...16
2.2.4 孔矽形成機制…………………………..…………...17
2.2.4.1 貝爾模型（The Beale Model）………………17
2.2.4.2 量子模型（The Quantum Model）………..………18
2.2.4.3 擴散限制模型（The Diffusion-Limited Model）.18
2.2.5 多孔矽的橫向蝕刻…………..………….……………19
2.2.6 多孔矽的高溫退火.…………………….……………20
第三章 實驗準備與步驟…..…………………..……………..…..……28
3.1 實驗試片與器材準備…..………………………...………...…29
3.2 實驗晶片清潔…..…….…………….....………………………30
3.3 電化學蝕刻設備…..…………………..........…………………32
3.4 高溫退火設備…..…………………..……...………….………34
3.5 分析儀器介紹…………………..…..……………..…………..36
3.5.1 場發射掃描式電子顯微鏡（FE-SEM）..……………36
3.5.2 場發射穿透式電子顯微鏡（FE-TEM）..……..………37
第四章 結果與討論…..……..……..……..……..…………..……..…43
4.1 不同蝕刻時間參數電化學蝕刻雙層多孔矽結果與討論…....44
4.2 雙重不同定電流參數電化學蝕刻雙層多孔矽結果與討論…46
4.3 雙層多孔矽高溫退火結構變化結果與討論……….….…..…49
第五章 結論與未來展望…..……..……..……..……..………..…..…83
5.1 結論…..……..……..……..……..……………..……..……..…83
5.2 未來展望…..……..……..……..……..……….……...……..…84
參考文獻..……..……....……..……....……..……....……..………..…..85
圖目錄
圖 1.1 漏電流示意圖……………………………………………….….6
圖 1.2 寄生電容示意圖………………………………………….…….6
圖 1.3 閉鎖效應示意圖…………………………………………….….6
圖 1.4 軟錯效應示意圖………………………………………….…….7
圖 1.5 絕緣層矽晶（SOI）基本結構圖……………………………….7
圖 1.6 SIMOX 製程簡圖…………………………………………...….7
圖 1.7 BESOI 製程簡圖……………………………………………….8
圖 1.8 Smart-CutR 製程簡圖…………………………….…………….9
圖 1.9 ELTRANR 製程簡圖………………………………..………….9
圖 2.1 典型(a)P型矽與(b)N型矽之電壓-電流曲線圖………….……21
圖 2.2 陽極電位曲線圖………………………………………………21
圖 2.3 Lehmann所提出之多孔矽化學反應示意圖…………………22
圖 2.4 紫外光輔助蝕刻表面和側面SEM圖 【(A) 20 min, (B) 40 min, (C) 60 min】…………………………………………………………23
圖 2.5 貝爾模型………………………………………………………23
圖 2.6 擴散限制模型…………………………………………………24
圖 2.7 橫向蝕刻的裂縫生長示意圖…………………………………24
圖 2.8 多孔矽高溫退火孔隙回復過程示意圖………………………25
圖 3.1 實驗流程圖……………………………………………………39
圖 3.2 實驗用試片……………………………………………………40
圖 3.3 電化學蝕刻之反應蝕刻槽系統………………………………41
圖 3.4 蝕刻槽結構圖…………………………………………………41
圖 3.5 高溫退火設備…………………………………………………42
圖 3.6 JSM-7401F分析儀器…………………………………………42
圖 3.7 JEM-2100F分析儀器………………………….………………42
圖 4.1 雙層多孔矽（300/600 mA）（5/5 min）之SEM側視圖…………51
圖 4.2 雙層多孔矽（300/600 mA）（7.5/7.5 min）之SEM側視圖….…51
圖 4.3 雙層多孔矽（300/600 mA）（10/10 min）之SEM側視圖…...…52
圖 4.4 雙層多孔矽（300/600 mA）（15/15 min）之SEM側視圖…...…52
圖 4.5 雙層多孔矽（300/600 mA）（5/5 min）之SEM上層側視圖...…53
圖 4.6 雙層多孔矽（300/600 mA）（7.5/7.5 min）之SEM上層側視圖…………………………………………………………………...53
圖 4.7 雙層多孔矽（300/600 mA）（10/10 min）之SEM上層側視圖…………………………………………………………………...54
圖 4.8 雙層多孔矽（300/600 mA）（15/15 min）之SEM上層側視圖………………………………………………………………...…54
圖 4.9 雙層多孔矽（300/600 mA）（5/5 min）之SEM下層側視圖……………………………………………………………...……55
圖 4.10 雙層多孔矽（300/600 mA）（7.5/7.5 min）之SEM下層側視圖……………………………………………………………...……55
圖 4.11 雙層多孔矽（300/600 mA）（10/10 min）之SEM下層側視圖……………………………………………………………...……56
圖 4.12 雙層多孔矽（300/600 mA）（15/15 min）之SEM下層側視圖…………………………………………………………………...56
圖 4.13 雙層多孔矽（250/600 mA）之SEM側視圖……….……..……57
圖 4.14 雙層多孔矽（250/650 mA）之SEM側視圖……….…..………57
圖 4.15 雙層多孔矽（250/675 mA）之SEM側視圖……………...……58
圖 4.16 雙層多孔矽（250/600 mA）之SEM上層側視圖………...……58
圖 4.17 雙層多孔矽（250/650 mA）之SEM上層側視圖…….…..……59
圖 4.18 雙層多孔矽（250/675 mA）之SEM上層側視圖……….…..…59
圖 4.19 雙層多孔矽（250/600 mA）之SEM下層側視圖………...……60
圖 4.20 雙層多孔矽（250/650 mA）之SEM下層側視圖……...………60
圖 4.21 雙層多孔矽（250/675 mA）之SEM下層側視圖………...……61
圖 4.22 雙層多孔矽（300/600 mA）之SEM側視圖…………...………61
圖 4.23 雙層多孔矽（300/650 mA）之SEM側視圖…………...………62
圖 4.24 雙層多孔矽（300/675 mA）之SEM側視圖…………...………62
圖 4.25 雙層多孔矽（300/600 mA）之SEM上層側視圖………...……63
圖 4.26 雙層多孔矽（300/650 mA）之SEM上層側視圖…………...…63
圖 4.27 雙層多孔矽（300/675 mA）之SEM上層側視圖…...…………64
圖 4.28 雙層多孔矽（300/600 mA）之SEM下層側視圖…………...…64
圖 4.29 雙層多孔矽（300/650 mA）之SEM下層側視圖……...………65
圖 4.30 雙層多孔矽（300/675 mA）之SEM下層側視圖…………...…65
圖 4.31 雙層多孔矽（250/600 mA）退火1.5 hr之SEM側視圖…….…66
圖 4.32 雙層多孔矽（250/600 mA）退火1.5 hr之SEM側視圖….……66
圖 4.33 雙層多孔矽（250/600 mA）退火1.5 hr之SEM側視圖（上層）……………………………………………………………….…67
圖 4.34 雙層多孔矽（250/600 mA）退火1.5 hr之SEM側視圖（下層）………………………………………………….………………67
圖 4.35 雙層多孔矽（300/600 mA）退火1.5 hr之SEM側視圖（上層）………………………………………………….………………68
圖 4.36 雙層多孔矽（300/600 mA）退火1.5 hr之SEM側視圖（下層）………………………………………………….………………68
圖 4.37 雙層多孔矽（250/600 mA）退火3 hr之SEM側視圖…………69
圖 4.38 雙層多孔矽（300/600 mA）退火3 hr之SEM側視圖…………69
圖 4.39 雙層多孔矽（250/600 mA）退火3 hr之SEM側視圖（上層）…………………………………………………….……………70
圖 4.40 雙層多孔矽（250/600 mA）退火3 hr之SEM側視圖（下層）…………………………………………………….……………70
圖 4.41 雙層多孔矽（300/600 mA）退火3 hr之SEM側視圖（上層）…………………………………………………….……………71
圖 4.42 雙層多孔矽（300/600 mA）退火3 hr之SEM側視圖（下層）…………………………………………………….……………71
圖 4.43 雙層多孔矽（250/600 mA）退火1.5 hr之TEM側視圖（宏觀）…………………………………………………….……………72
圖 4.44 雙層多孔矽（250/600 mA）退火1.5 hr之TEM側視圖（表面）…………………………………………………….……………72
圖 4.45 雙層多孔矽（250/600 mA）退火3 hr之TEM側視圖（宏觀）…………………………………………………….……………73
圖 4.46 雙層多孔矽（250/600 mA）退火3 hr之TEM側視圖（表面）…………………………………………………….……………73
圖 4.47 雙層多孔矽（300/600 mA）退火1.5 hr之TEM側視圖（宏觀）…………………………………………………….……………74
圖 4.48 雙層多孔矽（300/600 mA）退火1.5 hr之TEM側視圖（表面）…………………………………………………….……………74
圖 4.49 雙層多孔矽（300/600 mA）退火3 hr之TEM側視圖（宏觀）…………………………………………………….……………75
圖 4.50 雙層多孔矽（300/600 mA）退火3 hr之TEM側視圖（表面）…………………………………………………….……………75
圖 4.51 雙層多孔矽（250/600 mA）退火1.5 hr之TEM側視圖（內層）…………………………………………………….……………76
圖 4.52 雙層多孔矽（250/600）退火3 hr之TEM側視圖（內層）…………………………………………………….……………76
圖 4.53 雙層多孔矽（300/600 mA）退火1.5 hr之TEM側視圖（內層）…………………………………………………….……………77
圖 4.54 雙層多孔矽（300/600 mA）退火3 hr之TEM側視圖（內層）（A）………………….……………………………….……………77
圖 4.55 雙層多孔矽（300/600 mA）退火3 hr之TEM側視圖（內層）（B）………………………………………………….………..……78
圖 4.56 雙層多孔矽（300/600 mA）退火3 hr之TEM側視圖（內層）（C）………………………………………………….………...…78
圖 4.57 雙層多孔矽（250/600 mA）退火1.5 hr之晶格繞射圖……..…79
圖 4.58 雙層多孔矽（250/600 mA）退火3 hr之晶格繞射圖………….79
圖 4.59 雙層多孔矽（300/600 mA）退火1.5 hr之晶格繞射圖……..…80
圖 4.60 雙層多孔矽（300/600 mA）退火3 hr之晶格繞射圖（表面）….80
圖 4.61 雙層多孔矽（300/600 mA）退火3 hr之晶格繞射圖（內層）.…81
圖 4.62 雙層多孔矽（300mA/700mA）Ar高溫退火之X光繞射圖…81
表目錄
表 2.1 蝕刻技術之比較…………………………………...………….26
表 2.2 p型及n型單晶矽在氫氟酸電解液中的電化學特性……...…26
表 2.3 陽極反應參數與多孔矽形成之關係…………………………27
表 4.1 實驗蝕刻時間參數表…………………………………………82
表 4.2 實驗蝕刻定電流參數表………………………………………82
表 4.3 實驗退火時間參數表…………………………………………82
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指導教授 李天錫(Tien-hsi Lee) 審核日期 2012-7-6 推文 plurk
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