| DC 欄位 |
值 |
語言 |
| DC.contributor | 光電科學與工程學系 | zh_TW |
| DC.creator | 黃庭文 | zh_TW |
| DC.creator | Ting-Wen Huang | en_US |
| dc.date.accessioned | 2002-7-10T07:39:07Z | |
| dc.date.available | 2002-7-10T07:39:07Z | |
| dc.date.issued | 2002 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=88226002 | |
| dc.contributor.department | 光電科學與工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文係利用有機金屬氣相沉積技術分別成長氮化鋁鎵/氮化鎵階變與漸變異質接面結構試片，對試片做X-射線繞射，霍爾量測等基本特性量測，與製作蕭特基二極體量測金屬與試片接觸的蕭特基位障及理想因子，最後製作金屬-半導體-金屬光偵測器。量測元件暗電流、照光電流響應及光頻譜響應等特性，並使用光學傳輸矩陣計算光通過元件的反射、穿透及吸收等參數，計算元件量子效率，同時分析其特性差異成因。 | zh_TW |
| dc.description.abstract | The Schottky type metal-semiconductor-metal (MSM) ultraviolet Photodetectors based on GaN/AlGaN heterostructure material systems are reported. The Schottky contacts were made with Au metal. The dark and illuminated current-voltage characteristics were studied. | en_US |
| DC.subject | 蕭特基接觸 | zh_TW |
| DC.subject | 光檢測器 | zh_TW |
| DC.subject | 異質接面 | zh_TW |
| DC.subject | 氮化鋁鎵 | zh_TW |
| DC.subject | 氮化鎵 | zh_TW |
| DC.subject | heterojunction | en_US |
| DC.subject | AlGaN | en_US |
| DC.subject | GaN | en_US |
| DC.subject | Photodetector | en_US |
| DC.title | 氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光檢測器之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | AlGaN/GaN heterojunction metal-semiconductor-metal photodetector | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |