參考文獻 |
[1] T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "High-power AlGaN/GaN HEMTs for Ka-band applications," IEEE Electron Device Letters, vol. 26, pp. 781-783, 2005.
[2] O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures," Journal of Applied Physics, vol. 87, p. 334, 2000.
[3] M. A. Khan, X. Hu, G. Sumin, A. Lunev, J. Yang, R. Gaska, and M. S. Shur, "AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor," IEEE Electron Device Letters, vol. 21, pp. 63-65, 2000.
[4] X. Hu, A. Koudymov, G. Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, and R. Gaska, "Si3N4/AlGaN/GaN metal insulator semiconductor heterostructure field–effect transistors," Applied Physics Letters, vol. 79, p. 2832, 2001.
[5] P. D. Yet, B. Yang, K. K. Ng, J. Bude, G. D. Wilk, A. S. Halder, and J. C. M. Hwang, "GaN MOS-HEMT using atomic layer deposition Al2O3/ as gate dielectric and surface passivation," pp. 167-172, 2004.
[6] Y. Yue, Y. Hao, Q. Feng, J. Zhang, X. Ma, and J. Ni, "Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition," Science in China Series E: Technological Sciences, vol. 52, pp. 2762-2766, 2008.
[7] L. Zhi Hong, N. Geok Ing, S. Arulkumaran, M. Ye, T. Khoon Leng, F. Siew Chuen, V. Sahmuganathan, X. Tao, and L. Chee How, "High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Al2O3 Gate Insulator Grown by ALD," IEEE Electron Device Letters, vol. 31, pp. 96-98, 2010.
[8] S. Yagi, M. Shimizu, M. Inada, H. Okumura, H. Ohashi, Y. Yano, and N. Akutsu, "Off-state drain current and breakdown voltage of AlGaN/GaN MIS-HEMT with multilayered gate insulator," physica status solidi (c), vol. 4, pp. 2682-2685, 2007.
[9] S. Yagi, M. Shimizu, H. Okumura, H. Ohashi, K. Arai, Y. Yano, and N. Akutsu, "1.8 kV AlGaN/GaN HEMTs with High-k/Oxide/SiN MIS Structure," pp. 261-264, 2007.
[10] B. Lu, O. I. Saadat, and T. Palacios, "High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor," IEEE Electron Device Letters, vol. 31, pp. 990-992, 2010.
[11] B. Zhiwei, H. Yue, L. Hongxia, L. Linjie, and F. Qian, "Characteristics analysis of gate dielectrics in AlGaN/GaN MIS-HEMT," pp. 419-422, 2009.
[12] D. Zhuang and J. H. Edgar, "Wet etching of GaN, AlN, and SiC: a review," Materials Science and Engineering: R: Reports, vol. 48, pp. 1-46, 2005.
[13] T. Wu, Z.-B. Hao, G. Tang, and Y. Luo, "Dry Etching Characteristics of AlGaN/GaN Heterostructures Using Inductively Coupled H2/Cl2, Ar/Cl2 and BCl¬3/Cl2 Plasmas," Japanese Journal of Applied Physics, vol. 42, pp. L257-L259, 2003.
[14] L. Ji-Myon, C. Ki-Myung, P. Seong-Ju, and J. Hong-Kyu, "Inductively Coupled Cl2/Ar/O2 Plasma Etching of GaN, InGaN, and AlGaN," Journal of the Korean Physical Society, vol. 37, p. 842, 2000.
[15] Y. Han, S. Xue, W. Guo, Y. Luo, Z. Hao, and C. Sun, "Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas," Japanese Journal of Applied Physics, vol. 42, pp. L1139-L1141, 2003.
[16] M. A. Khan, Q. Chen, C. J. Sun, J. W. Yang, M. Blasingame, M. S. Shur, and H. Park, "Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors," Applied Physics Letters, vol. 68, p. 514, 1996.
[17] W. B. Lanford, T. Tanaka, Y. Otoki, and I. Adesida, "Recessed-gate enhancement-mode GaN HEMT with high threshold voltage," Electronics Letters, vol. 41, p. 449, 2005.
[18] K. Ota, K. Endo, Y. Okamoto, Y. Ando, H. Miyamoto, and H. Shimawaki, "A normally-off GaN FET with high threshold voltage uniformity using a novel piezo neutralization technique," pp. 1-4, 2009.
[19] Dong-Seok Kim, "High performance in Normally-off Al2O3/GaN MOSFET Based on an AlGaN/GaN Heterostructure with a p-GaN buffer layer," Journal of the Korean Physical Society, vol. 58, p. 1500 ~ 1504, 2011.
[20] L. Yuan, H. Chen, and K. J. Chen, "Normally Off AlGaN/GaN Metal&2DEG Tunnel-Junction Field-Effect Transistors," IEEE Electron Device Letters, vol. 32, pp. 303-305, 2011.
[21] Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen, "Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode," IEEE Transactions on Electron Devices, vol. 53, pp. 2207-2215, 2006.
[22] N. Tsuyukuchi, K. Nagamatsu, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, "Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact," Japanese Journal of Applied Physics, vol. 45, pp. L319-L321, 2006.
[23] Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka, and D. Ueda, "Gate Injection Transistor (GIT)& A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation," IEEE Transactions on Electron Devices, vol. 54, pp. 3393-3399, 2007.
[24] M. Kanamura, T. Ohki, T. Kikkawa, K. Imanishi, T. Imada, A. Yamada, and N. Hara, "Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High-k Gate Dielectrics," IEEE Electron Device Letters, vol. 31, pp. 189-191, 2010.
[25] C. T. Chang, T. H. Hsu, E. Y. Chang, Y. C. Chen, H. D. Trinh, and K. J. Chen, "Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage," Electronics Letters, vol. 46, p. 1280, 2010.
[26] R. Aggarwal, A. Agrawal, M. Gupta, and R. S. Gupta, "Analytical performance evaluation of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor and its comparison with conventional HFETs for high power microwave applications," Microwave and Optical Technology Letters, vol. 50, pp. 331-338, 2008.
[27] M. Esposto, S. Krishnamoorthy, D. N. Nath, S. Bajaj, T.-H. Hung, and S. Rajan, "Electrical properties of atomic layer deposited aluminum oxide on gallium nitride," Applied Physics Letters, vol. 99, p. 133503, 2011.
[28] N. Nepal, N. Y. Garces, D. J. Meyer, J. K. Hite, M. A. Mastro, and J. C. R. Eddy, "Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-kDielectrics," Applied Physics Express, vol. 4, p. 055802, 2011.
[29] Y. C. Chang, W. H. Chang, H. C. Chiu, L. T. Tung, C. H. Lee, K. H. Shiu, M. Hong, J. Kwo, J. M. Hong, and C. C. Tsai, "Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric," Applied Physics Letters, vol. 93, p. 053504, 2008.
[30] Y. Hori, C. Mizue, and T. Hashizume, "Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition," Japanese Journal of Applied Physics, vol. 49, p. 080201, 2010.
[31] D. Gregušová, R. Stoklas, C. Mizue, Y. Hori, J. Novák, T. Hashizume, and P. Kordoš, "Trap states in AlGaN/GaN metal oxide semiconductor structures with Al2O3 prepared by atomic layer deposition," Journal of Applied Physics, vol. 107, p. 106104, 2010.
[32] S. Arulkumaran, T. Egawa, and H. Ishikawa, "Studies on the Influences ofi-GaN,n-GaN,p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors," Japanese Journal of Applied Physics, vol. 44, pp. 2953-2960, 2005.
[33] H. Yang, Y. Son, S. Choi, and H. Hwang, "Improved Conductance Method for Determining Interface Trap Density of Metal Oxide Semiconductor Device with High Series Resistance," Japanese Journal of Applied Physics, vol. 44, pp. L1460-L1462, 2005.
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