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姓名 陳俊明(Chun-ming Chen) 查詢紙本館藏 畢業系所 電機工程學系 論文名稱 次微米磷化銦/砷化銦鎵異質接面雙極性電晶體自我對準基極平台開發 相關論文 檔案 [Endnote RIS 格式]
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至系統瀏覽論文 ( 永不開放)
摘要(中) 為了將異質接面雙極性電晶體操作頻率提升至兆赫(THz)等級,則必須
將元件尺寸微縮至次微米等級,以降低元件的RC 延遲時間,來達到THz
電晶體的目標。本論文主要為討論在元件的微縮過程中 ,將遭遇到的製程
瓶頸及解決方法。
我們透過電子束微影技術並利用多層光阻組合結構,成功的將射極金
屬線寬微縮至150 奈米,並將射極金屬的外觀形貌由長方體輪廓改為上寬
下窄的T 形輪廓以提高基極金屬自我對準的製程良率,且提出一製作射極
金屬側壁的製程,能避免次微米元件在濕蝕刻製程時容易遇到的電化學效
應發生,使元件在蝕刻至基極材料表面時,射極平台周圍不會殘留多餘的
射極材料,導致射極定義線寬失真。除此之外,我們還發展了一套利用苯
並環丁烯(BCB)材料,以旋轉塗佈加上回蝕刻的方式,來完成的自我對準基
極平台定義製程,相對於利用成長二氧化矽或氮化矽來完成的基極平台定
義製程,能避免因利用電漿成長薄膜時所造成的元件增益衰退現象,且更
能有效保護射極平台及射極平台與基極金屬間的基極材料表面,使元件能
在不傷害特性的條件下以濕蝕刻的方式蝕刻至次集極材料表面。
因此,本論文的結果將有助於未來次微米異質接面雙極性電晶體的元
件製作,使元件能順利達到THz 之目標。摘要(英) To achieve terahertz operation, the emitter size of heterojunction bipolar
transistors (HBTs) must be scaled down to sub-micron meter to minimize the
RC delay time. In this work, we focus on solving the bottleneck of fabricating
sub-micron meter HBTs.
By using e-beam lithography technology and multi-layer photoresist
process, an emitter metal with minimum linewidth of 0.15 μm has been
demonstrated. Moreover, a unique T-shape emitter is proposed to improve the
yield of self-aligned base metallization process. We have also developed a SiO2
dielectric sidewall process to avoid the electrical-chemical effect during the
emitter mesa etching while maintain the effective emitter linewidth. Base on the
SiO2 sidewall technology, we propose a novel self-aligned base mesa process
using spin-coated Benzocyclobutene (BCB). The use of spin-coated BCB can
avoid the ion bombard problem during the plasma etching process and leads to a
low damage surface of the device under process. Electrical measurements show
that the cross point of the base and collector currents in the Gummel plot can be
suppressed for 2 to 3 orders of magnitude, which indicate that the technology
developed in this work will greatly benefit the realization of THz HBTs.關鍵字(中) ★ 次微米
★ 異質接面雙極性電晶體關鍵字(英) 論文目次 摘要………………………………………………………………………………I
Abstract………………………………………………………………………….II
誌謝…………………………………………………………………………….III
目錄…………………………………………………………………………….IV
圖目錄…………………………………………………………………………VII
表目錄………………………………………………………………………..VIII
第一章 導論…………………………………………………………………….1
1.1 序論 ..…..……………………………………………………………..1
1.2 研究動機..…..…………………………………………………………5
1.3 章節簡述…....…………………………………………………………5
第二章 次微米射極製程開發………………………………………………….6
2.1 序論……………………………………………………………………6
2.2 電子束微影簡介……………………………………………………….7
2.2.1 電子束微影發展過程………………………………………….7
2.2.2 電子束微影系統……………………………………………….7
2.2.2.1 原理……………………………………………………7
2.2.2.2 電子源…………………………………………………8
V
2.2.2.3 電子光學圓柱…………………………………………9
2.2.2.4 電磁透鏡……………………………………………..10
2.2.2.5 電子束偏折系統……………………………………..10
2.2.2.6 電子束掃描方式…….……………………………….11
2.2.2.7 晶圓平台移動方式………………………….……….12
2.2.2.8 電子束照射形狀……………………………..………12
2.3 射極金屬定義與蒸鍍………………………..……………………….15
2.3.1 金屬蒸鍍系統的選用………………………………………...15
2.3.2 電子束光阻結構與金屬輪廓………………………………...17
2.3.2.1 長方體金屬輪廓……………………………………..17
2.3.2.2 T 型金屬輪廓…………………………………………19
2.3.3 電子束曝光劑量與顯影時間………………………………...22
2.4 射極平台製作………………………………………………………..24
2.5 射極特徵歐姆接觸電阻特性探討…………………………………..29
2.5.1 實驗設計……………………………………………………...30
2.5.2 實驗結果…………………………………………………...…31
2.6 結論…………………………………………………………………..33
第三章 自我對準基極平台製程發展………………………………………...34
3.1 序論……………………………………………………………………34
VI
3.2 基極平台製程發展……………………………………………………35
3.2.1 電子束負光阻微影製程……………………….……………..36
3.2.2 蒸鍍二氧化矽薄膜搭配乾蝕刻製程……………………..….38
3.2.3 沉積氮化矽或二氧化矽薄膜製程…………………………...42
3.3 BCB 基極平台定義製程……………………………………………..50
3.4 試片結構……………………………………………………………..56
3.5 元件特性……………………………………………………………..58
3.6 結論…………………………………………………………………..62
第四章 結論…………………………………………………………………...63
參考文獻.............................................................................................................65參考文獻 [1] M. Urteaga, M. Seo, and M. J. W. Rodwell, “InP HBTs for THz frequency integrated circuits”, in Proc. IPRM, 2011, pp. 47-50.
[2] W. Snodrass, W. Hafez, and M. Fenf, “Pseudomorphic InP/InGaAs heterojunction bipolar transistors experimentally demonstrating fT = 765 GHz at 25℃ increasing to fT = 845 GHz at -55℃”, in IEDM Tech. Dig. , San Francisco, 2006, pp. 1-4.
[3] H. G. Liu, O. Ostinelli and C. R. Bolognesi, “600 GHz InP/GaAsSb/InP DHBTs grown by MOCVD with a Ga(As,Sb)graded-base and fT × BVCEO > 2.5 THz-V at room temperature”, in IEDM Tech. Dig., Washington, DC, 2007,
pp. 667-670.
[4] S. H. Chen, S. Y. Wang, R. J. Hsieh, and J. –I. Chyi, “InGaAsSb/InP double heterojunction bipolar transistors grown by solid-source molecular beam
epitaxy,” IEEE Electron Device Lett., vol. 28, no. 8, pp. 679-681, 2007.
[5] S. H. Chen, S. Y. Wang, K. H. Teng, and J. –I. Chyi, “Low turn-on voltage and high-current InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As double
heterojunction bipolar transistors”, IEEE E lectron Device Lett., vol. 27 , no. 9, pp. 655-657, 2008.
[6] B. Mazhari, and H. Morkoc,“Effect of collector-base valence-band
discontinuity on Kirk effect in double heterojunction bipolar transistors”, Appl. Phys. Lett., vol. 59, No. 17, pp. 2162-2164. 1991.
[7] C. R. Bolognesi, N. Matine, X. Xu, J. Hu, and M. L. W. hewalt, “Low-offset NpN InP/GaAsSb/InP double heterojunction bipolar transistors
with abrupt interfaces and ballistic ally launched collector electrons”, IEEE Device Research Conference, pp. 30-31, 1998.
[8] 張哲安,“次微米銻砷化銦鎵基極之異質接面雙極性電晶體製程開發
與射極尺寸效應之研究”,碩士論文,國立中央大學,民國一百年。
[9] L. F. Thompson, C. G. Willson and M.J.Bowden., Introduction to Microlithography, ACS, Washington DC, 1994.
[10] E. Samaroo, J. Raamot, P. Parry and G., Robertson., Electron Lett.(8), p. 2077, 1972.
[11] E. Weber and R. Moore., Solid State Technol.(22), p. 61, 1979.
[12] 邱燦賓、施敏,“電子束微影技術",科學發展月刊,第28卷第6
期, 2000。
[13] K.Suzuki, S.Matsui and Y.Ochiai., “Sub-Half-Micron Lithography for ULSIs”, Chapter 4, Cambridge University Press Cambridge, 1999.
[14] 龍文安,“積體電路微影製程",初版,高立圖書有限公司,台北,
1998。
[15] Y.Nakayama, S.Okazaki and N.Saitou., “Electron-beam Cell Projection Lithography:A New High-throughput Electro-beam Diret-Writing Technology Using a Specially Tailored Si Aperture” , J.Vac.Sci.Technol., 6(6), 1836-1840, 1990.
[16] Y.Sakitani, H.Yoda, H.Todokoro, Y.Shibata, T.Yamazaki and K.Ohbitu., “Electron-beam Cell Projection Lithography” , J. Vac. Sci. Technol., 10(6),
2759-2763, 1992.
[17] 蔡曜駿,“具有銅基板之磷化鋁銦鎵發光二極體的製作",碩士論文,
國立中央大學,民國九十四年。
[18] Y. K. Fukai et al. Microelectronics Reliability, Vol. 49, pp. 357-364, 2009.
[19] W. Hafez et al., Appl. Phys. Lett., vol. 91, 192114, 2009.
[20] 林祐聖,“銻砷化銦鎵基極之異質接面雙極性電晶體於高電流密度操作
後之特性研究”碩士論文,國立中央大學,民國100年。
[21] D.Caffin, L.Bricard, “PASSIVATION ON INP-BASED HBT’S FOR HIGH
BIT RATE CIRCUIT APPLICATIONS”, pp.637-640, 1997.
[22] R.F. HOPF, R.A. HAMM, “Evaluation of Encapsulation and Passivation of InGaAs/InP DHBT Devices for Long-Term Reliability”, Journal of Electronic Materials, Vol. 27, No. 8, 1998.
[23] Hong Wang, Geok Ing Ng, “Studies on the Degradation of InP/InGaAs/InP Double Heterojunction Bipolar Transistors Induced by Silicon Nitride Passivation”, J.Appl. Phys, Vol. 41, 2002, pp. 1059-1061.
[24] 王聖瑜,“磷化銦異質接面雙極性電晶體元件製作與特性分析”,碩士
論文,國立中央大學,民國九十三年。
[25] M. J. W. Rodwell et al., Int. Journal of High Speed Electronics and Systems. 11,159(2001)
[26] Urteaga, M.; Pierson, R.; Rowell, “130nm InP DHBTs with ft >0.52THz and fmax >1.1THz”, pp.281-282, 2011.指導教授 綦振瀛 審核日期 2013-1-21 推文 plurk
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