DC 欄位 |
值 |
語言 |
DC.contributor | 化學工程與材料工程學系 | zh_TW |
DC.creator | 林珈琪 | zh_TW |
DC.creator | Chia-Chi LIN | en_US |
dc.date.accessioned | 2018-8-2T07:39:07Z | |
dc.date.available | 2018-8-2T07:39:07Z | |
dc.date.issued | 2018 | |
dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=106324048 | |
dc.contributor.department | 化學工程與材料工程學系 | zh_TW |
DC.description | 國立中央大學 | zh_TW |
DC.description | National Central University | en_US |
dc.description.abstract | 本研究利用溶液製程並透過剪切力塗佈法製作有機薄膜電晶體元件,主要研究於有機薄膜層,由於之前實驗室製作含硫碳鏈之p-type有機小分子材料SBT,有機薄膜元件電性達1.7 cm2V-1s-1。本研究將硒取代硫原子運用不同鍊長的含硒碳鏈之聯?吩(selenylated bithiophene; SeBT)為核心,核心頭尾兩端接上三併環?吩(2,6-di(dithieno[3,2-b;2’,3’-d]-thiophen-2yl; DDTT)為主軸,合成本研究使用得P-type有機小分子半導體材料DDTT-SeBT-C6、DDTT-SeBT-C10及DDTT-SeBT-C14。
隨著含硒碳鏈長的增加,載子遷移率從DDTT-SeBT-C6 0.09 cm2V-1s-1,增加至DDTT-SeBT-C10 0.06 cm2V-1s-1,再增加至DDTT-SeBT-C14 4.01 cm2V-1s-1,並利用光學顯微鏡、原子力顯微鏡等儀器分析其表面形貌。其中,DDTT-SeBT-C6薄膜呈現不連續狀,DDTT-SeBT-C10從GIXRD可發現結晶性不佳,所以造成電性不佳,反之,DDTT-SeBT-C14表面形貌呈現連續性且結晶性佳,得到優異的電性表現載子遷移率4.01 cm2V-1s-1,我們利用單晶可知,當側鍊較長時,可改善主軸扭轉角使分子呈平面性提高載子遷移率。 | zh_TW |
dc.description.abstract | This study research new small molecule semiconductors via solution shearing manufacture organic thin film transistors. Owing to the previous work thio-alkyl substituted bithiophene (SBT), the organic thin film transistor electrical properties is 1.7 cm2V-1s-1. The series of new small molecules is selenylated bithiophene with different alkyl side chains. Then, add 2,6-di(dithieno[3,2-b;2’,3’-d]-thiophen-2yl (DDTT) to become the main backbone on the both side of the core.
As the carbon length increase, the carrier mobility increases from DDTT-SeBT-C6 0.09 cm2V-1s-1 to DDTT-SeBT-C14 4.01 cm2V-1s-1. The surface morphology was analyzed by optical microscopy, atomic force microscopy, grazing incidence x-ray diffraction, UV-vis spectrophotometer. In these three molecules, the morphology of DDTT-SeBT-C6 is discontinuity. The crystallinity of DDTT-SeBT-C10 is worse. That the reason why they get the poor electrical properties. However, the morphology of DDTT-SeBT-C14 is continuity and the high crystallinity. When the side length increase, the torsion angle can be improved to make the backbone planar to improve the carrier mobility. | en_US |
DC.subject | 溶液製程 | zh_TW |
DC.subject | 剪切力塗佈 | zh_TW |
DC.subject | 有機小分子半導體材料 | zh_TW |
DC.subject | 有機薄膜電晶體 | zh_TW |
DC.subject | OTFT | en_US |
DC.subject | solution shearing | en_US |
DC.subject | organic small molecule semiconductor | en_US |
DC.title | 剪切力溶液製程應用於高效能有機薄膜電晶體:含硒碳鏈聯?吩小分子半導體材料 | zh_TW |
dc.language.iso | zh-TW | zh-TW |
DC.title | Selenium-Alkyl Bithiophene(SeBT)-Based Small Molecular Semiconductors via Solution Sheared Method for High-Performance Organic Thin-Film Transistors | en_US |
DC.type | 博碩士論文 | zh_TW |
DC.type | thesis | en_US |
DC.publisher | National Central University | en_US |