| dc.description.abstract | Continuous Czochralski crystal growth (CCZ) is a single crystal silicon growth method modified from Czochralski crystal growth (CZ). Due to the additional structure of the partition, when the feed is continuously added, no unmelted feed will be mixed into the growing crystal. The heat and mass transfer during the growth process will be affected by the presence of partition. This study will analyze the influence of different crucible shapes, heaters, partition depth, crystal and crucible rotation rate on the conditions of the crystal growth method through numerical simulation.
The results show that the shallow crucible can better transfer heat to maintain the shape of the interface, so the total power is lower. And because the contact area with the melt is small, the generation of oxygen impurities can be reduced. In addition, the small gap under the partition can prevent part of the oxygen from entering the melt under the crystal, so the oxygen concentration at the interface decreases. Different heater designs will also affect the power. Moving the side heater down by 60mm can appropriately reduce power waste, and the power ratio (PR) of the side heater to the bottom heater is 0.24, which can reduce the total power. In order to further reduce the oxygen concentration, the depth of the partition is particularly important. The partition affects the source of oxygen impurities and the mass transfer of the melt. The simulation shows that as the depth of the partition deepens, the degree of the dominant oxygen concentration will also be different. Considering the interface deflection and temperature gradient for crystal quality, it is better to use a partition depth of 60mm. Different rotation rate will also affect the oxygen concentration. Although this model is very sensitive to rotation and cannot be adjusted significantly, the oxygen concentration will be the lowest when the crystal rotation rises to 4 rpm. If the crucible and the crystal are rotated in the same direction at this time, although the oxygen concentration will increase, the interface oxygen concentration distribution will be uniform and flat. | en_US |