博碩士論文 108226019 完整後設資料紀錄

DC 欄位 語言
DC.contributor光電科學與工程學系zh_TW
DC.creator賴昱凱zh_TW
DC.creatorYu-Kai Laien_US
dc.date.accessioned2021-7-26T07:39:07Z
dc.date.available2021-7-26T07:39:07Z
dc.date.issued2021
dc.identifier.urihttp://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=108226019
dc.contributor.department光電科學與工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract近年來有許多非晶氧化物半導體(amorphous oxide semiconductors ,AOS)的研究被應用在薄膜電晶體(thin-film transistors,TFT)的通道層,AOS與非晶矽(amorphous silicon,a-Si)或有機半導體TFT相比,具有高載子遷移率、良好的透明度、均勻性和適用於低溫製程的潛力,其中AOS又以氧化銦鎵鋅(IGZO)最為出名。 本論文的實驗可分成兩個部分來提高IGZO的電特性,分別為探討氧化銦鎵鋅IGZO製程溫度及Ti摻雜對於薄膜的影響,利用Hall量測儀分析在不同溫度環境下薄膜阻抗的改變,推測在高溫環境中能提供更多的能量,使薄膜在成長過程中減少缺陷並提升載子遷移率;降低氧氣流量可提升氧空缺,增加載子濃度。另外在Ti摻雜方面,利用XPS量測不同摻雜比例下,藉由陽離子In被Ti取代使載子濃度的提升並提升薄膜的載子遷移率。zh_TW
dc.description.abstractOver the last few years, amorphous oxide semiconductors (AOS) have been applied to the channel layer of thin-film transistors (TFT). AOS has the potential for high carrier mobility, good transparency, uniformity and low process temperature to compare with amorphous silicon (a-Si) or organic semiconductor TFT. And IGZO is one of the famous AOSs. In this research, there are two parts of experiments to improve the electrical properties of IGZO. They are the process temperature and the effect of Ti doping in the IGZO films. Hall analysis was applied to measure the resistance of the films in the different process temperature. The higher process temperature provided more energy to reduce the defects and increase the carrier mobility in the films. The less oxygen flow created more oxygen vacancy to increase the carrier concentration of the films. The effect of the different Ti doping in the IGZO film can be analyzed by using XPS measurement. By replaced cation In as cation Ti, the carrier concentration and the carrier mobility were increased.en_US
DC.subject磁控濺鍍zh_TW
DC.subject高載子遷移率zh_TW
DC.subject氧化銦鎵鋅zh_TW
DC.subjectIGZOen_US
DC.subjectHigh carrier mobilityen_US
DC.subjectthin filmsen_US
DC.title利用高功率脈衝磁控濺鍍高載子遷移率之氧化銦鎵鋅zh_TW
dc.language.isozh-TWzh-TW
DC.titleHigh carrier mobility of IGZO thin films by using high power impulse magnetron sputtering depositionen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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