| dc.description.abstract | This thesis mainly uses the Newton Raphson method and the element by element method to develop a new grounded equivalent circuit model, and then establishes the method of matrix coefficient verification from the circuit and simulates the semiconductor devices. From the work of the previous researchers, it is known that errors in the calculation often result in serious distortion of the final calculation data. Therefore, in order to effectively improve the debugging efficiency of the program, we have developed a matrix coefficient verification method. According to our calculations, if the verification method is successful, it will greatly improve the accuracy of our subsequent calculation data. In the grounded equivalent circuit model we developed, the readability of the program has been re-enhanced, and it can also perform more concise and efficient calculations when performing the matrix coefficient verification method. In this calculation, we also found that when the grounded equivalent circuit is used, the time required for the simulation will increase slightly, but it will significantly improve the efficiency of verification without affecting the calculated value. When the coefficient verification method is successful, we try to simulate the semiconductor devices. In this part, we will use the three-dimensional tetrahedron series connection to form the semiconductor structure for simulation. The simulated devices include series resistor, PN junction, NPN transistor, MOS capacitor. Finally, we will discuss the accuracy of the simulated data according to the characteristic curve of each devices, and all have satisfactory results. | en_US |