| dc.description.abstract | In recent years, three-dimensional integrated circuit (3D IC) has been
agreed as the next generation semiconductor technology with the
advantages of small form factor, high-performance, low power
consumption, and high density integration. In the 3 type bonding
technology: chip-to-chip, chip-to-wafer, and wafer-to-wafer.,
wafer-to-wafer technology can be applied for homogeneous integration of
high yielding devices and plays important role in productive efficiency of
3D IC. However, wafer-to-wafer bonding technology also has the
advantages in Thin-GaN LED: (1) uniform current spreading and (2) high
emitting area. Therefore, wafer-to-wafer technology will be important
technology in the future.
In wafer-to-wafer technology, solid/solid metal bonding has the
property that bonding can be finished at low temperature (150~250℃). It
will be important for future development: (1) Prevent the formation of
intermediary metal compounds (IMC) at bonding interface, (2) Avoid the
residual stress which produced by CTE mismatch in high temperature
process. Compare with Cu-Cu direct bonding, we find that Cu-Pd-Cu
bonding can be finished at lower bonding temperature. Importantly,
external stress can reduce the finished bonding temperature, which be
attributed to reduced energy barrier in solid state interdiffusion. Therefore,
base on the concepts of successful atom-vacancy diffusion’s probability
in Boltzmann distribution, the important factor in the difference between
Cu(111)-Pd and Cu(200)-Pd with external stress will be discussed. | en_US |