博碩士論文 103329008 完整後設資料紀錄

DC 欄位 語言
DC.contributor材料科學與工程研究所zh_TW
DC.creator蔣明勳zh_TW
DC.creatorMing-Xun Jiangen_US
dc.date.accessioned2016-8-31T07:39:07Z
dc.date.available2016-8-31T07:39:07Z
dc.date.issued2016
dc.identifier.urihttp://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=103329008
dc.contributor.department材料科學與工程研究所zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract自從工業革命後,人類社會大量使用石化燃料,除了造成許多汙染外,亦會產生太多無法直接利用的廢熱。熱電材料為一種熱能和電能彼此之間可以互相轉換的材料,我們希望以此將無法利用的廢熱轉化為可以使用的電能。近年來,許多研究指出低維度半導體材料和表面粗糙度可以增加熱電材料轉化效率的評估值(ZT值),因此我們選擇矽(silicon)這種與半導體產業高度相容的材料作為研究對象,將SOI wafer上之矽層以一系列半導體製程(黃光微影、蒸鍍、化學氣相沉積、反應性乾蝕刻……等)製備一量測矽奈米緞帶結構之熱電量測平台,可量測此結構之熱導率、電導率、席貝克係數。隨後量測鍍附矽鍺量子點之表面、選擇性濕蝕刻後之金字塔結構之表面製備的熱電量測微機電系統以探討表面奈米結構對熱電性質之影響。zh_TW
dc.description.abstractSince industrial revolution, the fossil fuels is widely used in human society. It produces much pollution and waste heat we can’t use. Thermoelectrical materials can transform the energy between heat and electric. We wish it can transform the waste heat to electrical force. In this year, there are many research indicate low-dimensional semiconductor material and surface roughness will increase the ZT value, which can evaluate the thermoelectric conversion efficiency. Therefore, we choose silicon which is highly compatible in semiconductor industry as our research object. After a series of semiconductor process (photolithography, evaporation, CVD, RIE……and so on), the silicon device layer on SOI wafer is batch-fabricated to the thermoelectrical measurement platform of silicon nanoribbon structure. It can measure the thermal conductivity, electrical conductivity, seebeck coefficient. Finally, We study the surface roughness in quantum dots surface and Pyramid structure surface for the thermoelectric property.en_US
DC.subject矽奈米緞帶結構zh_TW
DC.subject熱電量測平台zh_TW
DC.subject半導體製程zh_TW
DC.subject量子點zh_TW
DC.subjectsilicon nanoribbon structureen_US
DC.subjectthermoelectric measurement platformen_US
DC.subjectsemiconductor processen_US
DC.subjectquantum dotsen_US
DC.title矽基低維度熱電量測平台之製備與研究zh_TW
dc.language.isozh-TWzh-TW
DC.titleBatch fabrication and thermoelectrical Measurement of Si-based thermoelectric device in low dimensionen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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