| dc.description.abstract | Molybdenum disulfide (MoS?) has demonstrated excellent optoelectronic properties in numerous studies and is considered a promising next-generation semiconductor. However, producing high-quality MoS? multilayer thin films with well-controlled layer numbers remains a significant challenge, which reduces its commercial viability. The two-step growth method can effectively improve yield by physically depositing precursors onto substrates, followed by high-temperature reactions with sulfur gas molecules to obtain continuous MoS? thin films with controllable layer numbers and high quality.
In this study, we utilized a radio-frequency magnetron sputtering system to perform reactive plasma deposition of molybdenum oxide, sputtering the precursor onto silicon oxide substrates, followed by high-temperature conversion into MoS? thin films. By adjusting the sputtering time to control different MoS? layer numbers, we investigated the effects of various process parameters on the growth of MoS? thin films. These parameters include plasma power, pressure, substrate temperature, molybdenum-to-oxygen ratio, and sulfurization temperature. Using Raman spectroscopy to analyze the samples under different conditions, we found that under optimal parameters, electrical measurements yielded an on/off current ratio of 10?, an electron mobility of 0.5?cm2?V?1?s?1, and a photocurrent variation of up to 244% under illumination. | en_US |