摘要(英) |
In this study, first of all, we discuss how different silicon wafer affect the results of surface passivation and solar cell; then we use the quinhydrone(QHY)
as the surface passivation material. The advantages of QHY are rapid, convenient, easy and good passivation effect in chemical immersion. Finally, we apply surface passivation of QHY on silicon solar cells to enhance the open-circuit voltage, fill factor and conversion efficiency.
We measure the effective lifetime value of 30 pieces of silicon wafers, and select respectively the good, normal and bad, three kinds of silicon wafers to process solar cells, whose conversion efficiency are 10.9%, 9.3% and 7.4%, respectively, under the same procedure. Next, we measure effective lifetime of normal silicon wafers on QSSPCD mode with different QHY concentrations and immersion time. We get the best lifetime value, which is 788 µs, and its SRV is 13 cm/s, on the best condition of 0.01 mol/L with immersion time for 60 miuntes. Then, we analyze its surface bonding by the spectrums of C1s, O1s,
and Si2p of XPS, and verify that these QHY-passivation silicon wafers exist the binding signals of Si-O, C-C and C-O on its surface and under the surface for 2 to 4 nm, and this confirms the fact that the process of QHY passivation would improve the surface defects of silicon wafers.
The surface defects of silicon thin film are improved in the way of QHY surface passivation; in addition, its effective lifetime is promoted; then, we process it into a silicon solar cell after we coat the ITO and electrode on it. Finally, measured by AM1.5 light source, the open circuit voltage of QHY-surface-passivation silicon thin film is increased from 553.5 mV to 570.7 mV, its FF is increased from 61.5% to 69.62%, and its conversion efficiency is increased from 11.71% to 12.47%.
|
參考文獻 |
[1] 黃惠良,曾百亨等著,“太陽電池 Solar Cell,”五南出版社(2008)
[2] Swanson, R. M. , “A vision for crystalline silicon photovoltaics,” Progress in Photovoltaics 14 , 443-453(2006)
[3] Parida, B.Iniyan, S. Goic, R. , “A review of solar photovoltaic technologies,” Renewable & Sustainable Energy Reviews 15 , 1625-1636 (2011)
[4] Toru Sawada, Norihiro Terada, Sadaji Tsuge, Toshiaki Baba, Tsuyoshi Takahama, Shinya Tsuda and Shoichi Nakano, “High-efficiency a-Si/c-Si heterojunction solar cell,”IEEE Photovoltaic Specialists Conference (1994)
[5] Hitoshi Sakata and Makoto Tanaka, “Sanyo’s Challenges to the Development of High-efficiency HIT Solar Cells and the Expansion of HIT Business,” IEEE 4th World Conference (2006)
[6] Jens D. Moschner, Jan Schmidt, and Rudolf Hezel,“Surface recombination velocity measurements at the silicon–silicon dioxide interface by microwavedetected photoconductance decay,” J. Appl. Phys. 76, 363 (1994)
[7] A.W Stephens, A. G. Aberle, and M. A. Green,”Thermo-catalytic deposition of silicon nitride - a new method for excellent silicon surface passivation,” Photovoltaic Specialists Conference(2002)
[8] Nicholas Ewen Grant and Keith R. McIntosh, “Low Surface Recombination Velocity on (100) Silicon by Electrochemically Grown Silicon Dioxide Annealed at Low Temperature,” IEEE ELECTRON DEVICE LETTERS 31,(2010)
[9] R.E.I. Schropp , C.H.M. van der Werf, V. Verlaan, J.K. Rath, H. Li, “Ultrafast deposition of silicon nitride and semiconductor silicon thin films by Hot Wire Chemical Vapor Deposition,” Thin Solid Films 517,3039(2008)
[10] Yasufumi Tsunomura, Yukihiro Yoshimine, Mikio Taguchi, Toshiaki Baba, Toshihiro Kinoshita,Hiroshi Kanno, Hitoshi Sakata, Eiji Maruyama, Makoto Tanaka, “Twenty-two percent efficiency HIT solar cell,” Solar Energy Materials & Solar Cells 93, 670–673 (2009)
[11] Bhumika Chhabra, Sefik Suzer, Robert L. Opila, Christiana B. Honsberg, “Electrical and chemical characterization of chemically passivated silicon surfaces,” PVSC,(2008) 33rd IEEE
[12] Bhumika Chhabra, Christiana B. Honsberg, Robert L. Opila , “High open circuit voltages on ≪ 50 micron silicon substrates by amorphous-silicon (a-Si) and quinhydrone-methanol (QHY-ME) passivation, ” PVSC, (2009) 34th IEEE
[13] Bhumika Chhabra, Stuart Bowden, Robert L. Opila, and Christiana B. Honsberg, “ High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation,” APPLIED PHYSICS LETTERS 96, 063502 (2010)
[14] Bhumika Chhabra, Conan Weiland, Robert L. Opila, and Christiana B. Honsberg, “Surface characterization of quinhydrone–methanol and iodine–methanol passivated silicon substrates using X-ray photoelectron spectroscopy,” Phys. Status Solidi A 208, 86–90 (2011)
[15] H. Schlangenotto, H. Maeder, W. Gerlach, “Temperature dependence of the radiative recombination coefficient in silicon, ” physica status solidi (a) 21, 357-367 (1974)
[16] Dziewior, J.; Schmid, W. ,“Auger coefficients for highly doped and highly excited silicon,” Applied Physics Letters 31, 346 (1977)
[17] Kerr, Mark J.; Cuevas, Andres ,“General parameterization of Auger recombination in crystalline silicon,” Journal of Applied Physics 91, 2473-2480 (2002)
[18] W. Shockley and W. T. Read, Jr. ,“Statistics of the Recombinations of Holes and Electrons,” Phys. Rev. 87, 835–842 (1952)
[19] R. N. Hall,“Electron-Hole Recombination in Germanium,” Phys. Rev. 87, 387–387 (1952)
[20] I. Martín, a M. Vetter, M. Garín, A. Orpella, C. Voz, J. Puigdollers, and R. Alcubilla, “Crystalline silicon surface passivation with amorphous SiCx:H films deposited by plasma-enhanced chemical-vapor deposition,” J. Appl. Phys. 98, 114912 (2005)
[21] Stefan Dauwe, “Low-temperature Surface Passivation of Crystalline Silicon and Its Application to the Rear Side of Solar Cells(2004)
[22] Ronald A. Sinton, Andres Cuevas, “Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data,” Appl. Phys. Lett. 69 ,2510-2512 (1996)
[23] Henning Nagel, Christopher Berge, “Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors,” J. Appl. Phys. 86, 6218-6221 (1999)
[24] G. E. Jellison, Jr. and F. A. Modine, “Parameterization of the optical functions of amorphous materials in the interband region,” Appl. Phys. Lett. 69, 371 (1996)
|