dc.description.abstract | In this study, High-Power Impulse Magnetron Sputtering (HiPIMS) deposition Silicon Nitride (Si3N4) thin films on B270 glass substrate was investigated using Si semiconductor material as the target. Using high power pulsed magnetron sputtering, by adjusting the pulse interruption time and the capacitance energy storage module for pulse accumulation, then the electric energy is released, for can let the target atom has more powerful energy to sputtering onto the substrate, the thin films have enough energy and can increase thin films the adhesion and density.
The reason for choosing silicon material is that it can be used in optical industry to manufacture silicon nitride thin films on optical glass. The advantage of using silicon material in optical glass silicon nitride thin films are to increase the optical high penetration of glass, and it have high refraction effect.
In recent years, plasma processing technology is used in vacuum coating, luminescent properties and existing plasma glow under low vacuum state plasma generated inside the change of different characteristics, and these are all the electric properties of plasma, can be used Optical Emission Spectroscopy (OES) as the monitoring plasma.
The optical emission spectroscopy was used to diagnose the high power pulsed magnetron sputtering plasma at the beginning of the research. In the process of study, it combines the plasma spectrum software with the fixed power of 600w, the argon flow rate of 27sccm, the start working time Ton=50μs, and then uses different pulse energy storage time Toff=200μs and Toff=900μs and different nitrogen flow rate, to detect the spectral intensity changes of elements in plasma, and to know the spectral intensity at the wavelength position, It can be combined with the database software to do more complete analysis of the plasma ionization phenomenon, and the flow rate of nitrogen can be predicted by the phenomenon, to produce the silicon nitride thin films. Final study, the optical properties of the thin films were analyzed for the silicon nitride thin films, including the transmittance (T%), refractive index (n) and extinction coefficient (k) and were discussed under what kind of pulse energy storage time Toff=200μs and Toff=900μs and different nitrogen flow rate, and its transmittance (T%), refractive index (n) and extinction coefficient (k) were the best.
The research results in the best pulse energy storage time was Toff=900μs, the nitrogen flow rate was 20sccm, the transmittance(T%) was 91.76%, the refractive index (n) was 2.04, the minimum extinction coefficient (k) was 0, successfully coated with high refractive index no absorption of uniform silicon nitride optical thin films. | en_US |