| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 林明儀 | zh_TW |
| DC.creator | Ming-Yi Lin | en_US |
| dc.date.accessioned | 2002-6-27T07:39:07Z | |
| dc.date.available | 2002-6-27T07:39:07Z | |
| dc.date.issued | 2002 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=89521031 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | We utilized the p-type InxGa1-xN/GaN SLs as p-type ohmic contact layer in our laser diode structure. The tunneling barrier width of the metal-semiconductor contact is reduced because of its high hole concentration and low resistivity near the surface, thereby allowing for a high hole tunneling probability through the barrier. By comparison, the effects of the damage during RIE etching were reduced by using the p-type InxGa1-xN/GaN SLs layer as p-type ohmic contact. Then, the electrical characteristic of laser diode was improved. | en_US |
| DC.subject | 氮化鎵 | zh_TW |
| DC.subject | 氮化銦鎵 | zh_TW |
| DC.subject | 氮化鋁銦鎵 | zh_TW |
| DC.subject | 雷射二極體 | zh_TW |
| DC.subject | 歐姆接觸層 | zh_TW |
| DC.subject | GaN | en_US |
| DC.subject | InGaN | en_US |
| DC.subject | AlInGaN | en_US |
| DC.subject | Laser Diode | en_US |
| DC.subject | Ohmic Contact Layer | en_US |
| DC.title | P型氮化銦鎵歐姆接觸層對氮化鋁銦鎵藍紫光雷射二極體特性之影響 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Influence of P-type InGaN Ohmic Contact Layer on GaN-based Blue-violet Laser Diode | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |