博碩士論文 105521001 完整後設資料紀錄

DC 欄位 語言
DC.contributor電機工程學系zh_TW
DC.creator黃謙羽zh_TW
DC.creatorChien-Yu Huangen_US
dc.date.accessioned2018-7-9T07:39:07Z
dc.date.available2018-7-9T07:39:07Z
dc.date.issued2018
dc.identifier.urihttp://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=105521001
dc.contributor.department電機工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract本論文探討量子點奈米線系統ZT值在室溫下的優化。我們考慮的系統為量子點奈米線和金屬電極的接面系統,該系統可以利用量子力學的二次量化算符來建構,除此之外,系統的熱電係數可以利用格林函數來計算。我們發現在室溫k_B T=25meV,且量子點能階和電極費米能階差Δ=60meV時,可以得到最佳化的功率因子。這優化條件在電子躍遷強度與溫度的比值,滿足t_c⁄(k_B T)≤0.5的情況,且和量子點的數量無關,也就是說,PF和奈米線長度幾乎無關。在量子點間的強躍遷強度(即弱的電子庫倫力)情況,我們可以在奈米線直徑D=3nm的條件下,得到室溫k_B T=25meV,ZT>3。zh_TW
dc.description.abstractThis thesis investigates the optimization of figure of merit of quantum dot nanowire junction system connected to metallic electrodes at room temperature. The Anderson model is used to simulate the system Hamiltonian. The thermoelectric coefficients are calculated in the framework of Green’s functions. We have obtained the maximum power factors at room temperature when Δ/k_B T=2.4 and Γ=2t_c, where Δ=E_0-E_F is the energy difference between the QD energy levels and Fermi energy of electrodes. Γ and t_c denote, respectively, the electron tunneling rates and hopping strengths. We note that power factor is almost independent on the QD numbers. ZT>3 can be achieved for a Si/Ge QD superlattice nanowire with diameter D=3nm.en_US
DC.subject量子點zh_TW
DC.subject奈米線zh_TW
DC.subjectZTzh_TW
DC.subject室溫zh_TW
DC.subjectQuantum doten_US
DC.subjectnanowireen_US
DC.subjectZTen_US
DC.subjectroom temperatureen_US
DC.title量子點奈米線在室溫下之ZT值優化zh_TW
dc.language.isozh-TWzh-TW
DC.titleOptimizing thermoelectric efficiency of quantum dot nanowires at room temperatureen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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