| DC 欄位 |
值 |
語言 |
| DC.contributor | 材料科學與工程研究所 | zh_TW |
| DC.creator | 吳季倫 | zh_TW |
| DC.creator | Chi-Lun Wu | en_US |
| dc.date.accessioned | 2020-8-20T07:39:07Z | |
| dc.date.available | 2020-8-20T07:39:07Z | |
| dc.date.issued | 2020 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=106329014 | |
| dc.contributor.department | 材料科學與工程研究所 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 氮化鋁鎵/氮化鎵高電子遷移率電晶體 (high electron mobility transistors, HEMTs) 由於具有高載子密度與遷移率之二維電子氣 (two-dimensional electron gas, 2DEG)，因此極具潛力成為下一代高頻電子及高功率電晶體之主流材料。為了製作出高效率HEMT元件，低特徵接觸電阻 (specific contact resistance, ρc) 與良好熱穩定之歐姆接觸電極是必須達成的技術指標。此外為了與矽基功率元件競爭並降低其製作成本，開發以互補式金氧半導體 (complementary metal-oxide-semiconductor) 標準製程製造AlGaN/GaN HEMTs於矽晶圓上成為近幾年來國學研單位的研究重點。
本實驗將先探討不同鈦鋁原子比在快速熱退火處理後之電性和表面形態之影響，並研究開發加入鑭 (Lanthanum) 金屬薄膜於歐姆接觸電極中，藉由調控其他金屬層材料厚度，配合適當的退火溫度與氛圍和鑭金屬的使用下，可大幅降低特徵接觸電阻，使鈦/鋁/鑭/銅歐姆接觸可得到低特徵接觸電阻為6.4×10-6 ohm-cm2，與傳統鈦/鋁/鎳/金接觸相比為2.9×10-5 ohm-cm2。表面形態與傳統鈦/鋁/鎳/金、鈦/鋁/鎳/銅和鈦/鋁/銅歐姆接觸金屬比較，得到較為平坦之金屬表面。 | zh_TW |
| dc.description.abstract | AlGaN/GaN high electron mobility transistors (HEMTs) have been considered as a promising candidate for radio frequency/microwave and power electronics applications because of its high mobility and density of two-dimensional electron gas (2DEG) at the hetero-interface. In order to fabricate high efficiency HEMT devices, ohmic contacts with low specific contact resistance and high thermal stability are necessary. In order to compete with Si-based power devices and lower manufacturing cost, it is desired for AlGaN/GaN HEMTs fabricated on Si wafers with standard CMOS processes. Therefore, Au-free ohmic contacts have recently drawn considerable attention.
In this experiment, we first investigate the influence of different Ti/Al atomic ratios on specific contact resistance and surface morphology after thermal annealing and develop using Lanthanum thin film in ohmic contact. By optimizing the thickness of other metal layers and annealing temperature and the thickness of Lanthanum, we can obtain a low specific contact resistance of 6.4×10-6 ohm-cm2 by using Ti/Al/La/Cu ohmic contacts comparing to 2.9×10-5 ohm-cm2 by using Ti/Al/Ni/Au ohmic contacts. The surface morphology is compared with traditional Ti/Al/Ni/Au, Ti/Al/Ni/Cu and Ti/Al/Cu ohmic contacts, we can acquire a much smoother surface. | en_US |
| DC.subject | 氮化鋁鎵/氮化鎵異質結構 | zh_TW |
| DC.subject | 歐姆接觸 | zh_TW |
| DC.subject | 特徵接觸電阻 | zh_TW |
| DC.subject | 高電子遷移率電晶體 | zh_TW |
| DC.subject | 二維電子氣 | zh_TW |
| DC.subject | AlGaN/GaN heterostructures | en_US |
| DC.subject | ohmic contacts | en_US |
| DC.subject | specific contact resistance | en_US |
| DC.subject | high electron mobility transistors | en_US |
| DC.subject | two-dimensional electron gas | en_US |
| DC.title | 鑭金屬薄膜應用於氮化鋁鎵/氮化鎵元件之歐姆接觸特性研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | The Role of Lanthanum on Ohmic Contacts to AlGaN/GaN High Electron Mobility Transistors | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |