| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 吳奇韋 | zh_TW |
| DC.creator | Chi-Wei Wu | en_US |
| dc.date.accessioned | 2017-9-28T07:39:07Z | |
| dc.date.available | 2017-9-28T07:39:07Z | |
| dc.date.issued | 2017 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=104521006 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 近年來，人們對於電子產品的隨身攜帶性要求愈來愈高，電子元件的微縮顯得日益重要，元件朝著輕、薄、透明成了一種未來的趨勢，由於現階段的透明導電薄膜仍存在著一些缺點，開發新的材料成了一項重要的課題。
本論文將著重於p-type氧化鋅靶材的製備及對其濺鍍出之薄膜進行探討，並同時開發新的p-type導電材料，如三氧化二鉻及硫化銅，利用摻雜燒結的方式提升塊材特性，並進行量測分析，期望以本實驗之結果對開發新型p-type導電材料做出貢獻。
? | zh_TW |
| dc.description.abstract |
In recent years, wearable electronics has brought a lot of attentions due to its potential applications and advantages of miniature, light weight, and transparency. However, there were still many problems in common transparent thin film. Therefore, it is stringent for the research of new materials.
This study focuses on the preparation of p-type zinc oxide target and thin film, as well as the development of other new conductive materials, including chrome trioxide and copper sulfide. Several doping species and process was conducted and the analysis on the materials properties was carried out for thorough study. | en_US |
| DC.subject | P型金屬氧化物與硫化物之研究 | zh_TW |
| DC.title | P型金屬氧化物與硫化物之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | P-type metal oxide and sulfide | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |