| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 黃敏綺 | zh_TW |
| DC.creator | Min-Chi Huang | en_US |
| dc.date.accessioned | 2015-6-30T07:39:07Z | |
| dc.date.available | 2015-6-30T07:39:07Z | |
| dc.date.issued | 2015 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=102521036 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在模擬特殊結構元件時，以微積分觀念，我們通常會將其不規則或圓弧設計處切割更細更密，使數值網格能更貼近且佈滿整塊模擬區域，並延伸節點掃描概念，發展出以區域掃描的方式完成等效電路的模擬，然而我們發現切割加密後，多出的節點會對於模擬結果造成極大誤差，因此於此論文中，我們深入探討誤差發生原因，開發出以三塊直角三角形網格做為漸變層以修正誤差，再以簡單電阻驗證無誤後，應用於不均勻電場中電流深度量測與pn二極體，並與規則分割方式比較精準度與模擬效率。 | zh_TW |
| dc.description.abstract | For simulation of semiconductor device with special structure , we usually partition irregular region into smaller pieces to make an appropriate grid to provide a reasonable approximation of geometry. However, additional node caused by incorrect area-partition will result in unpredictable errors. In this thesis, we develop a transition layer with three right-angled triangle meshes. For verification , a simple resistor will be simulated and compared to the theoretical value. Finally, we apply this transition layer to simulate the current density profile in different depths for a resistor , and to simulate PN junction characteristics. | en_US |
| DC.subject | 二維半導體模擬 | zh_TW |
| DC.subject | 直角三角形網格模組 | zh_TW |
| DC.subject | 2-D Semiconductor Device Simulation | en_US |
| DC.subject | Right Rectangle grid model | en_US |
| DC.title | 區塊劃分的缺失 於二維半導體元件模擬之探討 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Area-Partition Problems in 2-D Semiconductor Device Simulation | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |