| dc.description.abstract | Hole is a necessary factor in electrochemical etching. However, the main carrier of N-type semiconductors is electrons, so it is generally difficult for N-type semiconductors to be etched by ordinary electrochemical methods, and additional assistance is needed to generate hole in the electrochemical reaction interface to cause etching. In this study, conductive polymers can protect the components from chemical solution or collision damage when conducting electrochemical experiments on the wafer back, which can be applied to the wafer back grinding process. In addition, the energy gap and void region between semiconductor junctions can be improved to make the hole conductivity faster. The experiment uses double etching slots as the main experimental equipment. The conductive polymer PEDOT/PSS is coated on N-type silicon to form N/PEDOT/P heterogeneous junction structure without adding metal sheet, and then an electric field is applied in a dark room for electrochemical experiments. After the experiment, the auxiliary P-type silicon can be removed directly, and the conductive polymer film on the N-type silicon can be ensured to remain pollution-free. In the experiment, the PN junction with different combinations of N-type silicon and P-type silicon with different doping concentrations will be electrochemical etched. After the etching is completed, ultraviolet irradiation, field emission scanning electron microscope (SEM) and photoluminescence spectrometer (PL) analysis will be carried out, and trend graphs will be drawn to observe the effect through the changes of voltage and current during the experiment. From the analysis of SEM and voltage-current diagram, it can be found that the etching rate of the test piece coated with conductive polymer is faster, the current conduction speed is also more obvious, and the structure is slightly different. In terms of photoluminescence, the brightness is also higher, and the experimental effect is more prominent by increasing the doping concentration of the test piece. | en_US |