| dc.description.abstract | This thesis studies the integration of inorganic zinc oxide transistors and
organic light-emitting diodes (OLED) to produce high-efficiency vertical light-
emitting transistors. The zinc oxide transistor is a top-contact/bottom-gate
structure, and transparent conductive film (ITO) is used as gate in sequence, and
then aluminum oxide and hafnium oxide are deposited by atomic layer
deposition(ALD) as a double dielectric layer with high dielectric constant and N-
type zinc oxide semiconductor layer, and then using the double-layer structure of
LOR and photoresist by photolithography, the insulating layer is coated with
silicon oxide to cover the silver source to suppress the off-state current, and finally
on the zinc oxide transistor stacked OLED, the anode of OLED is the drain above
the vertical transistor. This thesis studies two OLEDs to verify the versatility of
organic materials that can be stacked on vertical transistors which are spin-coated
polymer Super Yellow to produce yellow light OLED and vapor-deposit
phosphorescent molecules Ir(ppy)3 green light OLED. This thesis also uses the
Super Yellow light-emitting transistor as the framework to explore the influence
of designed comb-shaped source on the performance of the transistor to find the
optimal parameters of the source. Comparing the optimized vertical light-emitting
transistor with the standard OLED, it is found that the driving voltage, current
density, luminous intensity and efficiency are very close, which proves that the
integration of OLED on the zinc oxide transistor will not reduce the component
performance. Overal, both light-emitting transistors have low driving voltage
(<3V), high aperture ratio (>90%), high current density (50-100 mA/cm2), and
high current on/off ratio (104) . In addition, the light-emitting area of the transistor
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and the zinc oxide pattern are highly corresponding to each other, and the light is
uniform, showing that a large number of electrons can be conducted laterally in
the high-conductivity zinc oxide transistor for a distance of hundreds of microns
and then injected upwards into the OLED. Therefore, the luminous area can be
accurately defined through the zinc oxide pattern of optical lithography. | en_US |