| dc.description.abstract | With the advancement of technology, sp2-boron nitride (BN) film has been highly regarded as promising dielectric layer material due to the properties of no dangling bonds and wide bandgap. How to fabricate sp2-BN film on Si substrate with controllable thickness, uniformity, high quality, and flat surface is the core focus of this study.
To achieve uniform boron nitride film and prevent wrinkles, fractures, and metal ion contamination during the film transfer, the sp2-BN films were deposited onto Si (111) and SiO2 substrates directly. Raman spectroscopy confirmed the presence of the E2g peak of sp2-BN, TEM images showed horizontal alignment and the interlayer spacing is 0.34 nm and 0.33 nm, and XPS spectra confirmed a B:N ratio is 1.12:1 and 0.99:1, proving the successful synthesis of sp2-BN films. Additionally, we optimized the film surface roughness for MoS2 deposition by adjusting the carrier gas flow and deposition time.
Finally, MoS2 was deposited on the sp2-BN films. For MoS2 / sp2-BN / Si(111) layer structure, Raman spectroscopy confirmed the E2g and A1g peaks of MoS2. Many holes appeared on the surface of the substrate and there was no PL signal for the MoS2 film. It shows the MoS2 is not a good 2-D material. For MoS2 / sp2-BN / SiO2 layer structure, Raman spectroscopy confirmed the E2g and A1g peaks of MoS2. The PL spectrum had a FWHM of 0.12 eV, and TEM images confirmed the 2D material. MoS2 has been deposited on the sp2-BN film. It shows that sp2-BN film on SiO2 substrate is one of the suitable substrates for MoS2 deposition. | en_US |