博碩士論文 102324027 完整後設資料紀錄

DC 欄位 語言
DC.contributor化學工程與材料工程學系zh_TW
DC.creator黃怡雯zh_TW
DC.creatorYi-Wen Huangen_US
dc.date.accessioned2015-6-11T07:39:07Z
dc.date.available2015-6-11T07:39:07Z
dc.date.issued2015
dc.identifier.urihttp://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=102324027
dc.contributor.department化學工程與材料工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract本研究是將市售的石墨片以電解剝落法製備微奈米級的石墨/石墨烯,再藉由電泳沉積法製備石墨烯薄膜於不鏽鋼片上。電泳沉積藉由電解剝落法所得到的氧化石墨/石墨烯奈米粒子因表面所帶的負電而穩定懸浮於溶液中,在經由施加一電場後使之沉積在正電極而形成薄膜。實驗中經由電解剝落法中的電解液選擇、粒子粒徑大小的過濾及電壓大小的調控得到一細緻且平整之石墨烯薄膜,其厚度約為1μm。另外本實驗也以蒸發沉積法將石墨烯粒子沉積在非導電基材上,並且可藉此方式形成一可撓式石墨烯薄膜。實驗中利用兩種方式還原薄膜,分別是真空還原及酒精還原,前者將薄膜置於真空中加熱至100℃一小時,後者將薄膜置於220℃酒精蒸氣中使其還原;還原薄膜以接觸角量測儀分析,其接觸角由38°提升至83°,實驗中也以XPS、TGA、XRD、Raman儀器鑑定顯示所製備的石墨烯薄膜已達到部分還原的效果,並且由酒精還原之石墨烯薄膜還原效果最好。最後經由四點探針量測還原後薄膜電阻率可達9×10^(-4) Ω∙cm。   zh_TW
dc.description.abstractThe graphene oxide nanoparticles obtained from anodic graphite by electrochemical exfoliation, followed by electrophoretic deposition onto stainless steel or nickel substract. Another way to deposit graphene particles on non-conductive substract is used to produce graphene film, which named Evaporative Deposition(ED). By ED, graphene films can be deposit on polymer substracts like PEN and formed a flexible graphene film. The graphite film formed was reduced in two ways, vacuum treatment with heating up to 100℃ and ethanol treatment with heating up to 220℃. The wetting properties are determined by contact angle measurement. The advancing and receding contact angles of graphene oxide film are 38.4° and 15.5o, respectively. This result reveals the thin film is rather hydrophilic. After the reduction treatment, the advancing and receding contact angle increased to 83.1° and 50.5°, respectively, indicating that the surface of graphene oxide film becomes more hydrophobic. By the analysis of TGA, Raman, XRD and XPS, the results proved that both of the reduction treatment had attained a reduction effect. After the reduction, a graphene film was obtained and the resistivity of the film is 9×10^(-4) Ω∙cm.en_US
DC.subject石墨烯zh_TW
DC.subject還原zh_TW
DC.subjectGrapheneen_US
DC.subjectReductionen_US
DC.title低溫還原氧化石墨烯薄膜zh_TW
dc.language.isozh-TWzh-TW
DC.titleLow-Temperature Reduction of Thin Graphene Oxide Filmen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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