高敏感度金屬輔助波導共振感測元件之開發

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姓名

陳志恆(Zhi-heng Chen) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

高敏感度金屬輔助波導共振感測元件之開發
(Development of high sensitivity metal-assisted guided mode resonance sensor)

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摘要(中)

本研究目標在發展一免標定(label free)、即時偵測(real time)及高敏感度(high sensitivity)的波導共振(Guided Mode Resonance)檢測晶片。
波導共振元件是具有次波長結構的光學濾波器，將入射光繞射入波導共振元件中，其中間的波導層會產生一傳遞光，最後沿原方向反射回去，此即為共振波(resonance wave)。此波導共振元件表面的光柵層環境折射率(refractive index)不同會使共振波長的位置改變。
本研究在傳統波導共振元件中加入一金屬層(metal layer)，使得元件的敏感度提升。透過FDTD(Finite-Difference Time-Domain)軟體來模擬與探討各種不同實驗參數所得到的結果，在模擬中，波導厚度、光柵深度為模擬中主要的兩個變數，最後從模擬中找出最佳的實驗參數。配合得到的參數，利用半導體製程技術作出晶片，最後再利用晶片作各個不同折射率的鹽水溶液量測，用來找出晶片的敏感度。
本研究中實際製作與量測出傳統GMR晶片與含金屬層的GMR(本研究中稱為MaGMR：Metal-assisted Guided Mode Resonance)晶片其敏感度的大小，敏感度的單位為nm/RIU，指在單位折射率下共振波長偏移量的大小。從模擬結果中，得到GMR晶片敏感度為136nm/RIU，MaGMR晶片敏感度為338.5nm/RIU；從量測結果中，得到GMR晶片敏感度為103.3nm/RIU ，MaGMR晶片敏感度為376.7nm/RIU。模擬與量測結果都顯示出MaGMR晶片的敏感度優於GMR晶片。

摘要(英)

The target in this study is to develop a Guided Mode Resonance (GMR) biosensor which is label free, real time and high sensitivity.
The GMR sensor is an optical filter which has subwavelength structures, by launching the incident light into the waveguide structure, a specific wavelength light will be diffracted into the waveguide layer, finally reflected back along the original direction, which is called the resonance wave. The change of refractive index above the GMR structure causes a shift of the resonant wavelength.
In this study, we add a metal layer to the traditional GMR sensor and increase its sensitivity to the changes of refractive index above the GMR structure. Through the FDTD(Finite-Difference Time-Domain) software to simulate the optical prosperities of metal assisted guided mode resonance(MaGMR) sensor and optimize the sensitivity. In the simulations, the thickness of the waveguide and the grating depth are the two major variables. A chip according to the optimized simulation parameter is fabricated and also demonstrated.
In this study, the measurements of sensitivity are compared with a traditional GMR sensor. The unit of sensitivity is nm/RIU which means the value of the resonant wavelength shift under one unit of refractive index. In the simulation results and measurement results, the sensitivity of MaGMR is 338.5nm/RIU and 376.7nm/RIU respectively; the sensitivity of GMR is 136nm/RIU and 103.3nm/RIU respectively, both the simulation and measurement results show that the sensitivity of MaGMR sensor is better than GMR sensor.

關鍵字(中)

★ 生醫晶片

關鍵字(英)

★ GMR

論文目次

論文電子檔授權書 I
紙本論文延後上架申請書 II
論文指導教授推薦書 III
論文口試委員審定書 IV
中文摘要 V
Abstract VII
誌謝 VIII
目錄 IX
圖目錄 XII
表目錄 XV
第一章簡介 1
1.1 生醫晶片歷史 7
1.1.1 表面電漿共振 9
1.1.2 光波導技術 10
1.1.3 電子感測技術 11
1.2 GMR生醫晶片發展概況 12
1.3 研究動機 15
第二章 GMR元件 16
2.1 GMR元件的工作原理 16
2.1.1 GMR元件的物理結構 17
2.1.2 光柵繞射原理 18
2.1.3 GMR元件的共振波長 21
2.2 MaGMR元件的工作原理 23
2.2.1 MaGMR元件的物理結構 23
2.2.2 邊界條件 24
第三章光學模擬 25
3.1 設計 25
3.1.1 簡化公式之推導 25
3.1.2 限制與需求 28
3.2 FDTD模擬 31
3.2.1 FDTD理論 31
3.2.2 頻譜響應 35
3.2.3 電場分佈 38
3.2.4 品質因數 40
3.2.5 bulk敏感度 44
第四章實驗結果 46
4.1 晶片製程 46
4.1.1 實驗儀器 47
4.1.2 半導體製程 49
4.1.2 利用雷射曝光製作次波長光柵 52
4.1.3 製程結果 55
4.2 頻譜響應 58
4.2.1 GMR頻譜響應 58
4.2.2 MaGMR頻譜響應 59
4.3 敏感度 61
4.3.1 GMR晶片敏感度 61
4.3.2 MaGMR晶片敏感度 63
4.3.3 敏感度比較與LOD 64
第五章結論 66
參考文獻 68

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指導教授

張正陽

審核日期

2013-8-15

推文