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姓名 黃宣瑋(Hsuan-Wei Huang) 查詢紙本館藏 畢業系所 電機工程學系 論文名稱 銻化銦鎵/銻化鋁高電洞遷移率電晶體
(Fabrication and Characterization of InGaSb/AlSb High Hole Mobility Transistors)相關論文 檔案 [Endnote RIS 格式]
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摘要(中) 銻化銦鎵合金材料具備了化合物半導體塊材中最高的電洞遷移率，搭配上銻化物系列磊晶也同樣具備了極高電子遷移率的特性，使該磊晶系統可以形成類似CMOS的架構，特別適合應用在數位電路的領域上。本論文所使用的磊晶架構是由兩個較寬能隙的材料銻化鋁夾擠一較窄能隙的材料銻化銦鎵，形成第一型態的能帶結構，也就是量子井結構。在此結構中，主要載子電洞可以良好的被侷限在量子井內，形成一個高載子濃度與低片電阻的磊晶層，元件就可以利用該磊晶層而獲得大電流的結果。
本論文研究的銻化物磊晶主要設計包括上阻擋層的鈹摻雜，使通道的載子濃度提升，獲得大的操作電流。其次是調整底部緩衝層的厚度，使元件在截止狀態時可以壓低來自於底部的漏電流。最後把磊晶結構成長於矽基板之上，完成元件製作。在矽基板的磊晶元件製作上，利用離子佈植的方式成功製作出全平面型的元件，對於元件微縮的實現與長時間的操作上有很大的幫助。而元件的方面是製作T形閘極的元件，閘極線寬為0.25 μm，源極與汲極間距為2 μm，汲極飽和電流在汲極電壓為-3 V時為81.5 mA/mm，轉導值為75.0 mS/mm。元件在製作完成三個月後汲極飽和電流在相同偏壓下還具有90%的特性。摘要(英) The fabrication and characterization of AlSb/In0.4Ga0.6Sb/AlSb quantum well HEMTs are reported. These structures have an Al0.7Ga0.3Sb/AlSb composite buffer layer under the In0.4Ga0.6Sb channel, a Be doped AlSb top barrier layer, and In0.5Al0.5As/InAs composite cap layer. The epitaxial layer on GaAs substrate exhibited a maximum hole mobility 1080 cm2/V-s, channel hole density 1.76 × 1012 /cm2, and minimal channel sheet resistance 3276 Ω/□. The epitaxial structure on Si substrate exhibited a maximum hole mobility 800 cm2/V-s, channel hole density 1.00 × 1012 /cm2, and minimal channel sheet resistance 7815 Ω/□. The 2 μm Metal-Insulator-Semiconductor High-Electron-Mobility Transistors (MIS-HEMTs) on GaAs exhibited a maximum drain current of 55.1 mA/mm, a peak transconductance of 41.8 mS/mm. Moreover, fabrication and characterization of planar HEMTs with ion-implanted isolation were discuessed. The planar 0.25 μm HEMT exhibited a maximum drain current of 85.1 mA/mm, a peak transconductance of 75.0 mS/mm. The stability against AlSb oxidation during isolation process can be achieved by the ion-implantation isolation technique implemented in plannar AlSb/In0.4Ga0.6Sb/AlSb HEMTs. The planar HEMT remained 90% drain current after three month storage in air. 關鍵字(中) ★ 銻化物
★ 高電洞遷移率
★ 電晶體
★ 全平面型電晶體
★ 次微米電晶體關鍵字(英) ★ Sb
★ High Hole Mobility
★ Transistors
★ The planar transistors
★ Sub-μm transistors論文目次 摘要 ........................................................................................................................................ I
Abstract ............................................................................................................................... II
致謝 .................................................................................................................................... III
目錄 ..................................................................................................................................... IV
圖目錄 ................................................................................................................................. VI
表目錄 .................................................................................................................................. X
第一章 導論 ......................................................................................................................... 1
1-1 前言 ................................................................................................................................................... 1
1-2 研究動機 .......................................................................................................................................... 1
1-3 P型通道異質接面場效應電晶體之發展現況 ..................................................................... 4
1-4 論文架構 ........................................................................................................................................ 13
第二章 製作於砷化鎵基板之元件 ................................................................................... 14
2-1 前言 .................................................................................................................................................. 14
2-2 磊晶結構 ........................................................................................................................................ 14
2-2-1應力對磊晶結構能帶的影響 ........................................................................... 14
2-2-2 基本銻化銦鎵/銻化鋁磊晶結構(Epi 838) ...................................................... 16
2-2-3 批覆層厚度調整與上阻擋層銻化鋁摻雜鈹之磊晶結構(Epi 918) ............... 20
2-2-4 調整緩衝層厚度之磊晶結構(Epi 955、1045、1064、1074) ....................... 23
2-3 元件製程 ........................................................................................................................................ 27
2-3-1 標準蕭特基閘極元件製作流程 ...................................................................... 28
2-3-2 金屬氧化物半導體閘極元件製作流程 .......................................................... 33
2-3-3 鈍化之金屬氧化物半導體閘極元件製作流程 .............................................. 36
2-3-4 離子佈植全平面型元件製作流程 .................................................................. 38
2-3-5 次微米T形閘極元件製作流程 ...................................................................... 46
2-3-6 次微米崛入式金屬氧化物半導體閘極元件製作流程 .................................. 50
2-4 製作於砷化鎵基板之元件特性 ............................................................................................. 53
2-4-1 標準蝕刻型元件 .............................................................................................. 53
2-4-2 離子佈植全平面型元件 .................................................................................. 68
2-4-3 崛入式金屬複合型氧化物半導體閘極元件 .................................................. 78
2-5 結論 .................................................................................................................................................. 84
第三章 製作於矽基板之元件 ........................................................................................... 85
3-1 前言 .................................................................................................................................................. 85
3-2 成長在矽基板上之銻化銦鎵/銻化鋁量子井磊晶結構(Epi 1063) ............................. 85
3-3 製作於矽基板之元件特性 ....................................................................................................... 89
3-3-1 光學閘極離子佈植全平面型元件 .................................................................. 89
3-3-2 次微米離子佈植全平面型元件 ...................................................................... 93
3-4 結論 ................................................................................................................................................ 100
第四章 結論與未來展望 ................................................................................................. 102
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