| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 張瓊文 | zh_TW |
| DC.creator | Chiung-Wen Chang | en_US |
| dc.date.accessioned | 2022-6-27T07:39:07Z | |
| dc.date.available | 2022-6-27T07:39:07Z | |
| dc.date.issued | 2022 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=108521072 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文分別使用tsmc^TM 0.18 μm CMOS、穩懋WINTM 0.15-µm GaAs與0.25-µm GaN三種製程，設計同為操作於n79頻段之J類功率放大器。第二章會先探討n79頻段J類功率放大器，此架構會於之後章節，分別實現在三種不同製程之電路。
第三章提出應用tsmc^TM 0.18 μm CMOS製程於n79頻帶之J類功率放大器，電路設計採全積體化之兩層堆疊電晶體結構，量測結果為3-dB頻寬為3.0-5.8 GHz，在n79頻帶內，飽和效率皆大於35%，最大傳輸增益為14.06 dB，飽和輸出功率為20.13 dBm，1-dB 增益壓縮點輸出功率為17.06 dBm，晶片面積為1.2 (1.097 × 1.094) mm2。
第四章提出應用WINTM 0.15-µm GaAs製程於n79頻帶之J類功率放大器，電路設計採全積體化之兩級共源極電路架構，量測結果為3-dB頻寬為3.8 – 5.7GHz，在n79頻帶內，飽和效率皆大於35%，最大傳輸增益為25.42 dB，飽和輸出功率為23.43 dBm，1-dB 增益壓縮點輸出功率為22.34 dBm，晶片面積為1.5 (1.5 × 1.0) mm2。
第五章提出應用WINTM 0.25-µm GaN製程於n79頻帶之J類功率放大器，電路設計採全積體化之兩級共源極電路架構，量測結果為3-dB頻寬為3.1 – 5.3 GHz，在n79頻帶內，飽和效率皆大於40%，最大傳輸增益為24.56 dB，飽和輸出功率為38.33 dBm，1-dB 增益壓縮點輸出功率為25.16 dBm，晶片有效面積為3.57 (2.223 × 1.606) mm2。第六章為結論，並且比較三種製程各別之優缺點。 | zh_TW |
| dc.description.abstract | The thesis developed three Class J power amplifiers that were designed in tsmc^TM 0.18-µm CMOS, WINTM 0.15-µm GaAs, and WINTM 0.25-μm GaN all for n79-band operations. The second chapter will firstly discuss the n79 band class J power amplifier. This implemented topology in three different process will be addressed in the following chapters.
The third chapter proposes a class J power amplifier using tsmc^TM 0.18-μm CMOS process in n79 frequency band. The circuit design adopted a fully integrated two-stacked FET structure. The amplifier achieves a 3-dB bandwidth from 3.0 to 5.8 GHz with small signal gain of 14.06 dB, the peak power added efficiency (PAE) is higher than 35% in n79 band. Continuous Wave (CW) measurements demonstrate a maximum saturated output power of 20.13 dBm and an OP1dB of 17.06 dBm, respectively. The chip size is 1.2 (1.097 × 1.094) mm2.
The fourth chapter proposes a class J power amplifier using WINTM 0.15-µm GaAs process in n79 frequency band. The circuit design adopted a fully integrated two-stage common-source circuit structure. The amplifier achieves a 3-dB bandwidth from 3.8 to 5.7 GHz with small signal gain of 25.42 dB, the peak PAE is higher than 35% in n79 band. CW measurements demonstrate a maximum saturated output power of 23.43 dBm and an OP1dB of 22.34 dBm, respectively. The chip size is 1.5 (1.5 × 1.0) mm2.
The fifth chapter proposes a class J power amplifier using WINTM 0.25-μm GaN process in n79 frequency band. The circuit design adopts a fully integrated two-stage common-source circuit structure. The amplifier achieves a 3-dB bandwidth from 3.1 to 5.3 GHz with a small signal gain of 24.56 dB, the peak PAE is higher than 40% in n79 band. CW measurements demonstrate a maximum saturated output power of 38.33 dBm and an OP1dB of 25.16 dBm, respectively. The chip effective area is 3.57 (2.223 × 1.606) mm2. The fifth chapter proposes conclusions of the thesis. The advantages and disadvantages of these processes will be analyzed and discussed in the thesis. | en_US |
| DC.subject | n79頻段 | zh_TW |
| DC.subject | 互補式金屬氧化物半導體 | zh_TW |
| DC.subject | 砷化鎵 | zh_TW |
| DC.subject | 氮化鎵 | zh_TW |
| DC.subject | J類功率放大器 | zh_TW |
| DC.subject | 疊接式功率放大器 | zh_TW |
| DC.subject | 射頻發射機 | zh_TW |
| DC.subject | 記憶效應 | zh_TW |
| DC.subject | 鄰近通道功率 | zh_TW |
| DC.subject | 誤差向量振福 | zh_TW |
| DC.subject | 數位預失真 | zh_TW |
| DC.subject | 小型基地站 | zh_TW |
| DC.subject | 5G small cell | en_US |
| DC.subject | ACPR | en_US |
| DC.subject | Class-J power amplifier | en_US |
| DC.subject | stacked FET | en_US |
| DC.subject | n79 band | en_US |
| DC.subject | RF transmitter | en_US |
| DC.subject | GaN | en_US |
| DC.subject | GaAs | en_US |
| DC.subject | CMOS | en_US |
| DC.subject | EVM | en_US |
| DC.subject | memory effect | en_US |
| DC.subject | digital pre-distortion | en_US |
| DC.title | 以CMOS/GaAs/GaN製程實現之應用於n79頻段J類寬頻功率放大器 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Implementations on Class-J Wideband Power Amplifiers in CMOS/GaAs/GaN Technologies for n79 Band Applications | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |