探討硫化鎘緩衝層之離子擴散處理對CIGS薄膜元件效率影響

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姓名

林峻平(Chun-ping Lin) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

探討硫化鎘緩衝層之離子擴散處理對CIGS薄膜元件效率影響
(Effects of ion-soaking treatment with CdS buffer layer on CIGS thin film solar cell)

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摘要(中)

在近代的研究中，有文獻提到以化學水浴法沉積CdS薄膜在CIGS上會有鎘離子擴散進CIGS薄膜的現象，更有文獻證實了這種現象會使CIGS表面的特性由p-type轉換成n-type (n-CIGS:Cd)，因此會在CIGS薄膜表面的內部形成pn-junction，而這樣的好處是空乏區內的缺陷少，以及增加CIGS薄膜內部更深位置的電子電洞對收集量。所以有很多研究為了增加n-CIGS:Cd的厚度，於是先將CIGS薄膜浸泡在含鎘離子的溶液中，使鎘離子自然的擴散到CIGS薄膜表面，然後再沉積CdS薄膜，不過沒有文獻明確的指出如何判別鎘離子對CIGS薄膜的擴散程度為何時，對CIGS薄膜為最好的有效參雜結果。
本實驗利用XPS與PL的量測，分析出在不同的鎘離子擴散參數下，為達到最好的有效參雜所需後退火200℃的時間。除此之外，我們在量測分析的結果中發現到實驗中硫離子對CIGS薄膜的擴散也會造成好的影響，並且分析出對CIGS薄膜有最好的影響的硫離子擴散程度。

摘要(英)

In the recent research, there were documents mentioned that the cadmium ion will diffuse on the surface of the CIGS thin film by depositing the CdS thin film on the CIGS thin film with chemical bath deposition (CBD). The other documents confirmed the properties of the CIGS on surface were transferred from p-type to n-type (n-CIGS:Cd). This would form the pn-junction inside the CIGS thin film, and there were benefits on fewer defects in depletion region and more Electron-hole pairs collected in the deeper position inside of the CIGS thin film. There were many research used prior the ion-soaking solution to diffuse cadmium ion into the CIGS thin film to deposit CdS thin film on CIGS thin film for increasing the thickness of n-CIGS:Cd, but no one could indicate clearly what the degree of the cadmium ion diffused into the CIGS thin film would have the best effectively doping for the CIGS thin film.
In this experiment, we found the method to distinguish how long did the different parameter of the cadmium diffused into the CIGS thin film post-annealing at 200℃ need to be the best effectively doping for the CIGS thin film by the analysis of the X-ray Photoelectron Spectrometer (XPS) and the Photoluminescence spectrum (PL). In addition, we found the sulfur ion diffused into the CIGS thin film would affect the CIGS thin film better, and what the degree of the sulfur ion diffused into the CIGS thin film would have the best affect to the CIGS thin film.

關鍵字(中)

★ 硫化鎘
★ 離子擴散
★ CIGS元件

關鍵字(英)

★ CdS
★ CIGS
★ ion
★ soaking

論文目次

第一章緒論.................................................1
1-1 背景...................................................1
1-2 文獻回顧................................................2
1-2-1 吸收層CIGS的介紹......................................4
1-2-2 緩衝層的介紹..........................................8
1-3 研究動機...............................................12
第二章基礎理論............................................14
2-1 太陽能電池基礎理論......................................14
2-2 CdS的化學水浴法成膜原理.................................18
2-2-1 化學水浴沉積法介紹....................................18
2-2-2 硫化鎘成膜機制.......................................19
2-3 量測儀器原理...........................................21
2-3-1 X-ray光電子能譜儀原理.................................21
2-3-2 光激發螢光原理.......................................22
第三章實驗步驟與方法.......................................24
3-1 基板清洗...............................................24
3-2 實驗方法與裝置.........................................25
3-2-1 化學水浴法沉積硫化鎘方法...............................26
3-2-2 鎘擴散方法...........................................26
3-3 實驗量測...............................................27
3-3-1 X-ray光電子能譜儀量測.................................27
3-3-2 螢光光譜量測.........................................28
第四章實驗結果與討論.......................................29
4-1 實驗(一)─硫化鎘........................................29
4-2 實驗(二)─CIGS太陽能電池元件.............................39
4-3 實驗(三)─鎘離子擴散.....................................45
第五章結論................................................60
參考文獻...................................................61

參考文獻

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指導教授

李正中(Cheng-Chung Lee)

審核日期

2012-9-25

推文