| dc.description.abstract | This study utilizes 6-inch 4H-SiC wafer ingot as the research material and conducts experiments using a wire electrical discharge machine (WEDM). The Taguchi method is applied to optimize the parameters, including pulse-on time (TON), pulse-off time (TOFF), open circuit voltage (OV), and servo voltage (SV), to enhance the machining speed, surface roughness (Ra), and kerf loss of silicon carbide. Additionally, a particle tracking model is employed to simulate the accumulation of machining debris during the slicing of a 6-inch SiC wafer, and the simulation results are analyzed to assess the actual slicing performance.
Using the Taguchi method to machine 20 mm thick silicon carbide wafer ingot , it was found that pulse-on time has a significant impact on machining speed, surface roughness (Ra), and kerf loss. The longer the pulse-on time, the faster the machining speed; however, surface roughness (Ra) and kerf loss tend to worsen. After optimization, the maximum machining speed reached 1.623 mm/min.
The particle tracking model is used to analyze the accumulation of machining debris under different flushing pressures during the slicing process of 6-inch SiC wafers. The simulation results show that, under lower flushing pressure, debris remains in the machining area for 0.1 seconds before being discharged, whereas under higher flushing pressure, debris is discharged within 0.06 seconds. The difference in the amount ratio of debris discharged between different water pressures can reach up to 1091%.
The analysis of actual wafer thickness uniformity and surface roughness (Ra) indicates that debris tends to accumulate in the center of the wafer. Increasing the flushing pressure improves surface roughness in this region, but excessively high flushing pressure may lead to wafer damage. | en_US |