| dc.description.abstract | In this paper, we designed a Q-Band low-noise ampli er (LNA)
using a 90-nm CMOS process and realized an E-Band LNA using the WIN 100-nm GaAs pHEMT process.
In Chapter 1, we elaborate on the research motivation and background. With the increasing demand for high-data-rate mobile communication systems and the saturation of Lower-Frequency commercial bands, Millimeter-Wave frequencies have become a focal point of recent developments. Q-Band applications include weather radar, fthgeneration mobile communications, and emerging satellite internet services such as Starlink. According to 3GPP speci cations , the FifthGeneration mobile communication frequency range 2 (FR2) bands n260
and n259 are 3740 GHz and 39.543.5 GHz, respectively. Satellite internet downlink uses 37.5-42 GHz, while uplink uses 47.250.2 GHz and
50.451.4 GHz. E-Band applications include Point-to-Point networks
(P2P) at 7176 GHz, 81-86 GHz, and automotive Long-Range radar
(7677 GHz) and Short-Range radar (7781 GHz). As the rst stage
of ampli cation in the receiver chain, the LNA is crucial for communication systems, where the receiver′s sensitivity depends on the overall
noise gure (NF). A lower noise gure indicates better noise immunity
and higher signal sensitivity. According to the Friis′ formula, the noise
of subsequent stages is suppressed by the gain of the preceding stages,
making the LNA′s performance critical for the overall system.
In Chapter 2, we designed a Q-Band LNA with a center frequency of 40 GHz using a 90-nm CMOS process. Traditionally, a transceiver
switch toggles between TX mode and RX mode at the front end. This
switch, located after the PA and before the LNA, can cause signi cant
loss aecting the overall transceiver system. To reduce this loss, we
integrated the switch into the LNA circuit. This approach eliminates
the need for an additional switch, thereby reducing the overall system
loss. At a 40 GHz center frequency, the ampli er measured a gain of
6.46 dB, with return losses greater than 8 dB. The single-ended output
NF at 40 GHz was 5.73 dB, and the IP1dB was approximately −2.5
dBm. The On-O ratio near 32 GHz remained 18 dB, indicating that
our switch design maintained good isolation between on and o states,
meeting the design objectives.
In Chapter 3, we proposed a Q-Band two-stage LNA design using
the WIN 100-nm GaAs pHEMT process, incorporating previous tapeout experiences for optimization. This circuit also targets a 40 GHz
center frequency, employing a two-stage Cascode architecture: the rst
stage is a Cascode, and the second stage is a Common-Source (CS). At
40 GHz, the small-signal gain was measured at 26.5 dB. Noise gure
measurements covered the 3750 GHz range, with an NF of 2.21 dB
at 40 GHz, and the IP1dB reached −18.8 dBm. This circuit achieved
good overall performance in the Q-Band, showing advantages in NF
and gain compared to CMOS and SiGe processes, though with higher
power consumption. Compared to GaN, it exhibited similar NF and
gain performance but with a power consumption advantage.
In Chapter 4, we designed an E-Band two-stage LNA using the
WIN 100-nm GaAs pHEMT process. The circuit features a CS rst stage
and a Cascode second stage. At an operating frequency of 80 GHz, the
ampli er achieved a gain of 21.8 dB. Noise gure measurements covered
the 7590 GHz range, with an NF of 4.5 dB at 80 GHz, and the IP1dB
reached −18 dBm. This circuit demonstrated good performance in the
E-Band, showing a gain advantage compared to other processes, with
satisfactory NF and power consumption performance and no signi cant
shortcomings. There remains considerable potential for optimization;
reducing the stabilizing resistor could potentially enhance performance
further.
Finally, in Chapter 5, we summarize the Q-Band and E-Band LNAs
designed using the 90-nm CMOS and WIN 100-nm GaAs pHEMT processes. The Q-Band LNA using the 90-nm CMOS process showed an
On-O ratio of 18 dB near 32 GHz, indicating good isolation between
on and o states, meeting the design objective of integrating the switch
into the LNA to reduce system loss. The Q-Band LNA using the WIN
100-nm GaAs pHEMT process demonstrated advantages or comparable
performance in NF and gain at 40 GHz compared to other processes.
The E-Band LNA using the WIN 100-nm100-nm GaAs pHEMT process
achieved good overall performance at 80 GHz, with a gain advantage,
satisfactory NF, and power consumption, with no signi cant shortcomings. | en_US |