| dc.description.abstract | CsPbBr3, a fully inorganic perovskite material, is a semiconductor with excellent properties. It has a tunable emission wavelength, controllable bandgap, and can be produced using simple and low-cost fabrication methods. Currently, it is widely used in solar cells, optoelectronic sensors, and light-emitting devices. In this study, we focus on the application of perovskite materials in light-emitting devices, analyzing and researching their performance. To meet future commercialization needs, we prepared uniform and large-area devices by using a single-source thermal evaporation method to fabricate perovskite thin films.
This study continues our lab′s research on CsPbBr3 perovskite green light-emitting devices. To improve the luminous efficiency, we explored the thickness of the CsPbBr3 emission layer and adjusted the annealing time to enhance the device′s performance. The results showed that with a film thickness of 350 nm and 100 minutes of annealing, we could achieve a high-brightness light-emitting device with a wavelength of 529 nm and brightness of 13,320 cd/m². Additionally, to address the issue of poor current spreading, we introduced a TPBi electron-blocking layer. This design resulted in a light-emitting device with a wavelength of 530 nm, brightness of 12,920 cd/m², and an improved current efficiency of 1.92 cd/A, compared to 1.3 cd/A in devices without TPBi. Further research showed that by replacing the carbon electrodes with silver in TPBi-based devices, we successfully produced a highly uniform light-emitting device with a wavelength of 529 nm and brightness of 11,067 cd/m². Moreover, by simply changing the electrode material, we could fabricate both normal and inverted structures of CsPbBr3 perovskite light-emitting devices without altering the process. | en_US |