參考文獻 |
[1] G. Evans and R. Greif, ※Effect of Boundary Conditions on the Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor, ㄑNumerical Heat Transfer , Vol. 12, pp. 243-252, 1987.
[2] G. Evans and R. Greif, ※A Numerical Model of the Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor,ㄑTransactions of the ASME, Journal of heat transfer, Vol. 109, pp. 928-935, 1987.
[3] I. FOTIADIS, Anthony MKREMER, Donald R. McKENNA and Klavs F. JENSEN, ※Complex flow phenomena in vertical MOCVD reactors : effect on deposition uniformity and interface abruptness.ㄑ, Journal of Crystal. Growth, Vol.85, pp. 154-164, 1987.
[4] A. H. Dilawari and J. SZEKELY, ※Computed results for the deposition rates and transport phenomena for an MOCVD system with a conical rotating substrate.ㄑ, Journal of Crystal Growth, Vol.97, pp. 777-791, 1987.
[5] S. Patnaik and R. A. Brown, ※Hydrodynamic dispersion in rotating-disk OMVPE reactors : Numerical simulation and experimental measurements.ㄑ, Journal of Crystal Growth, Vol. 108, pp. 491-498, 1988.
[6] F. Durst, L. Kadinskii, ※Numerical study of transport phenomena in MOCVD reactors using a finite volume multigrid solver. ㄑ, Journal of Crystal Growth, Vol. 125, pp. 612-626, 1991.
99
[7] G. W. Young, S. I. Hariharan, and R. Carnahan, ※Flow effects in a vertical CVD Reactor,ㄑ SIAM Journal on Applied Mathematics , Vol.52, pp. 1509-1532, 1992
[8] W. Y. Chung, D. H. Kim, and Y. S. Cho, ※Modeling of Cu Thin Film Growth by MOCVD Process in a Vertical Reactor,ㄑ Journal of Crystal Growth , Vol. 180, pp 691-697, 1997.
[9] S. Joh and G. H. Evans, ※Heat Transfer and Flow Stability in a Rotating Disk/Stagnation Flow Chemical Vapor Deposition Reactor,ㄑ Numerical Heat Transfer, Part A: Applications , Vol. 31, pp. 867-879, 1997.
[10] D. W. Weyburne and B. S. Ahem, ※Design and operating considerations for a water-cooled close-spaced reactant injector in a production scale MOCVD reactor,ㄑJournal of Crystal Growth, Vol. 170, pp. 77-82, 1997.
[11] Theodoros G. Mihopoulos, ※Simulation of flow and growth phenomena in a close-spaced reactorㄑJournal of Crystal Growth, Vol. 195, pp. 725-732, 2000
[12] A. G. Mathews and J. E. Peterson, ※Flow Visualizations And Transient Temperature Measurements In An Axisymmetric Impinging Jet Rapid Thermal Chemical Vapor Deposition Reactor,ㄑJournal of Heat Transfer, Vol. 124, pp. 564-570, 2002.
[13] C. Park, J. Y. Hwang, M. Huang and T. J. Anderson, ※Investigation Of An Up Flow Cold-Wall CVD Reactor By Gas Phase Raman
100
Spectroscopy,ㄑThin Solid Films, Vol. 409, pp. 88-97, 2002.
[14] H. V. Santen, C. R. Kleijn, E. A. Harry and V. D. Akker, ※On Turbulent Flow In Cold-Wall CVD Reactor,§ Journal of Crystal Growth, Vol. 212, pp. 299-310, 2000.
[15] G. Luo, S. P. Vanka and N. Glumac, ※Fluid Flow And Transport Processes In A Large Area Atmospheric Pressure Stagnation Flow CVD Reactor For Deposition Of Thin Films,§ International Journal of Heat and Mass Transfer, Vol. 47, pp. 4979-4994, 2004.
[16] B. Mitrovic, A. Gurary, L. Kadinski, ※On the flow stability in vertical rotating disc MOCVD reactors under awide range of process parameters,§ Journal of Crystal Growth, Vol. 287, pp. 656每663, 2005.
[17] B. Mitrovic, §A. Parekh, J. Ramer, ※Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors,§ Journal of Crystal Growth, Vol. 289, pp. 708-714, 2006.
[18] B. Mitrovic, Alex Gurary, William Quinn, ※Process conditions optimization for maximum deposition rate and uniformity in vertical rotating disc MOCVD reactors based on CFD modeling,§ Journal of Crystal, Vol. 303, pp. 323-329, 2007.
[19] ZHONG ShuQuan, ※Numerical studies on flow and thermal fields in MOCVD reactor,§ Chinese Science Bulletin, Vol. 55,pp. 560-566, 2009.
[20] C. H. Lin, W. T. Cheng, ※Effect of embedding a porous medium on the deposition rate in a vertical rotating MOCVD reactor based on CFD modeling,§ International Communications in Heat and Mass Transfer, Vol. 36, pp. 680-685, 2009.
[21] 絻ㄛVLSI 庨婖撮胍ㄛ詢蕾衄癹鼠侗ㄛ1996﹝
101
[22] M. Meyyappanㄛcomputational modeling in semiconductor processing, Longman Scientific & Technicalㄛ1994
[23] 源祩轄ㄛ圉闚桽隴撮胍ㄛ?赽馱堤唳扦ㄛ2009﹝
[24] 湮傖ㄛ踢衄趙磁昜眈濠儒價渙摯蚚ㄛ褪堤唳扦ㄛ2008﹝
[25] D. K . Kim, ※Particle behavior in a vertical channel with thermal convection in the low Grashof number regime,ㄑ Computers & Fluids, Vol. 48, pp. 183-191.
[26] 豌峎捚杻禎ㄛ閉曾閨楷俶拸儂趙昜ㄛ褪悝堤唳扦ㄛ1985.
[27] ANSYS FLUENT 12.0ㄛUser ’ s Guideㄛ2009﹝
[28] 卼傖ㄛ衄癹啋匼楊ㄛ湮堤唳扦ㄛ2003﹝
[29] H. SchlichtingㄛBoundary-Layer TheoryㄛMcGraw Hillㄛ1979﹝
[30] 間媢瑕ㄛANSYS 12.0衄癹啋匼煦昴俇忒ㄛ?赽馱堤唳扦ㄛ2011﹝
[31] ANSYS FLUENTㄛFLUENT價渙掝最ㄛ湮堤唳扦ㄛ2012﹝
[32] Chang-Yong Shin, ※Numerical analysis for the growth of GaN layer in MOCVD reactor, ㄑ Journal of Crystal Growth, Vol. 247, pp. 301-312, 1998.
[33] C. Hemmingsson, ※Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor,ㄑ Journal of Crystal
102
Growth, Vol. 310, pp. 906-910, 2007.
[34] L. Kadinski, ※Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors,ㄑ Journal of Crystal Growth, Vol. 261, pp. 175-181, 2004.
[35] Ran Zuo, ※Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets,ㄑ Journal of Crystal Growth, Vol. 293, pp. 498-508, 2006.
[36] Theodoros G, ※A reaction-transport model for AlGaN MOVPE growthㄑ Journal of Crystal Growth, Vol. 195, pp. 733-739, 1998.
[37] A. Hirako, M. Yoshitani, ※GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysis,ㄑ Journal of Crystal Growth, Vol. 237-239, pp. 931-935, 2002.
[38] A. Hirako, ※Analysis of TMGa/NH3/H2 reaction system in GaN-MOVPE growth by computational simulation,ㄑ Physical States Solid, Vol. 203, pp. 1716-1719, 2006.
[39] Chyi-Yeou SOONG, ※Thermo-Flow Structure and Epitaxial Uniformity in Large-Scale Metalorganic Chemical Vapor Deposition Reactors with Rotating Susceptor and Inlet Flow Control,ㄑ Journal of Apply physical, Vol. 37, pp. 5823-5834, 1998.
[40] Dimitrios I. FOTIADIS, ※TRANSPORT PHENOMENA IN VERTICAL REACTORS FOR METALORGANIC VAPOR PHASE EPITAXY,ㄑ Journal of Crystal Growth, Vol. 102, pp. 441-470, 1990.
[41] ALAN G. THOMPSON, ※The scaling of CVD rotating disk reactors
103
to large sizes and comparison with theory,ㄑ Journal of Electronic Materials, Vol. 25, pp. no 9, 1996.
[42] J. H. Boo, ※Growth of SiC thin films on graphite for oxidation-protective coating, ㄑ Journal of Vacuum Society, Vol. 18, no 4, 2000. |