| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 王麗棠 | zh_TW |
| DC.creator | Li-Tang Wang | en_US |
| dc.date.accessioned | 2018-7-26T07:39:07Z | |
| dc.date.available | 2018-7-26T07:39:07Z | |
| dc.date.issued | 2018 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=105521010 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在本篇論文中，我們使用C語言，建立一套可以精確模擬半導體元件之網格，其為增點式立方體網格。我們發現在傳統立方體網格在不同接面方向上會造成誤差，為此我們設計此一新的網格。接著使用簡易電阻做理論計算，並與模擬值結果比較來驗證，確認此新式網格的可行性。最後，將增點式網格應用在二極體、圓弧接面及內含氧化區塊之半導體，並將這些應用做理論的推導與程式模擬結果做比較分析，所有模擬證實此增點式網格的可靠度。 | zh_TW |
| dc.description.abstract | In this thesis, we use C language to develop a new point-added cube element for 3D device simulation. We found that the traditional cube element cause errors due to the low accuracy. For this reason we design a point-added cube element. We compared the traditional cube element with the point-added cube element. A simple resistor will be used to verify our result with theoretical value. Finally, we applied the point-added cube element to PN diodes and 3D semiconductor including an internal oxide block. The simulation results match the theoretical derivation. | en_US |
| DC.subject | 增點式立方體網格開發 | zh_TW |
| DC.subject | 導體元件模擬 | zh_TW |
| DC.title | 增點式立方體網格開發及其在三維半導體元件模擬 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Development of point-added cube element and its application to Semiconductor Device Simulation | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |