| DC 欄位 |
值 |
語言 |
| DC.contributor | 光電科學與工程學系 | zh_TW |
| DC.creator | 吳國偉 | zh_TW |
| DC.creator | Kuo-Wei Wu | en_US |
| dc.date.accessioned | 2016-7-27T07:39:07Z | |
| dc.date.available | 2016-7-27T07:39:07Z | |
| dc.date.issued | 2016 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=102256007 | |
| dc.contributor.department | 光電科學與工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文主要以（Amorphous silicon, a-Si）非晶矽TFT LCD技術及製程設備背景下，藉由半導體材料a-Si變更為Metal Oxide，也就是本篇論文所使用之材料IGZO (Indium Gallium Zinc Oxide為氧化銦鎵鋅的縮寫)來取代原使用之半導體材料，新材料可提供半導體更佳的電子遷移率、高電流開關比，但新材料易受製程中氧分佈不均勻影響，造成電性上穩定性不佳進而影響面板顯示的品質，本論文藉由新材料IGZO鍍膜機台(物理氣相沉積)進行各項參數實驗，最後經提供氧氣之管路改造，使氧氣於鍍膜時均勻分佈於腔體內，經由實驗得到較佳的電性均一性。
由實驗結果將氧氣流量管路改造後，原先單一68*88cm大基板上9點IV Curve均一性表現分散，改善前關鍵指標臨界電壓差ΔVth大於5V，對策改善後臨界電壓差ΔVth電性變化量可小於2V，除均一性得到顯著改善也驗證氧流量分布對於元件開關特性影響的重要性，並且得到較佳面板顯示品質。 | zh_TW |
| dc.description.abstract | In this thesis, our background is mainly in (Amorphous silicon) a-Si TFT LCD technology and base in it’s manufacturing equipment, We change semiconductor material a-Si to Metal Oxide. In this paper, we used IGZO (Abbreviation: Indium Gallium Zinc Oxide ) to replace the original semiconductor material of a-Si, new semiconductor material that offers better electron mobility, high current switching ratio, but in the manufacturing process, new materials susceptible by uneven distribution of oxygen, causing poor electrical stability ,thereby affecting the quality of the display, so we experimented and adjusted the parameters of the IGZO coating machine of PVD(Abbreviation: Physical Vapor Deposition). Finally, we transform pipeline of supplying oxygen, the oxygen gas in the chamber can be evenly distributed. We gain better electrical uniformity by final experiment.
After we transformed oxygen pipeline, the results of electrical characteristic of IV curve which is on the large substrate(68*88cm) of 9 point is uniform. The key indicators is ΔVth(Abbreviation: Threshold Voltage). Before improvement, ΔVth greater than 5V, after improvement ΔVth may be less than 2V. In addition we obtain uniformity, we also lighting the panel and get better quality. | en_US |
| DC.subject | 非晶矽 | zh_TW |
| DC.subject | 氧化銦鎵鋅 | zh_TW |
| DC.subject | 氧氣管路 | zh_TW |
| DC.subject | 物理氣相沉積 | zh_TW |
| DC.subject | 臨界電壓 | zh_TW |
| DC.subject | Amorphous silicon | en_US |
| DC.subject | Indium Gallium Zinc Oxide | en_US |
| DC.subject | O2 pipeline | en_US |
| DC.subject | Physical Vapor Deposition | en_US |
| DC.subject | Threshold Voltage | en_US |
| DC.title | 藉由IGZO成膜設備提升a-IGZO TFT薄膜電晶體電性穩定性 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Improvement of electrical stability of a-IGZO Thin Film Transistor by the deposit equipment of IGZO | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |