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In recent years, MOCVD in the field of semiconductor manufacturing was widely used, and the current process LED and high-power components one of the key technologies. According to different types of film materials, i.e., single crystal, Polycrystalline and amorphous, and other epitaxial materials for the deposition process technology, the study first through the design of the physical visualization of vertical inlet chamber and the system equipment to improve the integration. The process parameters include the flow rate, pressure control system, the substrate high temperature (800℃) of the heater system and with the rotating platform speed to achieve high speed (800 rpm) in the experimental equipment. The flow field distribution in the reaction chamber is explored to make uniform inside the flow field by changing the different flow rate of single air inlet, chamber pressure, substrate temperature and rotating speed in the susceptor.
Visualization of the experiment flow into the alumina fluid particles. It obtain dynamic images by using the high-speed camera for the shooting with a laser gun, and then the velocity field analysis was used by the Particle Image Velocimetry (PIV) and MATLAB analysis software. From the experimental results and numerical simulations show that the flow form in four kinds of single air inlet has the effect of vertical jet flow on the impact of diversion, the thermal buoyancy effect of the high temperature substrate, the rotational inertial force effect produced by the rotation of the susceptor and the plug flow effect adjusted to the uniform flow field. Through the analyzed the change of the flow boundary layer on the surface of the susceptor and verified the influence of the process parameters on the eddy current of the flow field, it was found that the major factors were affected the rate of the epitaxy and uniformity.
The second part is designed by adding inlet diffusion system, the slit jet designs from the results that can effectively improve the inlet of a single inlet flow rate of the uneven distribution of the situation. The results show that the flow inside the chamber and the surface of the platform can achieve the uniform flow field, and it caused that the velocity distribution decreases as the radial direction increases. In addition, the numerical simulation method is used to establish the vertical intake model, and the MOCVD chemical reaction project is added to the multi-physical coupling to establish a set of calculation and analysis of the length and uniformity of the actual MOCVD. Through this study, the key components can be accumulated Ability and process parameters of the ratio of technology, and it was widely used in the semiconductor industry equipment development basis. | en_US |