| dc.description.abstract | Hexagonal boron nitride (h-BN) is an excellent two-dimensional material renowned for its exceptional thermal conductivity, insulation properties, and wide bandgap. Among the limited insulating materials of two-dimensional substances, transferring high-quality h-BN between two-dimensional semiconductor materials and traditional dielectric materials holds the potential to improve defects caused by dangling bonds, thereby enhancing the electrical performance of electronic components.
Currently, the growth of h-BN thin films is mainly achieved through chemical vapor deposition on copper foils. However, the crystalline quality of h-BN is closely related to the surface properties of the copper substrate. Consequently, this study aims to investigate the differences in the low pressure chemical vapor deposition growth of h-BN by comparing copper foils with sputtered copper film substrates.
The research is divided into two main sections: the copper foil substrate and the copper film substrate. In the copper foil substrate section, the study explores the influence of annealing parameters on the surface, followed by an investigation into the effects of different precursor amounts, argon flow rates, precursor temperatures, and the substrate with/without hydrogen annealing. In the copper film substrate section, the study in examines the influence of sputtering parameters on the copper film and subsequently investigates the effects of different sapphire substrate pretreatment methods on both the copper film and h-BN growth.
Finally, this study concludes that under identical h-BN growth conditions, the crystalline proportion of h-BN grown on copper film substrates is higher than that grown on copper foils. This indicates that a smooth and single-crystal copper substrate can enhance the crystalline quality of h-BN, thereby facilitating the growth of high-quality h-BN thin films. | en_US |