| dc.description.abstract | The advent of the fth-generation mobile communication (5G) net-
work will provide greater data volume and higher.The transmission rate,
shorter latency (latency), and support for more communication device
connections.In order to achieve the vision of the next-generation mobile
communication system [1], whether in the physical layer, media access
control layer, network layer, or application layer all require more ad-
vanced technology.
In this paper, we will design power ampli ers in the sub-6 GHz and
millimeter wave frequency bands, respectively, using the WIN 0.25-µm
GaN HEMT (high electron mobility transistor) process and the WIN
0.15-µm GaAs pHEMT (pseudomorphic high electron mobility transis-
tor) process to achieve. In the second chapter of this paper, we use the
WIN 0.25-µm GaN HEMT process to design a 3.5-GHz class AB power
ampli er for 5G small-cell base stations, with an operating frequency
range of 3.3 GHz to 3.8 GHz. The measurement results show that the
small signal is within the operating frequency range of 3.33.8 GHz, the
gain and input return loss are greater than 10.2 dB and 12.6 dB, re-
spectively, and the large signal is at 3.5 GHz, OP1dB and OP1dB The
following PAE are 33.1 dBm (2W) and 44.4% respectively. The mea-
surement results are in line with the power ampli er performance target
of the active phased array at the transmitting end of the 5G small-cell
base stations.
In the third chapter of this paper, we also use the WIN 0.25-µm
GaN HEMT process to design a 3.5-GHz power combine ampli er for
5G small-cell base stations, with an operating frequency range of 3.3
GHz to 3.8 GHz and the debugging of the circuit in the previous chapter
optimizes this circuit. This circuit is composed of two single-stage power
ampli ers. The power divider and power combiner of the impedance
Wilkinson transforming structure are used for power combining. The
power divider and power combiner of impedance transforming Wilkinson
are Maded with o chip. It is realized by using FR4 high frequency two-
layer board, and nally connecting with the power ampli er by way
of pound wire. Since the o-chip impedance transforming Wilkinson
power divider and combiner have not been assembled and measured with
the circuit chip in this chapter, we will rst measure the single power
ampli er of this circuit. The measurement results show that the small
signal of the single power ampli er is within the operating frequency
range of 3.3-3.8 GHz. Its gain and input return loss are respectively
greater than 14 dB and 9.7 dB, and the large signal at 3.5 GHz, the
PAE under OP1dB and OP1dB are 24.8 dBm and 16.6%, we suspect
that it is caused by the overheating of the chip due to the large input
power during the measurement and the poor heat dissipation during
the measurement of the chip. The OP1dB and PAE are not as expected
ideal.
In the fourth chapter of this paper, we use the WIN 0.15-µm GaAs
pHEMT process to design a power ampli er applied in the 5G millimeter
wave frequency band with an operating frequency range of 37 GHz to
40 GHz. This circuit is of class-AB structure, and both the input and
output terminals use transmission lines for matching network. Because
it operates in the millimeter wave frequency band and the chip area is
limited, it is impossible to design drive PA, so we designed with the
main goal of increasing the gain. The measurement results show that
its small signal is in the 3740 GHz operating frequency range, its gain
and input return loss are greater than 6.3 dB and 2.2 dB, respectively,
and the output return loss is greater than 7.3 dB. When measuring large
signals, because the input power entered during the measurement does
not have an additional PA, the input power of IP1dB cannot be reached,
so OP1dB has not been measured yet. | en_US |