| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 吳梓豪 | zh_TW |
| DC.creator | Zi-Hao Wu | en_US |
| dc.date.accessioned | 2013-11-28T07:39:07Z | |
| dc.date.available | 2013-11-28T07:39:07Z | |
| dc.date.issued | 2013 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=100521046 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文延續本實驗室已開發之複晶矽鍺柱/氮化矽/矽氧化生成鍺量子點之製程方法，更進一步詳細探討不同氧化條件與退火方式對於鍺量子點的形貌與內部缺陷之影響。同時將此方法運用於複晶矽鍺柱/氮化矽/SOI基板上，可以進一步實現一體成形之鍺/二氧化矽/GOI異質結構，有利於鍺場效電晶體與光電晶體之閘極工程應用。
本文利用穿透式電子顯微鏡（TEM）、能量散佈光譜儀（EDX mapping）與拉曼量測等材料分析方法來了解探討不同的氧化、退火等熱預算對於鍺量子點以及鍺殼的晶格形貌、結晶性、晶格方向、缺陷、矽鍺濃度與應力之演進改變。發現鍺量子點對於鄰近週遭氮化矽以及矽材之催化作用可加速氮化矽及矽材的局部氧化反應，該反應所釋放之矽原子部份再擴散融入鍺量子點之中造成鍺量子點在氮化矽與矽之中的移動，而且所融入的矽含量之多寡會明顯地改變鍺量子點的形貌。
本文對於藉由選擇性氧化生成之奈米鍺量子點及鍺殼與氧化熱預算之關連性進行系列性的探討分析。所提出之厚度均勻、受到壓應力且具固定晶格方向的矽鍺殼層不僅可自我對準於鍺量子點，而且擁有良好品質的二氧化矽介電層於二者之間，因此可作為後續鍺場效電晶體與光電晶體之閘極堆疊層與通道之應用。 | zh_TW |
| dc.description.abstract | This thesis continuously studied the formation of Ge QDs using thermal oxidation of poly-SiGe pillar/Si3N4/Si heterostructure in our lab, and further discussed the dependence of morphology and internal defects of Ge QD between oxidation and annealing conditions. Meanwhile, the author used this process on poly-SiGe pillar/ Si3N4/Si on insulator substrate in order to realize Ge/SiO2/Si on insulator heterostructure advantaging in the gate engineering of Ge MOSFET and phototransistor.
This thesis used transmission electron microscopy (TEM), energy dispersive X-ray (EDX) mapping and Raman analysis to investigate the evolution of morphology, crystallinity, lattice orientation, defects, Ge concentration and stress of Ge QD and shell under different thermal budget by modifying oxidation and annealing conditions. The author found that Ge QD catalytically enhances the local oxidation of underlying Si3N4 and Si. The released Si atoms diffuse into Ge QD and make the migration of Ge QD in Si3N4 and Si. In addition, the quantity of Si inward Ge QD obviously changes the morphology of Ge QD.
This thesis investigated the relationship between Ge QD/shell using selective oxidation and thermal budget. The demonstrated SiGe shell with uniform thickness, subject to compressive stress and stable (111) lattice orientation not only can be used in self-aligned Ge QD but also have good SiO2 quality between Ge QD and shell. Therefore, this heterostructure can be used as the application of gate stack and the channel of Ge MOSFET and phototransistor. | en_US |
| DC.subject | 鍺量子點 | zh_TW |
| DC.subject | 鍺殼 | zh_TW |
| DC.subject | 絕緣層基板 | zh_TW |
| DC.title | 生成鍺奈米量子點與鍺奈米殼於絕緣層基板上之應用研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Formation of Ge Quantum Dot and Shell for Si on Insulator Applications | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |