博碩士論文 109324051 完整後設資料紀錄

DC 欄位 語言
DC.contributor化學工程與材料工程學系zh_TW
DC.creator盧奕汝zh_TW
DC.creatorYi-Ru Luen_US
dc.date.accessioned2022-9-23T07:39:07Z
dc.date.available2022-9-23T07:39:07Z
dc.date.issued2022
dc.identifier.urihttp://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=109324051
dc.contributor.department化學工程與材料工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract地球上的能源越來越缺乏,加上環保意識的不斷提高,再生能源將是取之不盡且乾淨的能源,其中太陽能是一備受關注的再生能源。在眾多轉換再生能源的方法中,我們選用光催化反應的方式將太陽能轉換為化學形式儲存起來,且該製程的污染物和能耗相對較低,因此開發提高光催化反應之光觸媒極其重要。 通過簡便的溶劑熱法合成UiO-66-NH2@N-ZnIn2S4-S (UN-Xy@N-ZIS-S)異質結構,在光催化產氫反應中產生優異的性能,本研究利用氮摻雜與過量硫代乙醯胺,以及引入金屬有機骨架UiO-66-NH2,可以將形貌從2D奈米片轉變為2D奈米片構成之繡花球狀,同時過量的硫代乙醯胺能夠驅動ZnIn2S4與UiO-66-NH2更緊密接觸,使其均勻度提升從而減短電子與質子之間的反應距離,其中UiO-66-NH2的引入除了MOF本身多孔性結構外,異質結構的構成可以讓載流子移動順利,而能隙值從2.19 eV (ZnIn2S4)變寬至2.6 eV (UN-12030@N-ZIS-S),進一步降低電子-電洞再結合的狀況,變寬的能隙值會因為N的存在捕捉電洞,促進產氫效率的提升。為了減少反應成本,過程中沒有添加Pt,而本研究在常溫下使用光強度100 mW / cm2,光觸媒為UN-12030@N-ZIS-S進行反應,得到最佳產氫效率為2592 μmol/g/h。zh_TW
dc.description.abstractDue to the lack of energy on the earth and people’s awareness of environmental protection was enhanced. We have to find other alternative energy. While renewable energy will be inexhaustible and clean, among which solar energy is a renewable energy that has received much attention. We use the photocatalytic reaction to convert solar energy into chemical form for storage. The pollutants and energy consumption of this process are relatively low. Thus, it is extremely important to develop photocatalysts to improve photocatalytic reactions. In this study, N-doping and excess TAA, as well as the introduction of metal-organic framework UiO-66-NH2, can transform the morphology from 2D nanosheets to flowerlike nanospheres composed of 2D nanosheets. At the same time, excess TAA can drive ZIS and UiO-66-NH2 in intimate contact, which improves the uniform of the composite and shortens the reaction distance between electrons and protons. In addition to the porous structure of the MOF, the introduction of UiO-66-NH2 can boost the carriers to move, and the band gap change from 2.19 eV (ZnIn2S4) to 2.6 eV (UN-12030@NZIS-S). Further reducing the recombination of electrons and holes. The broad energy gap will trap holes due to the presence of N and promote hydrogen production efficiency. In order to reduce the reaction cost, no Pt was added to the reaction. The sample of UN-12030@N-ZIS-S has the best hydrogen production efficiency about 2592 μmol/g/h under 100 mW/cm2 of light intensity at room temperature.en_US
DC.subject光觸媒產氫zh_TW
DC.subject異質結構zh_TW
DC.subjectphotocatalyst hydrogen productionen_US
DC.subjectheterostructureen_US
DC.titleUiO-66-NH2@ZnIn2S4光觸媒光催化產氫之研究zh_TW
dc.language.isozh-TWzh-TW
DC.titleSolar Hydrogen Production using UiO-66- NH2@ZnIn2S4 Photocatalysten_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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