參考文獻 |
[1.1] Photon International, http:/www.photon-magazine.com/
[1.2] W. Schockley and H. J. Queisser, “Detailed balance limit of efficiency of p-n junction solar cells” , Appl. Phys. Lett. 32 (1961) 510-519.
[1.3] I. Alferov, “The history and future of semiconductor heterostructures from the point of view of a Russian scientist” , Phys. Scr. 68 (1996) 32-45
[1.4] I. Alferov, “Classical heterostructures paved the way” , III-Vs Review 11(1) (1998) 26-31.
[1.5] T. Calow, J. Deasley, J. Owen, et al, “A Review of Semiconductor Heterojunctions ” , J. Mater. Sci. 2(1) (1967) 88-96.
[1.6] A. H. Kalma, J. C. Corelli, Phys. Rev. Lett. 173 (1968) 374.
[1.7] A. J. Lewis, “Use of hydrogen in the transport properties of amorphous germanium” , Phys. Rev. B 14 (1970) 658-668.
[1.8] M. Iwamoto, K. Minami, T. Yamaoki, “Photovoltaic device” , United States Patent, No.5066340 (1991)
[1.9] M. Tanaka, M. Taguchi, T. Matsuyama, T. Sawada, S. Tsuda, S. Nakano, H. Hanafusa and Y. Kuwano, “Development of new a-Si/c-Si Heterojunction solar cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)” , Appl. Phys. Lett. 31 (1992) 3518-3522.
[1.10] K. S. Ji, J. H. Choi, H. J. Yang, H. M. Lee, D. K. Kim,“A study of crystallinity in amorphous Si thin films for silicon heterojunction solar cells” , Sol. Energy Mater. Sol. Cells 95 (2011) 203-206.
[1.11] M. Taguchi, K. Kawamoto, S. Tsuge, T. Baba, H. Sakata, M. Morizane, K. Uchihashi, N. Nakamura, S. Kiyama and O. Oota,“HITTM Cells─High-Efficiency Crystalline Si Cells with Novel Structure” , Photovolatics: research and applications (2000) 503-513.
[1.12] M. Tanaka, et al, “Development of hit solar cells with more than 21% conversion efficiency and commercialization of highest performance hit modules” , Photovoltaic Energy Conversion (2003) 955-958
[1.13] M. Taguchi, A. Terakawa, Y. Yoshimine, D. Ide, T. Baba, M. Shima, H. Sakata, M. Tanaka, “Sanyo’s Challenges to the Development of High-efficiency HIT Solar Cells and the Expansion of HIT Business” , Photovoltaic Energy Conversion (2006) 1455-1460
[1.14] A. Ogane, Y. Tsunomura, D. Fujishima, A. Yano, H. Kanno, T. Kinoshita, H. Sakata, M. Taguchi, H. Inoue and E. Maruyama, “Recent progress of HIT solar cells heading for the higher conversion efficiencies” , 21th International Photovoltaic Science and Engineering Conference, Fukuoka, (2011).
[1.15] D. L. Staebler and C. R. Wronski, “Reversible conductivity changes in discharge-produced amorphous Si” , Appl. Phys. Lett. 31 (1977) 292-294.
[1.16] B. Jagannathan, W. A. Anderson, J. Coleman, “Amorphous silicon/p-type crystalline silicon heterojunction solar cells” , Sol. Energy Mater. Sol. Cells 46 (1997) 289-310.
[2.1] 莊達人,《VLSI製造技術》,高立圖書有限公司 (2005)
[2.2] W. R. Grove, “On the electro-chemical polarity of gases” , Phil. Trans. 142, (1852) 87-101.
[2.3] J. K. Robertson and C. W. Clapp, “Removal of metallic deposits by high-frequency currents” , Nature 132 (1933) 479-480.
[2.4] J. I. Lodge and R. W. Stewart, “Studies in high frequency discharges” , Can. J. Res. 26A (1948) 205-221.
[2.5] 田民波,《薄膜技術與薄膜材料》,五南圖書出版股份有限公司 (2007)
[2.6] 李正中,《薄膜光學與鍍膜技術》,第六版,藝軒圖書出版社 (2009)
[2.7] S. O. Kasap, “Optoelectronics and Photonics: Principles and Practices” , Prentice-Hall (2001).
[2.8] D. A. Neamen, “Semiconductor Physics and Devices” , McGraw-Hill (2003)
[2.9] 莊嘉琛,《太陽能工程-太陽電池篇》,全華圖書股份有限公司 (2008)
[2.10] R. W. Collins, C. Y. Huang, “Optical properties of amorphous multilayer structures” , Physical Review B 34 issue 4 2910-2913 (1986).
[2.11] 許峰誠,《以射頻濺鍍製作異質接面矽太陽能電池之研究》,中央大學碩士論文 (2011)
[2.12] S. Fonash, “SOLAR CELL DEVICE PHYSICS” , Elsevier Inc. (2010).
[2.13] S. O. Kasap, Optoelectronics and Photonics: Principles and Practices, (Prentice-Hall publications, 2001).
[2.14] T. Mishima, M. Taguchi, H. Sakata, E. Maruyama, “Development status of high efficiency HIT solar cells” , Sol. Energy Mater. Sol. Cells 95 (2011) 18-21.
[2.15] Y. Yan, M Page, T. H. Wang, M. Jassim, M. Branz, Q. Wang, “Atomic structure and electronic properties of c-Si/a-Si:H heterointerfacies” , Appl. Phys. Lett. 88 (2006) 121925.
[2.16] R. Schropp and M. Zeman, “Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology” , (Kluwer Academic Publishers, 1998).
[3.1] 許樹恩、吳泰伯,《X光繞射原理與材料結構分析》,民全書局 (1993)
[3.2] R. W. Collins, C. Y. Huang, “Optical properties of amorphous multilayer structures” , Phys. Rev. B 34 (1986) 2910-2913.
[3.3] HORIBA傅立葉轉換紅外線光譜儀(FTIR)使用手冊
[3.4] A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon” , Phys. Rev. B 45 (1992) 13367-13377.
[3.5] M. Sasaki, S. Okamoto, Y. Hishikawa, S. Tsuda, S. Nakano, “Sol. Energy Mater. Sol. Cells” , 34/1-4 (1994) 541.
[3.6] 張庭維,《以定光電流量測之吸收係數分析矽薄膜缺陷密度之研究》,國立中央大學碩士論文 (2010)
[3.7] 王宣文,《以濺鍍法製作矽異質接面太陽能電池之研究:矽薄膜特性對原件效率的影響》,國立中央大學博士論文 (2012)
[3.8] W. J. Wang, C. L. Zhou, “Lifetime measurement for minority carrier of crystalline silicon solar cells” , China Measurement Technology vol.33 No.6 (2007).
[4.1] K. Fukutani, M. Kanbe, W. Futako, B. Kaplan, T. Kamiya, C.M. Fortmann, I. Shimizu, “Band gap tuning of a-Si:H from 1.55eV to 2.10eV by intentionally promoting structural relaxation” , J. Non-Cryst. Solids 227-230 (1998) 63-67.
[4.2] C. Koch, M. Ito, M. Schubert, “Low-temperature deposition of amorphous silicon solar cells” , Sol. Energy Mater. Sol. Cells 68 (2001) 227-36.
[4.3] R. Schropp and M. Zeman, “Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology” , Kluwer Academic Publishers (1998).
[4.4] H. Curtins, M. Favre, in: H. Fritzsche (Ed.), “Advances in Amorphous Semiconductors: Amorphous Silicon and Related Materials” , World Scientific, Singapore (1989) 329.
[4.5] M. Jeon , S. Yoshiba, K. Kamisako, “Hydrogenated amorphous silicon film as intrinsic passivation layer deposited at various temperatures using RF remote-PECVD technique” , Curr. Appl. Phys. 10 (2010) 237–240.
[5.1] U. Das , S. Bowden, M. Burrows , S. Hegedus , R. Birkmire, “Effect of process parameter variation in deposited emitter and buffer layers on the performance of silicon solar heterojunction solar cells” , 2 (2006) 1283-1286.
[5.2] H. Fujiwara, M. Kondo, “Effects of a‐Si:H layer thicknesses on the performance of a‐Si:H/c‐Si heterojunction solar cells” , J. Appl. Phys. 101 (2007) 054517.
[7.1] 周凌毅,《反應式濺鍍過渡態矽薄膜之研究》,中央大學碩士論文 (2009) |