| dc.description.abstract | In this study, we proposed a method utilizing hydrogen plasma treatment to enhance the stability, operating speed, and reliability of devices. We performed material analysis on ferroelectric thin films and various components using XPS, TEM, and other techniques, comparing the electrical characteristics of the devices before and after hydrogen plasma treatment, including the ION/IOFF ratio, polarization switching speed, endurance, data retention, and multi-level cell (MLC) operation. Additionally, we combined two FeFETs (1N-1P) to form a FeCAM cell, conducting both electrical and material analysis.Through various analyses, we found that the interface trap density in FeFETs was reduced from 8.04 × 1012 μC/cm2 to 5.5 × 1012 μC/cm2 after hydrogen plasma treatment. This allowed the device′s ION/IOFF ratio to reach eight levels, which is two levels higher than before, with significantly reduced leakage current (1-2 levels lower). XPS also revealed that the oxygen vacancy concentration in the HZO film decreased by nearly 50-60%, improving the charge trapping effect caused by oxygen vacancies. This resulted in wake-up free devices and extended endurance to over 1011 cycles. Furthermore, hydrogen plasma treatment reduced the pinning field, accelerated polarization switching, and minimized imprint effects. It also enhanced MLC operation from TLC to QLC, with a 46% improvement in variability.By inputting parameters such as test pulses, Gmax/Gmin, and the number of states into the MNIST system, recognition accuracy reached 91.1%. Regarding FeCAM, after hydrogen plasma treatment, the standard deviation of VOFF was reduced from 64mV to 38mV, and the maximum Hamming distance (MHD) was six times greater than before. Additionally, the Arrhenius equation fitting results showed that the FeCAM could retain data for ten years at 99.5°C. | en_US |