| dc.description.abstract | In this thesis, design of several C/Ku bands low noise amplifiers (LNAs) and power amplifiers (PAs) are presentd. A Ku-band three-stage cascode LNA using TSMC 0.18 μm CMOS process is presented in Chapter 2. The cascode CMOS LNA exhibits a 22.4-dB gain, 3-dB bandwidth from 11 to 19 GHz, a minimum noise figure of 4 dB at 15 GHz. The chip size of the three-stage LNA is 0.84 x 0.8 mm2. A broadband LNA is designed using common-source (CS) topology to reduce dc power consumption, and the circuit is fabricated in 0.15 μm GaAs process provided by WIN Semiconductors Corporation. The three-stage GaAs LNA exhibits a 28-dB gain, 3-dB bandwidth from 4 to 16 GHz, a minimum noise figure of 2 dB at 10 GHz. The chip size of the three-stage LNA is 2 x 1 mm2.
In Chapter 3, a Ka-band binary-combined power amplifier using WIN 0.1 μm GaAs procss is presented. The first stage uses a resistor-capacitor network to improve stability. The second stage combines 4 FETs with a total gate periphery of 800 μm. The stability analysis is summarized, including K factor, interstage stability, non-linear stability, and odd mode stability after adding the odd-mode suppression resistors . The PA exhibits a 10-dB gain, 3 dB bandwidth from 30 to 43 GHz , an output 1-dB compression point of 24.6 dBm, and a saturation output power of 26-dBm. The chip size of the PA is 2 x 1 mm2.
A CMOS stacked PA is presented in Chapter 4. The first stage uses a stacked structure as the gain unit to increase the gain performance, and the second stage combines two power units of stacked structure in parallel to achieve higher output power. In order to further improve the broadband gain frequency response with high output power, the T-model matching network is employed in the matching network of the PA. The stacked PA exhibits 10.3-dB gain, 3-dB bandwidth from 30 to 48 GHz, an output 1-dB compression point of 14 dBm, and a saturation output power of 16-dBm. The DC power comsumption is 765 mW. The chip size of the PA is 0.88 x 0.84 mm2.
Finally, design of the Ka-band GaAs diode mixer is presentd, the mixer has 3 dB bandwidth between 25 GHz and 50 GHz with a center frequency of 38 GHz. The diode mixer shows up to a conversion gain of -6-dB with a 10-dBm local oscillation (LO) driving power, without DC power consumption. The chip size of the mixer is 1 x 1 mm2. The mixer is further integrated with a 4-stage LNA to lower noise figure for some Ka-band receiving applications. The integrated front-end circuit shows a 31-dB conversion gain with a 10 dBm LO driving power, 2-dB noise figure and an output 1 dB gain compression point is -6 dBm. The chip size of the front- end circuit is 3 x 1.5 mm2.
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