| DC 欄位 |
值 |
語言 |
| DC.contributor | 化學工程與材料工程學系 | zh_TW |
| DC.creator | 羅憲綸 | zh_TW |
| DC.creator | Xian-Lun Luo | en_US |
| dc.date.accessioned | 2018-8-1T07:39:07Z | |
| dc.date.available | 2018-8-1T07:39:07Z | |
| dc.date.issued | 2018 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=105324004 | |
| dc.contributor.department | 化學工程與材料工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 有機場效應電晶體(Organic field-effect transistor，OFET)是一種利用有機半導體組成通道的場效應電晶體。OFET 在近年來一直是熱門的研究主題之一，尤其是在軟性電子領域，基於具有低溫製程、低廉成本、延展性、大面積製作、製程簡單及分子可設計性等優點，使其不論在設計的彈性或應用的空間上，都比無機材料矽基板大，未來將成為軟性電子的主流。本論文利用可溶性有機小分子透過剪切力塗佈法製作高性能場效應電晶體。以接上側鏈增加溶解度之三並環?吩(3,5-bis(decylthio)dithieno[3,2-b:2′,3′-d]thiophene，DSDTT)為核心，並在核心兩側接上三種不同數目並環?吩構成之次要結構:(1) 2,6-di(thiophen-2yl) DT (2)2,6-di(thieno[3,2-b]-
thiophen-2yl) DTT (3)2,6-di(dithieno[3,2-b;2’,3’-d]-thiophen-2yl) DDTT，來合成實驗中使用的 DSDTT 系列 p 型有機小分子半導體材料(DT-DSDTT、DTT-DSDTT、DDTT-DSDTT)。
透過剪切力塗佈法之溶液製程，由 DSDTT 系列分子所製成之場效應
電晶體隨著結構上總並環?吩數目增加，其載子遷移率從 DT-DSDTT 的
10 -5 cm 2 V -1 s -1 ，增加至 DDTT-DSDTT 的 2.6 cm 2 V -1 s -1 ；從紫外光-可見光吸收光譜、原子力顯微鏡表面形貌分析與低掠角 X 光繞射進行有機半導體薄膜之分析，可以觀察到透過增加次結構之並環?吩數目，使材料有著更明顯的分子間作用力，也藉由側鏈上之硫與次結構上之硫(S-S)作用力，使整個分子結構呈現共平面，伴隨剪切力塗佈法降低排列時分子間不共平面所造成之負面影響，形成更有序之分子排列。此研究成功利用可溶液製程之簡單有機小分子製作出高載子遷移率場效應電晶體。 | zh_TW |
| dc.description.abstract | Three new organic small molecule semiconductors with alkyl chain-substituted 3,5-bis(decylthio)dithieno[3,2-b:2′,3′-d]thiophene (DSDTT) as the central core and both ends capped with thiophene (DT-DSDTT), thieno-thiophene (DTT-DSDTT) and dithienothiophene (DDTT-DSDTT) have been
synthesized and characterized for organic field effect transistor (OFET) applications.
Single crystal and molecular orbital computations indicate that the DSDTT core is completely planar, likely via S(Alkyl) ? S(DTT) intra-molecular locks. Thin film and charge transport properties are analyzed by optical microscopy (OM), atomic force microscopy (AFM), UV-Vis absorption spectroscopy and grazing incidence X-ray diffraction (GIXRD) experiments. The OFET through
solution-sheared DDTT-DSDTT displays the highest hole mobility of up to 2.6 cm 2 V -1 s -1 and a ON/OFF current ratio (I ON /I OFF ) greater than 10 5 . These results can prove that molecules with S ? S intramolecular locks have excellent mobility
performance. Solution shearing method also offers a good manufacturing process. This research outcome can help organic molecular design and improve OFET performance in the future work. | en_US |
| DC.subject | 有機場效應電晶體 | zh_TW |
| DC.subject | 剪切力塗佈法 | zh_TW |
| DC.subject | 溶液製程 | zh_TW |
| DC.subject | 有機小分子 | zh_TW |
| DC.title | 以含硫碳鏈並?吩環小分子半導體材料利用溶液剪切力塗佈法製作高性能有機場效應電晶體 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | 3,5-bis(decylthio)dithieno[3,2-b:2′,3′-d]thiophene (DSDTT)-Based Small Molecules for High-Performance Organic Field Effect Transistors (OFET) by Solution Shearing Method | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |