具有單空間模態,低發散角,高功率的鋅擴散二維850nm面射型雷射陣列

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：9

、訪客IP：18.117.107.90

姓名

張晉豪(Chin-Hao Chang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

具有單空間模態,低發散角,高功率的鋅擴散二維850nm面射型雷射陣列

相關論文

★ 氮化鎵串接式綠光發光二極體在超高溫(200 ℃)操作的高速表現之和其內部之載子動力學	★ 32Gbit/s 低耗能 850nm InAlGaAs 應變量子井面射型雷射
★ 具有大面積且在高靈敏度、低暗電流操作下具有頻寬增強效應的10 Gbit/sec平面式 InAlAs 累增崩潰光二極體	★ 應用串接式技術達到超高飽和電流-頻寬乘積(7500mA-GHz,75mA,100GHz)的近彈道傳輸光偵測器
★ 利用鋅擴散方式在半絕緣(GaAs)基板上製作可室溫操作、高速且低漏電流的InAs光檢測器	★ 應用超寬頻光子傳送混波器達到遠距分佈及調變的20Gbit/s無誤碼無線振幅偏移調變資料傳輸於W-頻帶
★ 具有同時高速資料傳輸及產生直流電功率的砷化鎵/磷化銦鎵的雷射功率轉換器	★ 超高速(>1Gb/s)可見光發光二極體應用於塑膠光纖通訊及內部載子動力學的研究
★ 具有超低耗能,傳輸資料量比值在850nm波段超高速(40 Gb/s)面射型雷射	★ 超高速(~300GHz)光偵測器的製造與其在毫米波生物晶片上的應用
★ 超高速覆晶式(>300GHz)高功率(~mW)光偵測器製作與量測	★ 應用於850到1550 nm波長光連結且具有高速,高效率和大面積的p-i-n光偵測器
★ 應用於中距離(2km)至短距離光連結知單模態、高速、高輸出光功率的850nm波段面射型雷射	★ 應用在光連接具有高可靠度高速(>25Gbit/sec) 850光波段的垂直共振腔雷射
★ 具有高可靠度/高功率輸出與直流到次兆赫茲 (≧300GHz)操作頻寬的超高速光偵測器和其覆晶式封裝設計與分析	★ 以磷化銦為基材,應用於850nm波段且具有高速(>25Gbit/sec),高效率大主動區孔徑的pin光檢測器之設計和分析

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

至系統瀏覽論文 ( 永不開放)

摘要(中)

我們證明了在850奈米波段的垂直共振腔面射型(VCSEL)雷射陣列上有高功率輸出、單模態的遠場、窄發散角的特性。我們透過是當的鋅擴散製程來調製鋅擴散孔徑跟氧化電流侷限孔徑的尺寸，使展現出每顆VCSEL都是高單模(highly single-mode)，窄遠場發散角（~6°）即有最大的輸出功率(~6.5mW)。而6x6跟10x10展現了單葉(single-lobe)遠場、窄發散角(~8°)，輸出功率分別達到104mW跟145mW。此外，透過量測陣列中不同位置的輸出光頻譜(optical spectra)，得知幾乎都是單模態的呈現，顯示出我們VCSEL陣列有良好的均勻性。此結果甚至優於其他大面積的同調激發(coherent lasing)光子晶體(photonic crystal)雷射。

摘要(英)

We demonstrate novel structures of 850 nm vertical-cavity surface-emitting laser (VCSEL) array for high output power, single-lobe far-field, and narrow divergence angle. By use of the Zn-diffusion process with proper sizes of oxide current-confined and Zn-diffusion apertures, each unit of VCSEL in the demonstrated array is highly single-mode (side-mode suppression ratio > 30 dB) with a narrow far-field divergence angle (~60) and high maximum single-mode output power (~6.5 mW). Due to the excellent uniformity of single-mode performance of each VCSEL unit, both 6×6 and 10×10 array exhibit a single-lobe far-field, narrow divergence angle (~80), and output power as high as 104 and 145 mW, respectively. Furthermore, by measuring the bias dependent output optical spectra in different positions of our array, the high similarity of these spectra indicates the excellent uniformity of our process for single-mode VCSEL performance. Such measured result is even comparable with the reported large-area coherent lasing photonic crystal laser.

關鍵字(中)

★ 面射型雷射
★ 陣列
★ 單模態

關鍵字(英)

★ VCSEL
★ arrays
★ single mode

論文目次

摘要 i
Abstract ii
圖目錄 v
表目錄 ix
第一章序論 1
1-1 VCSEL應用 1
1-2 面射型雷射簡介 2
1-3 單模態VCSEL製作 3
1-4水氧層掀離製作 8
第二章理論 9
2-1 VCSEL的磊晶結構 9
2-2 鋅擴散於DBR 12
2-3 VCSEL的選擇性水氧化理論 15
2-4 發散角 17
第三章實驗 19
3-1 鋅擴散製程 19
3-2 水氣氧化 21
3-3 製作電極以及金屬回火(Annealing) 23
3-4平坦化及製作金屬接線 25
第四章量測結果與討論 28
4-1量測系統 28
4-1-1. 光功率對電流(L-I)之量測 28
4-1-2. 遠場(Far field)之量測系統 28
4-1-3. 近場(Near field)投影之量測系統 29
4-1-4. 頻譜(Spectrum) 之量測系統 29
4-2 水氧化合併鋅擴散型VCSEL量測結果 30
4-2-1 VCSEL元件結構圖 30
4-2-2 輸出光功率對電流（L-I）曲線 31
4-2-3. 近場（Near field）投影 33
4-2-4.遠場(Far field)發散角(Divergence angle） 34
4-2-5. 光頻譜(Optical spectra)圖 36
4-3 Benchmark 38
第五章未來研究與討論 39
5-1 未來研究動機 39
5-2 量測結果 40
5-3 結論 44
Reference 45

參考文獻

[1] Hiromi Otoma, Akemi Murakami, Yasuaki Kuwata, Nobuaki Ueki, Naotaka Mukoyama, Takashi Kondo, Akira Sakamoto, Seiya Omori, Hideo Nakayama, Takeshi Nakamura, “Single-Mode Oxide-Confined VCSEL for Printers and Sensors,” in Proc. Electronics System Integration Technology Conf., vol. 1, pp. 80-85, Sep. 2006.
[2] Katsutoshi Takahashi, Hideyuki Nasu, Yoshinobu Nekado, Masayuki Iwase, Yoshikazu Ikegami, “1.1μm single mode VCSEL-base 4-channel x 10-Gbit/s parallel-optical module,” in Proc. OFC 2008, San Diego, CA, Feb. 2008, pp. OThS1.
[3] Jin-Wei Shi, C.-C. Chen, Y.-S. Wu, Shi Hao Guol, and Ying-Jay Yang“The Influence of Zn-Diffusion Depth on the Static and Dynamic Behavior of Zn-Diffusion High-Speed Vertical-Cavity Surface-Emitting Lasers at an 850 nm Wavelength＂IEEE J. Quantum Electron., vol. 45, no. 7, July 2009
[4] R. S. Geel, S. W. Corzine, J. W. Scott, D. B. Young, and L. A. Coldren, “Low threshold planarized Vertical-cavity surface-emitting lasers” IEEE, Photon. Technol. Lett. , vol. 2, 234, 1990.
[5] Akio Furukawa, Satoshi Sasaki, Mitsunari Hoshi, Atsushi Matsuzono, Kosuke Moritoh , Toshihiko Baba,” High-power single-mode vertical-cavity surface-emitting lasers with triangular holey structure,” Appl. Phys. Lett. ,vol 85, no. 22, Nov. 2004.
[6] E. W. Young, K. D. Choquette, S. L. Chuang, K. M. Geib, A. J. Fischer, and A. A. Allerman, “Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation,” IEEE Photon. Technol. Lett., vol. 13, pp. 927-929, Sep., 2001
[7] L. Bao, N.-H. Kim, L. J. Mawst, N. N. Elkin, V. N. Troshchieva, D. V. Vysotsky, and A. P. Napartovich, “Near-diffraction-limited coherent emission from large aperture antiguided VCSEL arrays,” Appl. Phys. Lett., vol. 84, pp.320-322, Jan., 2004.
[8] Susumu Noda, “Photonic crystal lasers—ultimate nanolasers and broad-area coherent lasers [Invited]” JOSA B, Vol. 27, Issue 11, pp. B1-B8 (2010)
[9] K. Tai, G. Hasnain. D. Wynn, R. J. Fischer and Y. H. Wang et al., “90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8μm diameter core silica fiber”, Elec. Lett. 13th, vol. 26 No.19,(1990)
[10] Y.J. Yang, T.G. Dziura, S. C. Wang, R. Fernandez, G. Du, and S. Wang, “Low threshold room-temperature operation of a GaAs single quantum well mushroom structure surface emitting lser”, Soc. Photo-opt Instrun. Eng.,vol. 1418, pp.414-421,(1991).
[11] Y.J. Yang, T. G. Dziura, R. Frenandez, S. C. Wang, G. Du, and S. Wang,”Low threshold operation of a GaAs single quantum wll mushroom structure surface emitting laser”, Appl. Phys. Lett., 58, pp.1780-1782(1991).
[12] Nguyen Hong Ky, J. D., Ganiere, M. Gailhanou, B. Blanchard, L. Pavesi, G. Burri, D. Araujo and F. K. Reinhart “Self-interstitial mechanism for Zn diffusion-induced disordering of GaAs/AlxGa1-xAs (x=0.1-1) multiple-quantum-well structures.” J. Appl. Phys. ,73, pp3769-3781 (1993).
[13] Van Vechten,” Intermixing of an AlAs-GaAs superlattice by Zn diffusion ” J. Appl. Phys.55, p.607(1984).
[14] W. D. Laidig, N. Holonyak, Jr., M. D. Camras, K.Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, “Disorder of an AlAs-GaAs superlattice by impurity diffusion“ Appl.Phys.Lett.38,776,(1981).
[15] I. Harrison, H. P. Ho, B. Tuck, M. Henini, and O. H. Hughes, “Zn diffusion-induced disorder in AlAs/GaAs superlattice”Semicond. Sci. Technol., 4, pp.841-846, (1989).
[16] 陳志誠”穩態單橫模和穩定極化的面射型雷射”國立台灣大學電機工程學系博士論文 (民國90年)
[17] R. G. Hunsperger, Integrated Optics:Theory and Technology, Hong Kong, Springer-Verlag, 77, (1992).
[18] S. K. Ageno, R. J. Roedel, N. Mellen, and J. S. Escher, Appl. Phys. Lett. 47, p.1193, (1985).
[19] C. J. Chang-Hasnain, M. Orenstein, A. V. Lehmen, L. T.Florez, and J. P. Harbison, “Transverse mode characteristics of vertical-cavity surface-emitting lasers” Appl. Phys. Lett., vol. 57, pp.218-220, 1990.
[20] B. E. Deal and A. S. Grove, “General Relationship for the Thermal Oxidation of Silicon”, J. Appl. Phys., vol. 36, p. 3770, (1965).
[21] M. Ochiai et al., Appl. Phys. Lett., 68, 1898(1996)][J. H. Kim , Appl. Phys. Lett. ,69, 3357(1996).
[22] Kent D. Choquette, Kent M. Geib, Carol I. H. Ashby, Ray D. Twesten, Olga Blum, Hong Q. Hou, David M. Follstaedt, B. Eugene Hammons, Dave Mathes, and Robert Hull, “Advances in Selective Wet Oxidation of AlGaAs Alloys” ,IEEE J. Sel. Topics In Quantum Electron., vol. 3, no. 3, June 1997.
[23] Kent D. Choquette, K. L. Lear, R. P. Schneider, Jr., K. M. Geib, J. J. Figiel, and Robert Hull, “Fabrication and Performance of Selectively Oxidized Vertical-Cavity Lasers” Photon. Tech. Lett. 7, 1237, (1995).
[24] N. Hplonyak, Jr., and J. M. Dallesasse, USA Patent ＃5,262,360 (1993).
[25] K. D. Choquette, K. M. Geib, H. C. Chui, B. E. Hammons, H. Q. Hou, T. J. Drummond, and R. Hull, “Selective oxidation of buried AlGaAs versus AlAs layers,” Appl. Phys. Lett. 69, 1935-1837 (1996).
[26] K. L. Lear, R. P. Schneidner, Jr., K. D. Choquette, and S. P. Kilcoyne, “Index guiding dependent effects in implant and oxide confined vertical-cavity lasers,” IEEE Photon. Technol. Lett., vol 8, pp.740-742,(1996).
[27] D. L. Huffaker, J. Shin, and D. G. Deppe, “Lasing characteristics of low threshold microcavity lasers using half-wave spacer layers and lateral index confinement,”Appl. Phys. Lett., vol 66, pp.1723-1725, (1995).
[28] K. D. Choquette, K. L. Lear, R. P. Schneider, Jr.,and K. M. Geib,”Cavity characteristics of selectively oxidized vertical-cavity lasers,”Appl. Phys. Lett., vol. 66, pp.3413-3415, 1995.
[29] Hermann A. Haus,”Waves and Fields in Optoelectronics”(1984).
[30] Weng W. Chow, Kent D. Choquette, Mary H. Crawford, Kevin L. Lear, and G. Ronald Hadley, “Design, Fabrication, and Performance of Infrared and Visible Vertical-Cavity Surface-Emitting Lasers”, J. Quantum Electron., 33, 1810-1824,(1997).
[31] Å. Haglund, S. J. Gustavsson, J. Vuk˘usic´, P. Jedrasik, and A. Larsson, “High-power fundamental-mode and polarisation stabilised VCSELs using sub-wavelength surface grating,” Electron. Lett., vol. 41, no. 14, pp. 805–807, July 2005.
[32] Akio Furukawa, Satoshi Sasaki, Mitsunari Hoshi, Atsushi Matsuzono, Kosuke Moritoh , Toshihiko Baba,” High-power single-mode vertical-cavity surface-emitting lasers with triangular holey structure,” Appl. Phys. Lett., vol. 85, no. 22, Nov. 2004.
[33] Turelight(TVS-K428-000) www.turelight.com.tw
[34] L. Bao, N.-H. Kim, L. J. Mawst, N. N. Elkin, V. N. Troshchieva, D. V. Vysotsky, and A. P. Napartovich, “Near-diffraction-limited coherent emission from large aperture antiguided VCSEL arrays,” Appl. Phys. Lett., vol. 84, pp.320-322, Jan., 2004.
[35] Dominic F. Siriani, Student Member, and Kent D. Choquette, “Electronically Controlled Two-Dimensional Steering of In-Phase Coherently Coupled Vertical-Cavity Laser Arrays”IEEE photonics technology letters,VOL,23,NO3,February 1,2011
[36] J. K. Doylend, M. J. R. Heck, J. T. Bovington, J. D. Peters, M. L. Davenport, L. A. Coldren, andJ. E. Bowers,“Hybrid silicon free-space source with integrated beam steering” Proc. SPIE 8629, Silicon Photonics VIII, 862911 (March 14, 2013); doi:10.1117/12.2004268

指導教授

許晉瑋(Jin-Wei Shi)

審核日期

2013-8-20

推文