博碩士論文 992206050 詳細資訊




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姓名 游政璋(Cheng-chang Yu)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 點接觸電極與背面鈍化層結構對異質接面太陽能電池效率之影響
(Influence of point contact electrode and back surface passivation on HJ cell efficiency)
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摘要(中) 本研究為將點接觸(point-contact)電極結構的概念運用於異質接面太陽能電池(Heterojunction solar cell)上,期望以熱氧化矽和氮化矽所堆疊的鈍化層搭配點接觸電極的概念,運用在不同以往的異質接面太陽能電池結構上。
在本研究的點接觸形式是利用矽化鎳(NiSi)當作N型異質接面太陽能電池的背部電極。沒有和矽化鎳接觸部分以熱氧化矽與氮化矽的堆疊結構作矽基板表面鈍化。另外在元件的背部光學反射特性,我們探討鈍化層的厚度,使光經過背部電極作高反射,以提升太陽能電池的內、外部量子效應,進而增加太陽能電池效率。實驗證明此異質接面太陽能電池的轉換效率有10.5%,其開路電壓約為505 mV,短路電流密度約為36.7mA/cm2,填滿因子約為57%。
摘要(英) We study the effect on point contact electrode of amorphous/crystalline silicon-heterojunction (SHJ) solar cells. The point-contact structure was using NiSi as back electrode. The area without NiSi was deposited with thermal oxide and silicon nitride as passivation layer. The thickness of passivation layer has been optimized to enhance device optical property, which means light go through the device will be reflected back by the back electrode. The internal and external quantum efficiency of solar cells thus could be improved. The result showed that the conversion efficiency of the SHJ solar cell is 10.5%, the open circuit voltage VOC is about 505 m V, the short-circuit current density JSC is 36.7 and fill factor FF is about 57% .
關鍵字(中) ★ 矽化鎳
★ 點接觸
★ 異質接面太陽能電池
★ 鈍化層
關鍵字(英) ★ Nickel silicide
★ Point contact
★ Heterojunction solar cell
★ Passivation layer
論文目次 第一章 緒論....................1
1.1 研究背景....................1
1.2 研究動機....................4
1.3 論文架構....................5
第二章 文獻回顧....................6
2.1矽太陽能電池的發展....................6
2.2鈍化層對矽太陽能電池的影響....................7
2.3熱氧化矽鈍化層以及熱氧化矽與氮化矽對疊鈍化層介紹........8
第三章 介紹基本理論....................10
3.1太陽能電池工作原理....................10
3.2矽材料內載子的產生(generation)與複合(recombination)........13
3.2.1複合機制....................14
3.2.1.1 輻射復合(Radiative recombination)..........14
3.2.1.2 歐傑復合(Auger recombination)..............16
3.2.1.3缺陷所造成的復合(Recombination through defects)..18
3.3薄膜光學理論應用在光學反射....................23
3.3.1單層膜之反射與透射....................24
3.3.2多層膜之反射與透射....................25
第四章 實驗設計與規劃....................27
4.1實驗架構....................27
4.2實驗流程....................27
第五章 背部接觸....................30
5.1 背部接觸-製作流程....................33
5.2 背部接觸-實驗結果與討論....................38
第六章 高反射特性....................45
6.1高反射特性-製作流程....................45
6.1.1高反射特性-製作流程(Essential Macleod光學薄膜設計) ...45
6.1.2高反射特性-實驗結果與討論(Essential Macleod光學薄膜設計)...47
6.1.3高反射特性-製作流程(實際量測部分)....................49
6.1.4高反射特性-實驗結果與討論(實際量測部分)...............50
第七章 矽表面鈍化....................52
7.1矽表面鈍化-製作流程....................53
7.2矽表面鈍化-實驗結果與討論....................54
第八章 點接觸電極的異質接面太陽能電池....................57
8.1點接觸電極的異質接面太陽能電池-製作流程....................58
8.2點接觸電極的異質接面太陽能電池-實驗結果與討論................59
8.2.1參考片與結構片的差異性....................59
8.2.2退火溫度對元件效率的影響....................61
8.2.3點間距對元件效率的影響....................62
第九章 結論....................66
第十章 未來研究方向....................67
附錄一....................69
附錄二....................73
參考文獻....................74
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[10.2] Yevgeniya Larionova, Verena Mertens, Nils-Peter Harder, and Rolf Brendel, “Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks”, Applied Physics Letters, 96 (3) , 032105 (2010).
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[a1] http://web.eecs.umich.edu/~singh/semi.html
[b1] Jan Schmidt, Mark Kerr and Andrés Cuevas, “Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks”, Semiconductor Science and Technology, 16, pp. 164–170 (2001).
[b2] Yevgeniya Larionova, Verena Mertens, Nils-Peter Harder, and Rolf Brendel, “Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks”, Appl. Phys. Lett., 96 (3) , 032105 (2010).
指導教授 李正中、陳昇暉
(Cheng-chung Lee、Sheng-hui Chen)
審核日期 2012-10-15
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